MITSUBISHI Pch POWER MOSFET RY A N I FX30ASJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30ASJ-03 OUTLINE DRAWING 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm 1.0 2.3 2.3 10 max 2.3 min 0.9 max 1.0 max 5.5 ± 0.2 4 A 0.5 ± 0.2 2.3 0.8 1 2 3 3 • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ...........50ns 1 2 3 4 1 GATE DRAIN SOURCE DRAIN 2 4 MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS VGSS Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V –30 ±20 V V ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH –30 –120 –30 A A A IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature –30 –120 35 –55 ~ +150 –55 ~ +150 A A W °C °C 0.26 g — Parameter Weight Conditions Typical value Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30ASJ-03 P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Typ. Max. ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V –30 — — — — — — ±0.1 –0.1 V µA mA ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –5A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V –1.3 — — — –1.8 48 96 –0.72 –2.3 61 120 –0.92 V mΩ mΩ V — — — — 11.9 2460 410 170 — — — — S pF pF pF — — — — 20 84 123 60 — — — — ns ns ns ns — –1.0 –1.5 V — — — 50 3.57 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –15V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –15A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = –15A, dis/dt = 50A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) –102 40 30 20 10 0 0 –50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 50 100 150 tw = 10µs –7 –5 –3 –2 100µs –101 1ms –7 –5 –3 –2 10ms DC –100 TC = 25°C Single Pulse –7 –5 –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = –10V –20 –7V –8V –40 –5V –30 –20 –4V PD = 35W Tc = 25°C Pulse Test –10 VGS = –10V –6V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 –6V PD = 35W –8V –16 –5V –4V –12 Tc = 25°C Pulse Test –8 –3V –4 –3V 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30ASJ-03 P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –3.0 ID = –50A –2.0 –30A –1.0 –15A 0 –50 –2 –4 –6 –8 102 –2 –4 –6 –8 7 5 4 3 2 75°C 125°C TC = 25°C 101 7 5 4 3 2 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 Tch = 25°C Ciss Coss Crss 102 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) VDS = –10V Pulse Test –100 –10 103 3 2 –10V 40 2 7 VGS = 0V 5 7 5 80 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 104 f = 1MHZ 3 2 VGS = –4V TRANSFER CHARACTERISTICS (TYPICAL) –10 2 120 DRAIN CURRENT ID (A) –20 0 160 GATE-SOURCE VOLTAGE VGS (V) –30 0 Tc = 25°C Pulse Test 0 –10–1 –2 –3 –5 –7–100 –2 –3 –5–7 –101 –2 –3 –5 –7–102 –10 Tc = 25°C VDS = –10V Pulse Test –40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) –4.0 0 DRAIN CURRENT ID (A) 200 Tc = 25°C Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Tch = 25°C 7 VGS = –10V 5 VDD = –15V 4 RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 4 3 tf tr td(on) 2 3 2 –3 –5–7–100 –2 –3 –5–7 –101 –2 3 –5–7 –102 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) 101 –5 –7 –100 –2 –3 –5 –7–101 –2 –3 –5 DRAIN CURRENT ID (A) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30ASJ-03 P HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) –6 –4 VDS = –10V –20V –25V –2 0 10 20 30 40 –20 –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VGS = –10V ID = 1/2ID Pulse Test 100 7 5 4 3 2 –50 0 50 100 VDS = –10V ID = –1mA –3.2 –2.4 –1.6 –0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 TC = 25°C 75°C 125°C GATE CHARGE Qg (nC) 2 10–1 –30 0 101 7 5 4 3 VGS = 0V Pulse Test –40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –50 Tch = 25°C ID = –30A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 3 2 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999