AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications. AO4604 and AO4604L are electrically identical. -RoHS Compliant -AO4604L is Halogen Free n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 87mΩ (VGS = -4.5V) 100% Rg Tested! SOIC-8 S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range -4.2 30 -20 2 2 1.44 1.44 -55 to 150 -55 to 150 Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 Units V V 5.8 PD Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC ±20 -5 ID IDM TJ, TSTG Max p-channel -30 6.9 TA=25°C TA=70°C p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 30 DS VGS Gate-Source Voltage ±20 B S1 S2 Bottom View Continuous Drain Current A G1 G2 SOIC-8 Top View D1 D2 A W Max 62.5 110 40 °C Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 40 °C/W AO4604 N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, V GS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance Forward Transconductance VDS=5V, ID=6.9A VSD Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Rg Gate resistance Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 10 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, V DS=15V, ID=6.9A Units V 1.9 3 µA nA V A 22.5 28 31.3 38 34.5 42 15.4 0.76 680 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) 1 100 TJ=125°C gFS Output Capacitance 0.004 5 VGS=4.5V, ID=5.0A Crss Max TJ=55°C VGS=10V, ID=6.9A Coss Typ mΩ mΩ S 1 V 3 A 820 pF 102 pF 77 pF 1.2 2 Ω 13.84 17 nC 6.74 8.1 nC 1.82 nC 3.2 nC 4.6 ns VGS=10V, V DS=15V, R L=2.2Ω, RGEN=3Ω 4.1 ns 20.6 ns Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 16.5 Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 5.2 ns 20 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4: Jan 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4604 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 25 6V 5V 4.5V VDS=5V 16 4V 12 ID(A) ID (A) 20 15 3.5V 8 10 125°C VGS=3V 5 4 25°C 0 0 1 2 3 4 0 5 0 VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 1.6 Normalized On-Resistance 50 RDS(ON) (mΩ ) 1 VGS (Volts) Figure 2: Transfer Characteristics 60 VGS=4.5V 40 30 VGS=10V 20 1.5 VGS=10V ID=5A 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 1.0E+00 IS Amps ID=5A 60 RDS(ON) (mΩ ) 0.5 50 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 25°C 1.0E-04 30 25°C 1.0E-05 20 0.0 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4604 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 25 30 TJ(Max)=150°C TA=25°C 10µs Power W ID (Amps) 20 40 10ms 0.1s 1 15 30 100µs 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4604 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s RL Vds Vds DUT Vgs + VDC 90% V dd - Rg V gs 10% Vgs t d (o n ) tr t d (o ff) ton tf t o ff D io d e R e c o v e ry T e st C irc u it & W a ve fo rm s Q rr = - Vds + Id t DUT Vgs Vds - Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + VD C - IF t rr d I/d t I RM Vdd Vdd Vds AO4604 P-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current -5 TJ=125°C VGS=-4.5V, I D=-4A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg (4.5V) Total Gate Charge (4.5V) Gate Source Charge Qgd tD(on) 6 -1.8 ±100 nA -3 V 39 52 54 70 67 87 mΩ -1 V -2.8 A 900 pF VGS=-10V, VDS=-15V, ID=-5A mΩ 8.6 -0.77 S 120 pF 75 VGS=0V, VDS=0V, f=1MHz µA A 700 VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qgs Units V TJ=55°C VGS=-10V, ID=-5A Output Capacitance Max -1 VDS=-24V, VGS=0V IDSS Coss Typ pF 10 15 Ω 14.7 19 nC 7.6 10 nC 2 nC Gate Drain Charge 3.8 nC Turn-On DelayTime 8.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 5 ns 29 ns 14 trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 23.5 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13.4 ns 30 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4: Jan 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4604 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -6V -5V -4.5V VDS=-5V 8 15 -ID(A) -ID (A) -4V 10 -3.5V 6 4 125°C VGS=-3V 5 2 25°C -2.5V 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 100 1.60E+00 Normalized On-Resistance VGS=-4.5V RDS(ON) (mΩ ) 80 VGS=-4.5V 60 VGS=-10V 40 1.40E+00 VGS=-10V 1.20E+00 ID=-5A 1.00E+00 20 1 3 5 7 8.00E-01 9 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1E+01 140 1E+00 ID=-5A 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ ) 25 125°C 80 125°C 1E-03 25°C 1E-04 60 25°C 40 1E-05 1E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4604 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-5A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 800 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 14 16 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 100 10 15 TJ(Max)=150°C TA=25°C 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 30 100µs Power (W) -ID (Amps) 25 40 10µs 10 20 -VDS (Volts) Figure 8: Capacitance Characteristics 1ms 0.1s 10ms 1 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4604 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgs Vds + VDC Qgd + DUT Vgs Ig Charge R e sistive S w itch in g T e st C ircuit & W a ve fo rm s RL V ds t o ff t on V gs - DUT V gs V DC td(on ) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iod e R ecove ry T est C ircu it & W ave form s Q rr = - V ds + DUT V ds - Isd Idt V gs L V gs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr d I/d t -I R M Vdd VD C - -I F -V ds