SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD245/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO PARAMETER Collector-base voltage Collector-emitter voltage CONDITIONS BD246 -55 BD246A -70 BD246B -90 BD246C -115 BD246 -45 BD246A BD246B Open base BD246C VEBO VALUE Emitter-base voltage -60 -80 UNIT V V -100 Open collector -5 V IC Collector current -10 A ICM Collector current-peak -15 A IB Base current -3 A PC Collector power dissipation 80 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD246 VCEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -45 BD246A -60 IC=30mA ;IB=0 V BD246B -80 BD246C -100 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-2.5A -4.0 V VBE-1 Base-emitter on voltage IC=-3A ; VCE=-4V -1.6 V VBE-2 Base-emitter on voltage IC=-10A ; VCE=-4V -3.0 V ICEO Collector cut-off current -0.7 mA -1 mA BD246/246A VCE=-30V; IB=0 BD246B/246C VCE=-60V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-3A ; VCE=-4V 20 hFE-3 DC current gain IC=-10A ; VCE=-4V 4 Switching times ton Turn-on time toff Turn-off time IC=-1A; IB1=-IB2=-0.1A RL=20> 2 0.2 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 BD246/A/B/C