APTM20HM16FT Full - Bridge MOSFET Power Module Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies VBUS Q1 Q3 G3 G1 S1 OUT1 S3 OUT2 Q2 Q4 G2 G4 S2 S4 NTC1 NTC2 0/VBU S G3 G4 S3 S4 VBUS 0/VBUS VDSS = 200V RDSon = 16mW max @ Tj = 25°C ID = 104A @ Tc = 25°C OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 104 77 416 ±30 16 390 100 50 3000 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20HM16FT – Rev 1 Symbol VDSS APTM20HM16FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 250µA Min 200 Typ Tj = 25°C Tj = 125°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 3 Max Unit V 250 1000 16 5 ±100 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID =104A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v pF nC 53 67 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A RG = 5Ω Rise Time Typ 7220 2330 146 140 64 ns 88 116 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω 849 µJ 929 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω 936 µJ 986 Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tj = 25°C Max 104 77 1.3 5 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 104A IS = - 104A VR = 133V diS/dt = 100A/µs IS = - 104A VR = 133V diS/dt = 100A/µs Tj = 25°C 0.9 Tj = 125°C 3.4 Unit A V V/ns ns µC May, 2004 trr Test Conditions u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 104A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM20HM16FT – Rev 1 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w APTM20HM16FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink Typ Max 0.32 150 125 100 4.7 160 M5 Unit °C/W V °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë APT website – http://www.advancedpower.com 3–6 APTM20HM16FT – Rev 1 May, 2004 Package outline APTM20HM16FT Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 300 10V 250 9V 200 8.5V 150 8V 7.5V 100 7V 50 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 100 TJ=25°C 50 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to VGS=10V @ 52A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 100 80 60 40 20 0 0 25 50 75 100 ID, Drain Current (A) 125 150 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com May, 2004 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 4–6 APTM20HM16FT – Rev 1 ID, Drain Current (A) Transfert Characteristics 300 ID, Drain Current (A) 350 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 52A 2.0 1.5 1.0 0.5 0.0 -50 -25 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100 100µs 1ms 10 10ms Single pulse TJ=150°C 100ms 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) May, 2004 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5–6 APTM20HM16FT – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20HM16FT APTM20HM16FT Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=5Ω TJ=125°C L=100µH 60 40 tr and tf (ns) td(on) and td(off) (ns) 120 td(off) 80 td(on) 100 80 tr 60 20 0 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) 0 3 VDS=133V RG=5Ω TJ=125°C L=100µH Eoff Switching Energy (mJ) 1.5 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2 Eon 1 0.5 0 VDS=133V ID=104A TJ=125°C L=100µH 2.5 Eoff 2 1.5 Eon 1 0.5 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current VDS=133V D=50% RG=5Ω TJ=125°C 250 200 150 100 50 0 25 38 50 63 75 100 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) May, 2004 ID, Drain Current (A) 88 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) VDS=133V RG=5Ω TJ=125°C L=100µH 140 100 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20HM16FT – Rev 1 APT reserves the right to change, without notice, the specifications and information contained herein