ADPOW APTM20HM16FT Full - bridge mosfet power module Datasheet

APTM20HM16FT
Full - Bridge
MOSFET Power Module
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
VBUS
Q1
Q3
G3
G1
S1
OUT1
S3
OUT2
Q2
Q4
G2
G4
S2
S4
NTC1
NTC2
0/VBU S
G3
G4
S3
S4
VBUS
0/VBUS
VDSS = 200V
RDSon = 16mW max @ Tj = 25°C
ID = 104A @ Tc = 25°C
OUT2
OUT1
S1
S2
NTC2
G1
G2
NTC1
Features
· Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
104
77
416
±30
16
390
100
50
3000
Unit
V
A
V
mW
W
A
May, 2004
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20HM16FT – Rev 1
Symbol
VDSS
APTM20HM16FT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 250µA
Min
200
Typ
Tj = 25°C
Tj = 125°C
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 52A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
3
Max
Unit
V
250
1000
16
5
±100
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 100V
ID =104A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
pF
nC
53
67
32
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
RG = 5Ω
Rise Time
Typ
7220
2330
146
140
64
ns
88
116
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
849
µJ
929
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
936
µJ
986
Source - Drain diode ratings and characteristics
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Typ
Tj = 25°C
Max
104
77
1.3
5
230
Tj = 125°C
450
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 104A
IS = - 104A
VR = 133V
diS/dt = 100A/µs
IS = - 104A
VR = 133V
diS/dt = 100A/µs
Tj = 25°C
0.9
Tj = 125°C
3.4
Unit
A
V
V/ns
ns
µC
May, 2004
trr
Test Conditions
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR £ VDSS Tj £ 150°C
IS £ - 104A di/dt £ 700A/µs
APT website – http://www.advancedpower.com
2–6
APTM20HM16FT – Rev 1
Symbol Characteristic
Continuous Source current
IS
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery w
APTM20HM16FT
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
Typ
Max
0.32
150
125
100
4.7
160
M5
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R 25
é
æ 1
1 öù T: Thermistor temperature
- ÷÷ú RT: Thermistor value at T
exp ê B25 / 85 çç
è T25 T øû
ë
APT website – http://www.advancedpower.com
3–6
APTM20HM16FT – Rev 1
May, 2004
Package outline
APTM20HM16FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.9
0.3
0.25
0.7
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VGS=15V
300
10V
250
9V
200
8.5V
150
8V
7.5V
100
7V
50
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
250
200
150
100
TJ=25°C
50
TJ=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
1.2
Normalized to
VGS=10V @ 52A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.9
0.8
100
80
60
40
20
0
0
25
50
75
100
ID, Drain Current (A)
125
150
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
May, 2004
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
4–6
APTM20HM16FT – Rev 1
ID, Drain Current (A)
Transfert Characteristics
300
ID, Drain Current (A)
350
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 52A
2.0
1.5
1.0
0.5
0.0
-50 -25
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
limited by
RDSon
100
100µs
1ms
10
10ms
Single pulse
TJ=150°C
100ms
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=104A
VDS=40V
12
TJ=25°C
VDS=100V
10
8
VDS=160V
6
4
2
0
0
20
40
60
80 100 120 140 160
Gate Charge (nC)
May, 2004
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
APT website – http://www.advancedpower.com
5–6
APTM20HM16FT – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20HM16FT
APTM20HM16FT
Delay Times vs Current
Rise and Fall times vs Current
160
120
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
60
40
tr and tf (ns)
td(on) and td(off) (ns)
120
td(off)
80
td(on)
100
80
tr
60
20
0
0
0
25
50 75 100 125 150 175
ID, Drain Current (A)
0
3
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Switching Energy (mJ)
1.5
25
50 75 100 125 150 175
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
Eon
1
0.5
0
VDS=133V
ID=104A
TJ=125°C
L=100µH
2.5
Eoff
2
1.5
Eon
1
0.5
0
25
50
75
100 125 150 175
0
5 10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=5Ω
TJ=125°C
250
200
150
100
50
0
25
38
50
63
75
100
1000
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
May, 2004
ID, Drain Current (A)
88
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
300
Frequency (kHz)
tf
40
20
Eon and Eoff (mJ)
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
140
100
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM20HM16FT – Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein
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