CYSTEKEC DTC115EC3 Npn digital transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C356C3
Issued Date : 2011.11.03
Revised Date : 2014.03.04
Page No. : 1/6
NPN Digital Transistors (Built-in Resistors)
DTC115EC3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTA115EC3
• Pb-free package
Equivalent Circuit
Outline
DTC115EC3
SOT-523
R1=100kΩ , R2=100 kΩ
IN(B) : Base
OUT(C) : Collector
GND(E) : Emitter
Ordering Information
Device
DTC115EC3-0-T1-G
Package
SOT-523
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTC115EC3
CYStek Product Specification
Spec. No. : C356C3
Issued Date : 2011.11.03
Revised Date : 2014.03.04
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Input Voltage
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Limits
50
-10~+40
20
100
150
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Characteristics (Ta=25℃)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
82
70
0.8
-
Typ.
0.1
100
1
250
Max.
0.5
0.3
0.15
0.5
130
1.2
-
Unit
V
V
V
mA
μA
kΩ
MHz
Test Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=1mA
IO/II=5mA/0.25mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IC=5mA, f=100MHz*
* Transition frequency of the device
DTC115EC3
CYStek Product Specification
Spec. No. : C356C3
Issued Date : 2011.11.03
Revised Date : 2014.03.04
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Output Current
Output Voltage vs Output Current
1000
1
Output Voltage---VO(ON) (V)
Current Gain---GI
Vo = 5V
100
Io / Ii = 20
0.1
0.01
10
0.1
1
10
0.1
100
1
Output Current---IO(mA)
10
100
Output Current---Io(mA)
Output Current vs Input Voltage(OFF characteristics)
Input Voltage vs Output Current(ON characteristics)
10
100
Vcc = 5V
Output Current---I o(mA)
Input Voltage---VI(ON)(V)
Vo = 0.3V
10
1
0.1
1
0.1
0.01
0.001
0.1
1
10
Output Current---Io(mA)
100
0
1
2
3
4
5
Input Voltage---VI(OFF)(V)
Power Derating Curve
Power Dissipation---PD(mW)
160
140
120
100
80
60
40
20
0
0
DTC115EC3
50
100
150
Ambient Temperature --- Ta(℃ )
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C356C3
Issued Date : 2011.11.03
Revised Date : 2014.03.04
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
DTC115EC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C356C3
Issued Date : 2011.11.03
Revised Date : 2014.03.04
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC115EC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C356C3
Issued Date : 2011.11.03
Revised Date : 2014.03.04
Page No. : 6/6
SOT-523 Dimension
Marking:
29
Device
Code
XX
Date
Code
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
Style: Pin 1.Base
(Input)
2.Emitter (Ground)
3.Collector (Output)
*: Typical
Inches
Min.
Max.
0.028
0.035
0.000
0.004
0.028
0.031
0.006
0.010
0.010
0.014
0.004
0.008
0.059
0.067
DIM
A
A1
A2
b1
b2
c
D
Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
DIM
E
E1
e
e1
L
L1
θ
Inches
Min.
Max.
0.028
0.035
0.057
0.069
0.020*
0.035
0.043
0.016 REF
0.010
0.018
0°
8°
Millimeters
Min.
Max.
0.700
0.900
1.450
1.750
0.500*
0.900
1.100
0.400 REF
0.260
0.460
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC115EC3
CYStek Product Specification
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