ON MC14572UBF Hex gate Datasheet

MC14572UB
Hex Gate
The MC14572UB hex functional gate is constructed with MOS
P–channel and N–channel enhancement mode devices in a single
monolithic structure. These complementary MOS logic gates find
primary use where low power dissipation and/or high noise immunity
is desired. The chip contains four inverters, one NOR gate and one
NAND gate.
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•
•
•
•
•
•
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Diode Protection on All Inputs
Single Supply Operation
Supply Voltage Range = 3.0 Vdc to 18 Vdc
NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter
NAND Input Pin Adjacent to VDD Pin to Simplify Use As An
Inverter
NOR Output Pin Adjacent to Inverter Input Pin For OR Application
NAND Output Pin Adjacent to Inverter Input Pin For AND
Application
Capable of Driving Two Low–power TTL Loads or One Low–Power
Schottky TTL Load over the Rated Temperature Range
MARKING
DIAGRAMS
16
PDIP–16
P SUFFIX
CASE 648
MC14572UBCP
AWLYYWW
1
16
SOIC–16
D SUFFIX
CASE 751B
14572U
AWLYWW
1
16
SOEIAJ–16
F SUFFIX
CASE 966
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Parameter
1
Value
Unit
– 0.5 to +18.0
V
– 0.5 to VDD + 0.5
V
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation,
per Package (Note 3.)
500
mW
TA
Ambient Temperature Range
– 55 to +125
°C
Tstg
Storage Temperature Range
– 65 to +150
TL
Lead Temperature
(8–Second Soldering)
260
Symbol
VDD
Vin, Vout
Iin, Iout
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
Package
Shipping
MC14572UBCP
PDIP–16
2000/Box
°C
MC14572UBD
SOIC–16
48/Rail
°C
MC14572UBDR2
SOIC–16
2500/Tape & Reel
MC14572UBF
SOEIAJ–16
See Note 1.
MC14572UBFEL
SOEIAJ–16
See Note 1.
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS
(Vin or Vout)
VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
Device
1. For ordering information on the EIAJ version of
the SOIC packages, please contact your local
ON Semiconductor representative.
v
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 3
A
= Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
ORDERING INFORMATION
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
v
MC14572UB
AWLYWW
1
Publication Order Number:
MC14572UB/D
MC14572UB
PIN ASSIGNMENT
OUTA
1
16
VDD
INA
2
15
IN 2F
OUTB
3
14
IN 1F
INB
4
13
OUTF
OUTC
5
12
INE
IN 1C
6
11
OUTE
IN 2C
7
10
IND
VSS
8
9
OUTD
LOGIC DIAGRAM
2
1
4
3
6
5
7
10
9
12
11
14
13
15
VDD = PIN 16
VSS = PIN 8
CIRCUIT SCHEMATIC
VDD
VDD
VDD
7
1
2
13
6
5
VSS
14
15
VSS
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2
VSS
MC14572UB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
– 55_C
VDD
Characteristic
25_C
125_C
Symbol
Vdc
Min
Max
Min
Typ (4.)
Max
Min
Max
Unit
Output Voltage
Vin = VDD or 0
“0” Level
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
Vin = 0 or VDD
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
Input Voltage
“0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
1.0
2.0
2.5
“1” Level
VIH
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4.0
8.0
12.5
—
—
—
5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
– 0.7
– 0.14
– 0.35
– 1.1
—
—
—
—
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mAdc
Input Current
Iin
15
—
± 0.1
—
± 0.00001
± 0.1
—
± 1.0
µAdc
Input Capacitance
(Vin = 0)
Cin
—
—
—
—
5.0
7.5
—
—
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
7.5
15
30
µAdc
IT
5.0
10
15
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Vdc
Vdc
IOH
Source
Sink
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
mAdc
IT = (1.89 µA/kHz) f + IDD
IT = (3.80 µA/kHz) f + IDD
IT = (5.68 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. The formulas given are for the typical characteristics only at 25_C.
6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.006.
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3
µAdc
MC14572UB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
Propagation Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 5 ns
tPLH, tPHL = (0.66 ns/pF) CL + 17 ns
tPLH, tPHL = (0.5 ns/pF) CL + 15 ns
tPLH,
tPHL
VDD
Min
Typ (8.)
Max
5.0
10
15
—
—
—
180
90
65
360
180
130
5.0
10
15
—
—
—
100
50
40
200
100
80
5.0
10
15
—
—
—
90
50
40
180
100
80
Unit
ns
ns
ns
7. The formulas given are for the typical characteristics only at 25_C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
VDD
PULSE
GENERATOR
VDD
INPUT
7
16
INPUT
2
PULSE
GENERATOR
OUTPUT
16
6
OUTPUT
1
8
VSS
5
CL
8
VSS
CL
VDD
20 ns
16
PULSE
GENERATOR
INPUT
15
INPUT
14
OUTPUT
VSS
90%
50%
10%
tPHL
13
8
90%
50%
10%
CL
OUTPUT
90%
50%
10%
90%
50%
10%
Figure 1. Switching Time Test Circuits and Waveforms
4
VSS
tPLH
tf
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20 ns
VDD
tr
VOH
VOL
MC14572UB
PACKAGE DIMENSIONS
PDIP–16
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
–A–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
C
L
S
–T–
SEATING
PLANE
K
H
G
D
M
J
16 PL
0.25 (0.010)
M
T A
M
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5
DIM
A
B
C
D
F
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.740
0.770
0.250
0.270
0.145
0.175
0.015
0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008
0.015
0.110
0.130
0.295
0.305
0_
10 _
0.020
0.040
MILLIMETERS
MIN
MAX
18.80
19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
MC14572UB
PACKAGE DIMENSIONS
SOIC–16
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A–
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B–
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
–T–
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
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6
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC14572UB
PACKAGE DIMENSIONS
SOEIAJ–16
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 966–01
ISSUE O
16
LE
9
Q1
M_
E HE
1
L
8
DETAIL P
Z
D
e
VIEW P
A
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
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7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
–––
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
–––
0.78
INCHES
MIN
MAX
–––
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
–––
0.031
MC14572UB
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MC14572UB/D