OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate change simpler drive circuitry. MAXIMUM RATINGS (Per Device) PART NO. OM60N10SC OM55N10SC OM55N10SA OM75N06SC OM75N06SA OM75N05SC OM75N05SA VDS (V) 100 100 100 60 60 50 50 RDS(on) ( ) .025 .030 .035 .016 .018 .016 .018 ID (A) 60 55 55 75 75 75 75 Package TO-258AA TO-258AA TO-254AA TO-258AA TO-254AA TO-258AA TO-254AA 3.1 PIN CONNECTION SCHEMATIC TO-254AA TO-258AA Drain Gate 1 Pin 1: Pin 2: Pin 3: Source 4 11 R1 Supersedes 2 07 R0 3.1 - 47 2 3 Drain Source Gate 1 Pin 1: Pin 2: Pin 3: 2 3 Drain Source Gate OM55N10SA - OM75N06SC ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter 60N10SC 55N10SA 55N10SC 75N06SA 75N06SC 75N05SA 75N05SC Units VDS Drain-Source Voltage 100 100 60 50 V VDGR Drain-Gate Voltage (RGS = 1 M ) 100 100 60 50 V 60 55 75 75 A Continuous Drain Current2 ID @ TC = 100°C Continuous Drain Current2 37 33 45 45 A IDM Pulsed Drain Current1 180 180 225 225 A PD @ TC = 25°C Maximum Power Dissipation 130 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 55 50 50 50 W 1.00 1.00 1.00 1.00 W/°C -55 to 150 -55 to 150 300 300 ID @ TC = 25°C Junction-To-Case Linear Derating Factor TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/16" from case for 10 secs.) -55 to 150 -55 to 150 300 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%. 2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C THERMAL RESISTANCE RthJC Junction-to-Case 1.0 °C/W PACKAGE LIMITATIONS Parameters ID TO254AA TO-258AA Unit 25 35 A .020 .025 W/°C 50 40 °C/W Continuous Drain Current Linear Derating Factor, Junction-to-Ambient RthJA Thermal Resistance, Junction-to-Ambient (Free Air Operation) MECHANICAL OUTLINE 3.1 .270 .240 .695 .685 .165 .155 .545 .535 .144 DIA. .050 .040 .045 .035 .685 .665 .835 .815 .707 .697 .800 .790 .550 .530 .550 .530 .092 MAX. .750 .500 .550 .510 .005 .065 .055 .200 TYP. .005 .045 .035 .140 TYP. .150 TYP. .150 TYP. TO-258AA .260 .249 TO-254AA PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information. 3.1 - 48 °C OM60N10SC Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 49 Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 60 A (repetitive or non-repetitive,TJ = 25°C) 720 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tj max, d< 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 2 ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.025 0.05 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz 25 4000 1100 250 90 270 270 nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V 120 200 210 410 nS nS nS 60 240 1.6 180 A A V nS 1.8 10 µC A VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V ISD = 60 A, VGS = 0 ISD = 60 A, di/dt = 100 A/µs VR = 80 V Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 55 A (repetitive or non-repetitive,TJ = 25°C) 600 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tj max, d< 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 2 Reverse Recovery Charge Reverse Recovery Current V ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.03 0.06 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz 55 25 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. (TC = 25°C unless otherwise specified) 4000 1100 250 90 270 270 nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V 120 200 210 410 nS nS nS 55 220 1.5 180 A A V nS 1.8 11 µC A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V ISD = 55 A, VGS = 0 ISD = 55 A, di/dt = 100 A/µs VR = 80 V 3.1 OM55N10SA - OM75N06SC Reverse Recovery Charge Reverse Recovery Current V 60 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM OM55N10SC (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 50 Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 55 A (repetitive or non-repetitive,TJ = 25°C) 600 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tj max, d< 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 2 Reverse Recovery Charge Reverse Recovery Current V ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.035 0.070 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz 55 25 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM OM75N06SC (TC = 25°C unless otherwise specified) 4000 1100 250 90 270 270 nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V 120 200 210 410 nS nS nS 55 180 1.5 180 A A V nS 1.8 11 µC A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V ISD = 55 A, VGS = 0 ISD = 55 A, di/dt = 100 A/µs VR = 80 V (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d< 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 60 2 Reverse Recovery Charge Reverse Recovery Current ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.016 0.032 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 75 25 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM V 4100 1800 420 190 900 150 nS VDD = 25 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 25 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 25 V, ID = 40 A, VGS = 10 V 130 360 280 600 nS nS nS 75 300 1.5 120 A A V nS 0.45 6.5 µC A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. VDD = 40 V, ID = 75 A RG = 50 , VGS = 10 V ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 25 V OM55N10SA - OM75N06SC 3.1 OM55N10SA OM75N06SA EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 51 Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d< 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 60 2 ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.018 0.036 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 25 4100 1800 420 190 900 150 nS VDD = 25 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 25 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 25 V, ID = 40 A, VGS = 10 V 130 360 280 600 nS nS nS 75 300 1.5 120 A A V nS 0.45 6.5 µC A VDD = 40 V, ID = 75 A RG = 50 , VGS = 10 V ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 25 V EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d< 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 50 2 Reverse Recovery Charge Reverse Recovery Current V ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.016 0.032 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 75 25 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR 4100 1800 420 190 900 150 nS VDD = 20 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 20 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 20 V, ID = 40 A, VGS = 10 V 130 360 280 600 nS nS nS 75 300 1.5 120 A A V nS 0.45 6.5 µC A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. VDD = 35 V, ID = 75 A RG = 50 , VGS = 10 V ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 20 V 3.1 OM55N10SA - OM75N06SC Reverse Recovery Charge Reverse Recovery Current V 75 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM OM75N05SC (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 52 Electrical Charactreristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Charactreristics - ON Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Charactreristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Charactreristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope 50 2 Reverse Recovery Charge Reverse Recovery Current V ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.018 0.036 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 75 25 Total Gate Charge Qg Electrical Charactreristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Charactreristics - Source Drain Diode Source Drain Current ISD ISDM(*) Source Drain Current (pulsed) Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM SWITCHING TIMES TEST CIRCUITS FOR RESISTIVE LOAD Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d< 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 4100 1800 420 190 900 150 nS VDD = 20 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 20 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 20 V, ID = 40 A, VGS = 10 V 130 360 280 600 nS nS nS 75 300 1.5 120 A A V nS 0.45 6.5 µC A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. VDD = 35 V, ID = 75 A RG = 50 , VGS = 10 V 2200 µF RL VDD VD VDS RS D.U.T. FW TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING AND DIODE REVERSE RECOVERY TIME A A A D MOS Diode G S L = 100µH FAST Diode – B B 3.3 µF B D 25 G + ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 20 V 3.3 µF – RC D.U.T. S 85 1000 µF VDS OM55N10SA - OM75N06SC 3.1 OM75N05SA OM55N10SA - OM75N06SC OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA Transconductance Static Drain-Source On Resistance RDS(on) gfs(S) TJ = 40°C 50 0.030 TJ = 25°C 40 VGS = 10V 0.025 TJ = 125°C 30 0.020 VDS > ID(on) x RDS(on)max 20 0.015 10 0 0 20 40 60 80 100 0.010 ID(A) 0 40 60 80 ID(A) Capacitance Variations Gate Charge vs Gate-Source Voltage VGS (V) C(nF) 10 5 8 4 6 3 Cies VDS = 0 f = 1MHz VDS = 80V 4 20 2 ID = 30A 2 1 0 Coes Cres 0 0 20 40 60 80 100 Qg(nC) 0 20 40 60 80 100 VDS(V 3.1 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature VGS(th) (norm) RDS(on) (norm) VDS = VGS ID = 250µA 1.5 1.2 1.0 1.0 0.8 0.5 VDS = 10V ID = 30A 0.6 -50 0 50 100 0 TJ (°C) 3.1 - 53 -50 0 50 100 TJ (°C) OM55N10SA - OM75N06SC OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA Transconductance Static Drain-Source On Resistance gfs(S) RDS(on) VDS > ID(on) x RDS(on)max 80 14 TJ = -40°C 60 12 VGS = 10V TJ = 25°C TJ = 125°C 40 10 20 0 8 0 20 40 60 80 ID(A) 6 0 20 40 60 80 ID(A) Capacitance Variations Gate Charge vs Gate-Source Voltage C(nF) VGS(V) VDS = 25V ID = 40A 12 VDS = 0 f = 1MHz 8 6 8 Cies 4 4 Coes 2 Cres 0 0 0 40 80 120 Qg(nC) 0 10 20 30 40 VDS(V) 3.1 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature RDS(on) (norm) VGS(th) (norm) VDS = VGS ID = 250µA 1.2 1.5 1.0 1.0 0.8 0.5 VGS = 10V 0.6 ID = 40A 0.4 0 -50 0 50 100 TJ(°C) -50 0 50 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 100 TJ (°C)