Fairchild FJX4004R Switching application Datasheet

FJX4004R
FJX4004R
Switching Application (Bias Resistor Built In)
3
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47KΩ, R2=47KΩ)
• Complement to FJX3004R
2
1
SOT-323
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
Marking
R1
S54
B
R2
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
-50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-10
IC
V
Collector Current
-100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE=0
Min.
-50
BVCEO
Collector-Emitter Breakdown Voltage
IC= -100µA, IB=0
-50
ICBO
Collector Cut-off Current
VCB= -40V, IE=0
hFE
DC Current Gain
VCE= -5V, IC= -5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
VCE= -10V, IC=-5mA
VCB= -10V, IE=0
f=1.0MHz
Max.
Units
V
-0.1
µA
V
68
-0.3
VI(off)
Input Off Voltage
VCE= -5V, IC= -100µA
VI(on)
Input On Voltage
VCE= -0.3V, IC= -2mA
R1
Input Resistor
32
R1/R2
Resistor Ratio
0.9
©2002 Fairchild Semiconductor Corporation
Typ.
V
200
MHz
5.5
pF
-0.5
V
-3
V
47
62
KΩ
1
1.1
Rev. A2, August 2002
FJX4004R
Typical Characteristics
-100
1000
VCE = - 0.3V
R1 = 47 K
VCE = - 5V
R1 = 47 K
R2 = 47 K
VI(on)[V], INPUT VOLTAGE
hFE , DC CURRENT GAIN
R2 = 47 K
100
-10
-100
-1
-0.1
-0.1
10
-1
-10
-1000
-1
IC[mA], COLLECTOR CURRENT
280
VCE = - 5V
R1 = 47 K
R2 = 47 K
240
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
Figure 2. Input On Voltage
-100
-10
-0.0
-100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-1000
-10
200
160
120
80
40
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
0
25
50
75
100
125
150
175
o
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
©2002 Fairchild Semiconductor Corporation
Ta[ C], AMBIENT TEMPERATURE
Figure 4. Power Derating
Rev. A2, August 2002
FJX4004R
Package Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90
±0.10
+0.05
0.05 –0.02
1.00±0.10
1.30±0.10
0.275±0.100
3°
+0.04
0.135 –0.01
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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