BAS19W FM120-M+ BAS20WTHRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process SWITCHING DIODEdesign, excellent power dissipation offers better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to z Fast optimize Switching Speed board space. power loss, high efficiency. • Low Mount z Surface Package Ideally Suited for Automatic Insertion • High current capability, low forward voltage drop. z For•General Purpose Switching Applications High surge capability. for overvoltage protection. • Guardring z High Conductance high-speed • Ultrapackage Pb-Free isswitching. available z Silicon epitaxial planar chip, metal silicon junction. • RoHS product for packing code suffix ”G” • Lead-free parts meet environmental standards of z Pb Free Product SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 Halogen free product for packing code suffix “H” MIL-STD-19500 /228 product for packing code • RoHS Sensitivity Moisture Level 1 suffix "G" 3 Halogen free product for packing code suffix "H" 2 Mechanical data 0.040(1.0) 0.024(0.6) Marking: BAS19W : UL94-V0KA8 rated flame retardant • Epoxy BAS21W KT3 : Molded plastic, • Case BAS20W KT2 SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Ratings @Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Parameter Indicated by cathode band • Mounting Position : Any Peak Repetitive Reverse Voltage • Weight : Approximated 0.011 gram Symbol VRRM DC Blocking Voltage VR Average Rectified Output Current IO BAS19W BAS20W BAS21W Dimensions in inches and (millimeters) 100 150 V 250 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Pd Power Dissipation Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by RθJA Thermal Resistance. Junction to20% Ambient 200 mA 200 mW Marking Code Storage Temperature Range TSTG12 20 13 30 14 40 VRMS 14 21 VDC 20 30 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage Maximum DC Blocking Voltage 15 50 16 60 18 80 10 100 115 ℃ 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) IFSM Symbol Reverse breakdown Typical Thermal Resistancevoltage (Note 2) BAS19W RΘJA Typical Junction Capacitance (Note 1) BAS20WCJ TJ Operating Temperature Range V(BR) BAS21W Storage Temperature Range Reverse voltage leakage current Maximum Forward Voltage at 1.0A DC BAS19W BAS20WVF @T A=125℃ voltage 100 40 120 150 IR= 100µA -55 to +125 250 Max Unit Am ℃/ -55 to +150 P V ℃ ℃ VR=100V IR VR=150V 0.50 VR=200V IR 0.70 0.1 0.85 µA 0.9 0.92 0.5 VF CD Reveres recovery time trr IF=100mA IF=200mA VR=0V, f=1MHz IF=IR=30mA,Irr=0.1×IR Vo mA 10 Diode capacitance 2- Thermal Resistance From Junction to Ambient Min 30 Am SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-1 conditions 1.0 - 65 to +175 Maximum Average Reverse Current at @T A=25℃ BAS21W 2012-06 Test TSTG CHARACTERISTICS Forward NOTES: ℃/W 625 FM130-MH FM140-MH FM150-MH SYMBOL T FM120-MH FM1200-MH UN ℃ 150FM160-MH FM180-MH FM1100-MH FM1150-MH J RATINGS Junction Temperature Rated DC Blocking Voltage Unit 1 1.25 5 50 V pF ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAS19W FM120-M+ BAS20W THRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to • Low power loss, high efficiency. Typical Characteristics • High current capability, low forward voltage drop. Forward Characteristics •200High surge capability. 1000 •100Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 100 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Reverse Characteristics 0.071(1.8) 0.056(1.4) Ta=100℃ (nA) T= a 2 5℃ Halogen free product for packing code suffix "H" Mechanical data 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , •0.1Terminals :Plated terminals, solderable per MIL-STD-750 REVERSE CURRENT IR MIL-STD-19500 /228 10 • RoHS product for packing code suffix "G" T= a 1 00 ℃ FORWARD CURRENT IF (mA) optimize board space. 10 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Ta=25℃ 1 Method 2026 • Polarity : Indicated by cathode band 0.01 • Mounting Position : Any 0.0 0.2 0.4 0.6 0.8 • Weight : Approximated gram FORWARD 0.011 VOLTAGE V (V) Dimensions in inches and (millimeters) 1.0 0.1 0.1 1.2 1 10 REVERSE VOLTAGE F VR 100 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load,Capacitance derate current by 20% Characteristics Per Diode 5 RATINGS a Marking Code 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 IO Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 0.1 0 IFSM PD 200 150 100 50 -55 to +125 12 Maximum Forward Voltage atREVERSE 1.0A DCVOLTAGE VR (V) 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 Am 30 Am ℃ 40 120 P -55 to +150 ℃ - 65 to +175 TSTG 4 8 CHARACTERISTICS ℃ 0 16 20 0 25 50 75 100 125 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage POWER DISSIPATION Maximum f=1MHz (mW) VRRM CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage 1Average Power Derating Curve 250 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH T =25 ℃ @T A=125℃ IR 0.50 AMBIENT Tj (℃) 0.70 TEMPERATURE 0.85 0.9 0.92 0.5 10 Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAS19W FM120-M+ BAS20W THRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant.070(1.80) .054(1.35) .045(1.15) Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 .047(1.20) Maximum DC Blocking Voltage superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) .004(0.10)MAX. Operating Temperature Range 115 150 120 200 Vol 35 42 56 70 105 140 Vol 50 60 80 100 150 200 Vol IFSM 30 Am RΘJA 40 120 -55 to +125 CHARACTERISTICS PF ℃ - 65 to +175 ℃ Maximum Average Reverse Current at @T A=25℃ IR .016(0.40) .008(0.20) @T A=125℃ .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF NOTES: ℃/W -55 to +150 TSTG Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 100 Am TJ Storage Temperature Range 80 1.0 CJ Typical Junction Capacitance (Note 1) 60 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave .010(0.25) 16 .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 0.50 0.70 0.85 0.9 0.92 0.5 Vol mAm 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.