Band Switching Diodes MA2X073 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1 1.6 − 0.1 ■ Features 2 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.55 ± 0.1 For band switching + 0.2 2.7 − 0.1 3.3 ± 0.2 *(3. 8 ± 0.2) 0.3 5° Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient temperature* Storage temperature Note) * : Maximum ambient temperature during operation + 0.1 Unit 0.16 − 0.03 Rating 0 to 0.05 Symbol 1.1 − 0.1 Parameter + 0.2 ■ Absolute Maximum Ratings Ta = 25°C 5° *( ): WL type 1 : Anode 2 : Cathode Mini Type Package (2-pin) Marking Symbol: 4B ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 33 V 0.01 100 nA Forward voltage (DC) VF IF = 100 mA 0.92 1 V Diode capacitance CD VR = 6 V, f = 1 MHz 0.9 1.2 pF IF = 2 mA, f = 100 MHz 0.65 0.85 Ω Forward dynamic resistance* rf Note) 1．Rated input/output frequency: 100 MHz 2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2X073 Band Switching Diodes IF V F 103 IR T a CD VR 10 Ta = 25°C 102 f = 1 MHz Ta = 25°C VR = 33 V 10 1 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 5 102 3 2 1 0.5 0.3 10 1 10−1 0.2 10−1 0.1 0 0.2 0.4 0.6 0.8 1.0 10−2 0 4 8 12 16 20 24 28 32 36 40 rf IF rf f 0.8 0.6 0.4 0.2 0 1 3 10 30 Forward current IF (mA) 2 1.0 f = 100 MHz Ta = 25°C Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 1.0 100 IF = 2 mA Ta = 25°C 0.8 0.6 0.4 0.2 0 10 30 100 300 Frequency f (MHz) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Reverse voltage VR (V) Forward voltage VF (V) 1 000