NTE56042 thru NTE56044 TRIAC, 16A, Sensitive Gate Description: The NTE56042 through NTE56044 are glass passivated, sensitive gate TRIACs in an isolated full– pack type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage, VDRM NTE56042 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56043 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56044 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non–Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2 I t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed 15A/µs. Electrical Characteristics: (TJ = +25°C unless otherwise specfied) Parameter Symbol Test Conditions Min Typ Max Unit – 2.5 10 mA MT2 (+), G (–) – 4.0 10 mA MT2 (–), G (–) – 5.0 10 mA MT2 (–), G (+) – 11 25 mA – 3.2 30 mA MT2 (+), G (–) – 16 40 mA MT2 (–), G (–) – 4.0 30 mA MT2 (–), G (+) – 5.5 40 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) VD = 12V, IT = 0.1A IL VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A – 4.0 30 mA On–State Voltage VT IT = 20A – 1.2 1.6 V VD = 12V, IT = 0.1A – 0.7 1.5 V 0.25 0.4 – V VD = VDRMmax, TJ = +125°C – 0.1 0.5 mA dVD/dt VDM = 67% VDRMmax, TJ = +125°C, Exponential Waveform, Gate Open – 50 – V/µs tgt ITM = 20A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/µs – 2 – µs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C Off–State Leakage Current ID Dynamic Characteristics Critical Rate–of–Rise of Off–State Voltage Gate Controlled Turn–On Time Isolation Characteristics (Ths = +25°C unless otherwise specified) RMS Isolation Voltage from All 3 Pins to External Heatsink VISOL R.H. ≤ 65%, Clean and Dustfree – – 1500 V Capacitance from T2 to External Heatsink CISOL f = 1MHz – 12 – pF .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) MT1 MT2 G .531 (13.5) Min .100 (2.54) .059 (1.5) Max .173 (4.4) Max .114 (2.9) Max