ON MMBTA43LT1 High voltage transistors(npn silicon) Datasheet

MMBTA42LT1,
MMBTA43LT1
MMBTA42LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
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• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
MMBTA42
MMBTA43
Unit
Collector −Emitter Voltage
VCEO
300
200
Vdc
Collector −Base Voltage
VCBO
300
200
Vdc
Emitter −Base Voltage
VEBO
6.0
6.0
Vdc
Collector Current−Continuous
IC
500
1
BASE
2
EMITTER
mAdc
THERMAL CHARACTERISTICS
3
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1
2
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAMS
1D X
M1E X
MMBTA42LT1
MMBTA43LT1
1D, M1E = Specific Device Code
X
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBTA42LT1
SOT−23
3000/Tape & Reel
MMBTA42LT1G
SOT−23
3000/Tape & Reel
MMBTA43LT1
SOT−23
3000/Tape & Reel
MMBTA43LT3
SOT−23
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 5
1
Publication Order Number:
MMBTA42LT1/D
MMBTA42LT1, MMBTA43LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
200
−
−
300
200
−
−
6.0
−
−
−
0.1
0.1
−
−
0.1
0.1
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MMBTA42
MMBTA43
Collector −Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
Vdc
V(BR)CBO
MMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MMBTA42
MMBTA43
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MMBTA42
MMBTA43
Vdc
Vdc
Adc
ICBO
Adc
IEBO
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
hFE
25
40
−
−
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
40
40
−
−
−
−
0.5
0.5
VBE(sat)
−
0.9
Vdc
fT
50
−
MHz
−
−
3.0
4.0
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
−
VCE(sat)
MMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MMBTA42
MMBTA43
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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2
pF
MMBTA42LT1, MMBTA43LT1
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
−55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f,
T CURRENT−GAIN BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
80
70
60
50
40
30
20
10
1.0
1000
TJ = 25°C
VCE = 20 V
f = 20 MHz
Figure 2. Capacitance
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current−Gain − Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ −55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
0.6
VBE(sat) @ −55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ −55°C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. “ON” Voltages
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3
MMBTA42LT1, MMBTA43LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
Figure 5. SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MMBTA42LT1/D
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