CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is available in lead-free SMD package. UMS A3667A YYWW Vd Main Features RFin RFout ■ Broadband performance 7-20GHz ■ Self-biased ■ 23dB gain @ 2.7dB noise figure ■ 20dBm Output power @1dBcp ■ DC power consumption, 175mA @ 4.2V ■ 24L-QFN4X4 SMD package ■ MSL1 Main Characteristics Tamb = +25°C, Vd= 4.2V Symbol Parameter Fop Input frequency range G Small signal gain NF Noise Figure P-1dB Output power at 1dB gain compression Id Bias current Min 7 21 18.5 130 Typ 23 2.7 20 175 Max 20 3.5 220 Unit GHz dB dB dBm mA ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA3667aQDG0158 - 07 Jun 10 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-20GHz Amplifier CHA3667aQDG Electrical Characteristics Tamb = +25°C, Vd= 4.2V Symbol Fop G NF RLin Parameter Min Operating frequency range Typ 7 Max Unit 20 GHz Gain (7-8GHz) 19 20 dB (8-19GHz) 21 23 dB (19-20GHz) 19 20 dB Noise figure (7-18GHz) 2.7 3.5 dB (7-19.5GHz) -10 -8 dB (19.5-20GHz) -8 -6 dB -8 dB Input Return Loss RLout Output Return Loss -10 OIP3 Output IP3 28 dBm P1dB Pout at 1dB gain compression (7-13GHz) 20 dBm (13-20GHz) 21 dBm Isol Reverse isolation 40 dB Vd Drain bias voltage 4.2 V Id Drain bias current 130 175 220 mA These values are representative of on board measurements as defined on the drawing in paragraph “Evaluation board”. Ref. : DSCHA3667aQDG0158 - 07 Jun 10 2/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.5V V Id Power supply quiescent current 240 mA Pin RF input power (2) 3 dBm Top Operating temperature range -40 to +85 °C 175 °C -55 to +125 °C Tj Tstg Junction temperature (3) Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration<1s Ref.: DSCHA3667aQDG0158 - 07 Jun 10 3/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA3667aQDG Recommanded max. junction temperature (Tj max) : 167 °C Junction temperature absolute maximum rating : 175 °C Max. continuous dissipated power @ Tcase= 85 °C : 0.81 W (1) => Pdiss derating above Tcase = 85 °C : 10 mW/°C (2) Junction-Case thermal resistance (Rth J-C) : <100 °C/W (3) Min. package back side operating temperature : -40 °C (3) Max. package back side operating temperature : 85 °C Min. storage temperature : -55 °C Max. storage temperature : 125 °C (1) Derating at junction temperature constant = Tj max (2) Rth J-C is calculated for a worst case where the hotter junction of the MMIC is considered. (3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below). Tcase 0.9 0.8 0.7 0.5 0.4 0.3 0.2 Pdiss. Max. (W) 0.1 Pdiss. Max. (W) 0.6 Example of QFN 16L 3x3 back-side view, temperature reference point (Tcase) location. 0 -50 -25 0 25 50 75 100 125 Tcase (°C ) 5.8 Ref. : DSCHA3667aQDG0158 - 07 Jun 10 4/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Typical Package Sij parameters Tamb = +25°C, Vd= 4.2V, Typical Id=175mA FREQ ( GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (dB) -1.6 -1.2 -1.0 -1.1 -4.3 -16.0 -12.7 -13.2 -15.4 -17.1 -16.2 -15.3 -15.4 -16.4 -17.4 -19.3 -18.0 -13.3 -9.1 -7.0 -6.6 -6.9 -7.3 -7.6 -6.7 -6.0 Ph(S11) ( °) 91.1 12.0 -57.5 -126.1 135.4 -42.1 -135.1 -172.1 167.2 162.1 155.7 140.5 116.5 93.2 63.7 15.4 -55.1 -122.2 -176.6 130.0 81.5 39.1 0.9 -34.0 -68.1 -117.3 S21 dB -64.6 -43.4 -24.6 3.1 16.3 19.8 20.7 21.7 22.3 23.0 23.3 23.3 23.2 22.8 22.8 23.1 23.1 23.0 22.5 20.7 18.1 15.1 12.1 8.8 4.8 -2.4 Ph(S21) ( °) -77.9 -51.5 -99.2 143.8 5.1 -122.8 147.2 70.9 2.8 -62.5 -125.7 174.7 116.2 61.6 7.5 -46.7 -103.7 -163.7 133.0 67.8 6.9 -50.4 -105.2 -161.0 140.6 86.8 S12 dB -74.9 -80.6 -65.2 -65.6 -67.4 -70.3 -74.9 -61.5 -63.6 -61.1 -63.3 -69.4 -66.5 -69.7 -60.5 -53.7 -57.1 -51.1 -48.0 -47.3 -55.3 -58.1 -47.8 -44.6 -46.8 -45.4 Ph(S12) ( °) -11.4 -71.0 138.5 11.7 59.6 4.7 173.9 94.7 55.3 -4.2 -15.4 -84.6 140.1 138.0 161.0 109.5 54.6 90.9 48.6 13.1 -22.0 -24.0 92.8 29.3 -7.3 -8.8 S22 dB -1.7 -1.6 -1.8 -6.5 -8.6 -9.6 -11.5 -14.6 -18.9 -21.7 -19.7 -19.8 -20.9 -27.5 -29.4 -22.8 -20.4 -17.0 -12.7 -9.8 -8.8 -8.2 -7.8 -7.4 -6.6 -6.4 Ph(S22) ( °) 95.7 16.6 -58.8 -120.6 -144.5 -173.4 157.3 133.6 122.4 137.8 141.6 124.6 95.1 33.8 -74.4 -112.8 -122.7 -134.8 -149.2 178.1 144.9 111.5 78.6 48.1 16.8 -19.3 The Sij measurement calibration planes are defined in the paragraph “Definition of the Sij reference planes”. Ref.: DSCHA3667aQDG0158 - 07 Jun 10 5/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Typical Measured Performances Tamb = +25°C, Vd= 4.2V, Typical Id=175mA Measurements in the package access plan, using the proposed land pattern & board, as defined in paragraph “Evaluation mother board:". Gain & Input / Output return loss (dB) S parameters versus frequency 25 20 S21 15 10 5 0 -5 -10 S11 S22 -15 -20 -25 1 3 5 7 9 11 13 15 Freq ( GHz) 17 19 21 23 25 Noise figure versus frequency (Losses due to board have been removed) 10 9 8 NF( dB) 7 6 5 4 3 2 1 0 5 7 9 11 13 15 17 19 21 Frequency ( GHz) Ref. : DSCHA3667aQDG0158 - 07 Jun 10 6/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Typical Measured Performances Tamb = +25°C, Vd= 4.2V, Typical Id=175mA Measurements in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph “Evaluation mother board:". Ouput power & associated consumption Id @ 1dB compression 25 280 24 260 240 P-1dB (dBm) 22 21 220 20 200 19 180 18 160 17 Consumption for P-1dB ( mA) 23 140 16 15 120 7 8 9 10 11 12 13 14 15 Frequency ( GHz) 16 17 18 19 20 Output IP3 versus single output power 40 38 36 Output IP3 ( dBm) 34 32 30 28 26 IP3 (7GHz & +25°C) 24 IP3 (8GHz & +25°C) IP3 (10GHz & +25°C) 22 IP3 (14GHz & +25°C) 20 IP3 (18GHz & +25°C) IP3 (20GHz & +25°C) 18 16 2 4 Ref.: DSCHA3667aQDG0158 - 07 Jun 10 6 8 10 12 14 Single output power (dBm) 7/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 16 18 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Typical Measured Performances in Temperature Tamb = -40°C, +25°C, +85°C, Vd= 4.2V, Typical Id=17 5mA Measurements in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph “Evaluation mother board:". Linear gain versus frequency and temperature 29 27 -40°C +25°C 25 Gain (dB) 23 21 +85°C 19 17 15 13 11 9 5 7 9 11 13 15 17 19 21 Frequency (GHz) Reverse isolation versus frequency and temperature -30 -35 Reverse Isolation(dB) -40 -45 -50 -40°C -55 -60 -65 +85°C -70 +25°C -75 -80 5 7 9 Ref. : DSCHA3667aQDG0158 - 07 Jun 10 11 13 15 Frequency (GHz) 8/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 17 19 21 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Noise figure versus frequency and temperature (losses due to board have been removed) NF( dB) 6.0 5.5 5.0 4.5 4.0 3.5 +85°C +25°C 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40°C 5 7 9 11 13 15 17 19 21 Frequency ( GHz) Consumption versus temperature Consumption Id (mA) 185 180 175 170 165 160 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Temperature (°C) Ref.: DSCHA3667aQDG0158 - 07 Jun 10 9/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Pout @1dB compresssion versus frequency and temperature 24 23 -40°C 22 Pout @ 1dBc (dBm) +25°C 21 20 +85°C 19 18 17 16 15 14 7 9 11 13 15 17 19 Freq ( GHz) Gain and Pout versus frequency and temperature @ 7GHz -40°C +25°C +85°C -40°C +25°C +85°C Ref. : DSCHA3667aQDG0158 - 07 Jun 10 10/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Gain and Pout versus frequency and temperature @ 16GHz -40°C +25°C +85°C +25°C -40°C +85°C Gain and Pout versus frequency and temperature @ 20GHz -40°C +25°C +85°C +25°C -40°C +85°C Ref.: DSCHA3667aQDG0158 - 07 Jun 10 11/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Output IP3 (dBm) Output IP3 versus single output power and temperature @ 7GHz 40 38 36 34 32 30 28 26 24 22 20 18 16 IP3 (7GHz & +25°C) IP3 (7GHz & +85°C) IP3 (7GHz & -40°C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Output IP3 (dBm) Output IP3 versus single output power and temperature @ 20GHz 40 38 36 34 32 30 28 26 24 22 20 18 16 IP3 (20GHz & +25°C) IP3 (20GHz &+ 85°C) IP3 (20GHz & -40°C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Ref. : DSCHA3667aQDG0158 - 07 Jun 10 12/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Package outline (1) A3667A Matt tin, Lead Free (Green) 1- Nc 13- Nc Units mm 2- Nc 14- Gnd From the standard JEDEC MO-220 3- Gnd 15- RF OUT (VGGD) 4- RF IN 16- Gnd 5- Gnd 17- Nc 6- Nc 18- Nc 7- Nc 19- Nc 8- Nc 20- VD 9- Nc 21- Nc 10- Nc 22- Nc 11- Nc 23- Nc 12- Nc 24- Nc 25- GND (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 available at http://www.ums-gaas.com for exact package dimensions. It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref.: DSCHA3667aQDG0158 - 07 Jun 10 13/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation motherboard". 3.18 3.18 Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations and exact package dimensions. SMD mounting procedure The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. Recommended environmental management Refer to the application note AN0019 available at http://www.ums-gaas.com for environmental data on UMS package products. Ref. : DSCHA3667aQDG0158 - 07 Jun 10 14/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Notes Due to ESD protection circuits, RFin and RFout are DC grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vd Vd RFin RFout Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ref. : DSCHA3667aQDG0158 - 07 Jun 10 15/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Evaluation mother board: Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Decoupling capacitors of 10nF ±10% are recommended for all DC accesses. (See application note AN0017 for details). Ordering Information QFN 4x4 RoHS compliant package: CHA3667aQDG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3667aQDG0158 - 07 Jun 10 16/16 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice