Taychipst BYG50J Controlled avalanche rectifier Datasheet

BYG50D THRU BYG50M
Controlled avalanche rectifiers
200V-1000V
0.7A-2.1A
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
UNIT
BYG50D
−
200
V
BYG50G
−
400
V
BYG50J
−
600
V
BYG50K
−
800
V
BYG50M
−
1000
V
−
200
V
continuous reverse voltage
BYG50G
−
400
V
BYG50J
−
600
V
BYG50K
−
800
V
−
1000
BYG50M
IFSM
MAX.
repetitive peak reverse voltage
BYG50D
IF(AV)
MIN.
average forward current
non-repetitive peak forward current
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V
averaged over any 20 ms
period; Ttp = 100 °C; see Fig.2
−
2.1
A
averaged over any 20 ms
period; Al2O3 PCB mounting (see
Fig.7); Tamb = 60 °C; see Fig.3
−
1.0
A
averaged over any 20 ms
period; epoxy PCB mounting
(see Fig.7); Tamb = 60 °C;
see Fig.3
−
0.7
A
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
1 of 3
30
A
Web Site: www.taychipst.com
BYG50D THRU BYG50M
200V-1000V
Controlled avalanche rectifiers
SYMBOL
MIN.
MAX.
BYG50D to J
−
10
mJ
BYG50K and M
−
7
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
TYP.
MAX.
ERSM
PARAMETER
CONDITIONS
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
0.7A-2.1A
see Fig.4
UNIT
ELECTRICAL CHARACTERISTICS
SYMBOL
VF
V(BR)R
PARAMETER
CONDITIONS
forward voltage
reverse avalanche
breakdown voltage
MIN.
IF = 1 A; Tj = Tj max; see Fig.5
−
−
0.85
V
IF = 1 A; see Fig.5
−
−
1.00
V
IR = 0.1 mA
BYG50D
300
−
−
V
BYG50G
500
−
−
V
BYG50J
700
−
−
V
BYG50K
900
−
−
V
−
V
1100
−
VR = VRRMmax; see Fig.6
−
−
1
µA
VR = VRRMmax; Tj = 165 °C; see Fig.6
−
−
100
µA
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
−
2
BYG50M
IR
trr
UNIT
reverse current
reverse recovery time
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
25
K/W
note 1
100
K/W
note 2
150
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
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BYG50D THRU BYG50M
200V-1000V
Controlled avalanche rectifiers
RATINGS AND CHARACTERISTIC CURVES
0.7A-2.1A
BYG50D THRU BYG50M
2.0
IF(AV)
4
handbook, halfpage
handbook, halfpage
IF(AV)
(A)
(A)
1.6
3
1.2
2
0.8
1
0.4
0
0
0
40
80
160
200
Ttp (°C)
120
0
Fig.2
Fig.1 Maximum permissible average forward
current as a function of tie-point temperature
40
80
120
160
200
Tamb (°C)
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
10
200
Tj
(°C)
IF
handbook, halfpage
(A)
8
160
handbook,
6 halfpage
120
4
80
D
G
J
K
M
2
40
0
0
0
400
800
VR (V)
0
1200
0.4
0.8
1.2
1.6
2.0
VF (V)
Fig. 4 Forward current as a function of forward
voltage; maximum values.
Fig.3 Maximum permissible junction temperature
as a function of reverse voltage.
3
10halfpage
handbook,
IR
(µA)
10 2
10
1
0
40
80
120
160
200
Tj (oC)
Fig.5 Reverse current as a function of junction
.
temperature;
maximum values.
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