Rectron MMST3904 Sot-323 bipolar transistors transistor (npn) Datasheet

RECTRON
MMST3904
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
* Power dissipation
O
Pcm: 0.2 W (Tamb=25 C)
* Collector current
Icm: 0.2 A
* Collector-base voltage
V(BR)CBO: 60 V
* Operationg and storage junction temperature range
O
O
TJ,Tstg: -55 Cto +150 C
SOT-323
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.006 gram
0.051(1.30)
0.047(1.20)
REF .040(1.01)
0.092(2.35)
0.089(2.25)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.052(1.33)
0.050(1.27)
Ratings at 25 o C ambient temperature unless otherwise specified.
0.081(2.05)
0.077(1.95)
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
SYMBOL
VALUE
UNITS
-
-
-
Max. Steady State Power Dissipation (1)
PD
200
mW
Max. Operating Temperature Range
TJ
150
o
C
TSTG
-55 to +150
o
C
Storage Temperature Range
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (1)
Max. Instantaneous Forward Voltage at IF= 10mA
SYMBOL
MIN.
TYP.
MAX.
R θJA
-
-
625
VF
-
-
-
NOTES : 1.Valid provided that terminals are kept at ambient temperature.
UNITS
o
C/W
Volts
2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (2)
Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage (I C = 10µAdc, I E = 0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage (I E = 10µAdc, I C = 0)
V(BR)EBO
5.0
-
Vdc
Collector Cutoff Current (V CE = 40Vdc,I B =0)
ICEO
-
0.1
nAdc
Collector Cutoff Current (V CB = 60Vdc, I E = 0)
ICBO
-
0.1
µAdc
Emitter Cutoff Current (V EB = 5Vdc, I C = 0)
IEBO
-
0.1
µAdc
IBL
-
50
nAdc
DC Current Gain (I C = 100µAdc, V CE = 1.0Vdc)
40
-
(I C = 1.0mAdc, V CE = 1.0Vdc)
70
-
100
300
(I C = 50mAdc, V CE = 1.0Vdc)
60
-
(I C = 100mAdc, V CE = 1.0Vdc)
30
-
-
0.25
-
0.30
0.65
0.85
-
0.95
Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc
ON CHARACTERISTICS (2)
(I C = 10mAdc, V CE = 1.0Vdc)
Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
hFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
250
-
MHz
Output Capacitance (V CE =0.5Vdc, I C = 0, f= 1.0MHz)
Cobo
-
4.0
pF
Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz)
Cibo
-
8.0
pF
Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz)
hie
1.0
10
kΩ
Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
hre
0.5
8.0
X 10-4
Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
hfe
100
400
-
Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
hoe
1.0
40
µs
Noise Figure (I C = 100µAdc, V CE = 5.0Vdc, R S = 1.0kΩ, f= 1.0kHz)
NF
-
5.0
dB
td
-
35
tr
-
35
ts
-
200
tf
-
50
Current-Gain-Bandwidth Product (3) (I C = 10mAdc, V CE = 20Vdc, f= 100MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 3Vdc, V BE = 0.5Vdc, I C = 10mAdc, I B1 = 1mAdc)
(V CC = 3Vdc, I C = 10mAdc, I B1 = I B2 = 1mAdc)
ns
ns
<300µs,Duty Cycle<2.0%
NOTES : 2. Pulse Test: Pulse Width-
RECTRON
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