RECTRON MMST3904 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation (1) PD 200 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - NOTES : 1.Valid provided that terminals are kept at ambient temperature. UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS (2) Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 10µAdc, I E = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (I E = 10µAdc, I C = 0) V(BR)EBO 5.0 - Vdc Collector Cutoff Current (V CE = 40Vdc,I B =0) ICEO - 0.1 nAdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) ICBO - 0.1 µAdc Emitter Cutoff Current (V EB = 5Vdc, I C = 0) IEBO - 0.1 µAdc IBL - 50 nAdc DC Current Gain (I C = 100µAdc, V CE = 1.0Vdc) 40 - (I C = 1.0mAdc, V CE = 1.0Vdc) 70 - 100 300 (I C = 50mAdc, V CE = 1.0Vdc) 60 - (I C = 100mAdc, V CE = 1.0Vdc) 30 - - 0.25 - 0.30 0.65 0.85 - 0.95 Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc ON CHARACTERISTICS (2) (I C = 10mAdc, V CE = 1.0Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) hFE VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT 250 - MHz Output Capacitance (V CE =0.5Vdc, I C = 0, f= 1.0MHz) Cobo - 4.0 pF Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) Cibo - 8.0 pF Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) hie 1.0 10 kΩ Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) hre 0.5 8.0 X 10-4 Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) hfe 100 400 - Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) hoe 1.0 40 µs Noise Figure (I C = 100µAdc, V CE = 5.0Vdc, R S = 1.0kΩ, f= 1.0kHz) NF - 5.0 dB td - 35 tr - 35 ts - 200 tf - 50 Current-Gain-Bandwidth Product (3) (I C = 10mAdc, V CE = 20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3Vdc, V BE = 0.5Vdc, I C = 10mAdc, I B1 = 1mAdc) (V CC = 3Vdc, I C = 10mAdc, I B1 = I B2 = 1mAdc) ns ns <300µs,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON