Intersil HFA3127/883 Ultra high frequency transistor array Datasheet

HFA3127/883
Ultra High Frequency Transistor Array
February 1995
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HFA3127/883 is an Ultra High Frequency Transistor
Array fabricated on the Intersil Corporation complementary
bipolar UHF-1 process. This array consists of five dielectrically isolated transistors on a common monolithic substrate.
The high fT (8GHz) and low noise figure (3.5dB) of these
transistors make them ideal for high frequency amplifier and
mixer applications.
• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . .8GHz (Typ)
• NPN Current Gain . . . . . . . . . . . . . . . . . . . . . . . 40 (Min)
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20 (Min)
The HFA3127/883 is an all-NPN array. Access is provided to
each of the terminals of the individual transistors for maximum application flexibility. The monolithic construction of the
array provides close electrical and thermal matching of the
five transistors.
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
SMD 5962-9474901MEA version is also available from Intersil Corporation.
Applications
Ordering Information
• VHF/UHF Amplifiers
• VHF/UHF Mixers
PART NUMBER
• IF Converters
HFA3127MJ/883
• Synchronous Detectors
TEMPERATURE
-55oC to +125oC
PACKAGE
16 Lead CerDIP
Pinout
HFA3127/883
(CERDIP)
TOP VIEW
16
1
Q1
2
14
3
4
Q2
13
NC 5
Q5
12
11
6
10
7
8
15
Q3
Q4
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
3967
511120
File Number
Spec Number
Specifications HFA3127/883
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0V
Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.0V
Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Collector Current at 100% Duty Cycle, 175oC TJ . . . . . . . . . 11.3mA
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC
Junction Temperature (DIE) . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Resistance
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . . 80oC/W
24oC/W
Maximum Package Power Dissipation at +75o
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Collector-to-Base
Breakdown Voltage
Collector-to-Emitter
Breakdown Voltage
Collector-to-Emitter
Breakdown Voltage
Emitter-to-Base Breakdown
Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Collector-to-Emitter
Saturation Voltage
Base-to-Emitter Voltage
DC Forward Current
Transfer Ratio
Early Voltage
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICEO
ICBO
VCE(SAT)
VBE
hFE
VA
CONDITIONS
IC = 100µA, IE = 0
IC = 100µA, IB = 0
IC = 100µA, Base Shorted
tp Emitter
IE = 10µA, IC = 0
VCE = 6V, IB = 0
VCB = 8V, IE = 0
IC = 10mA, IB = 1mA
IC = 10mA
IC = 10mA, VCE = 2V
IC = 10mA, VCE = 3.5V
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
12
-
V
2, 3
+125oC to -55oC
12
-
V
1
+25oC
8
-
V
2, 3
+125oC to -55oC
8
-
V
1
+25oC
10
-
V
2, 3
+125oC to -55oC
10
-
V
1
+25oC
5.5
-
V
2, 3
+125oC to -55oC
5.5
-
V
1
+25oC
-
100
nA
2, 3
+125oC to -55oC
-
100
nA
1
+25oC
-
10
nA
2, 3
+125oC to -55oC
-
10
nA
1
+25oC
-
0.5
V
2, 3
+125oC to -55oC
-
0.5
V
1
+25oC
-
0.95
V
2, 3
+125oC to -55oC
-
1.05
V
1
+25oC
40
-
-
2, 3
+125oC to -55oC
20
-
-
1
+25oC
20
-
V
2, 3
+125oC to -55oC
20
-
V
Spec Number
2
511120
Specifications HFA3127/883
TABLE 2. ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 3 Intentionally Left Blank.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
3
511120
HFA3127/883
Test Circuits
(Applies to Table 1)
100µA
100µA
100µA
10µA
V
V
BVCBO
V
V
BVCEO
BVCES
BVEBO
READ 10mA
10mA
A
A
A
8V
6V
V
1mA
ICEO
ICBO
VCE(SAT)
READ 10mA
ADJ.
2V
VBE
MONITOR
MONITOR
A
A
V
A
R
V
2V
ADJ.
ADJ.
HFE
ADJUST
VA
Burn-In Circuit
10.5V ± 0.5V
100 ±5%
0.01µF
5.5V ± 0.5V
0.01µF
16
1
Q1
2
4
Q2
NC 5
13
12
Q5
10
7
8
1K ±5%
11
6
1K ±5%
1K ±5%
14
3
1K ±5%
15
Q3
Q4
9
1K ±5%
Spec Number
4
511120
HFA3127/883
Die Characteristics
DIE DIMENSIONS:
52 x 52.8 x 15 1mils
1320µm x 1340µm x 381µm ± 25.4µm
METALIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ± 0.5kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
WORST CASE CURRENT DENSITY:
3.04 x 105A/cm2
TRANSISTOR COUNT: 5
SUBSTRATE POTENTIAL:
Floating
Metallization Mask Layout
Pad numbers correspond to the 16 pin DIP pinout.
HFA3127/883
2
16
1
15
3
14
4
13
5
12
6
11
7
8
9
10
Spec Number
5
511120
HFA3127
DESIGN INFORMATION
Ultra High Frequency Transistor Array
February 1995
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Electrical Specifications
at TA = +25oC
TYP
UNITS
Noise Figure
PARAMETERS
f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50Ω
TEST CONDITIONS
3.5
dB
fT Current Gain-Bandwidth Product
IC = 1mA, VCE = 5V
5.5
GHz
IC = 10mA, VCE = 5V
8
GHz
IC = 10mA, VCE = 5V
2.5
GHz
1
pA
Power Gain-Bandwidth Product, fMAX
Collector-to-Collector Leakage
Collector-to-Base Capacitance
0V, 1MHz
1.6
pF
Base-to-Emitter Capacitance
0V, 1MHz
2.2
pF
Collector-to-Emitter Capacitance
0V, 1MHz
1.9
pF
NOTE: Package interlead capacitance is taken into account for all capacitance measurements.
25
IB = 200µA
20
IB = 160µA
100m
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
Typical Performance Curves
IB =120µA
15
IB = 80µA
10
IB = 40µA
5
VCE = 3V
IC
10m
IB
1m
100µ
10µ
1µ
100n
10n
0
1
2
3
4
COLLECTOR TO EMITTER VOLTAGE (V)
1n
0.5
5
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
10.0
GAIN BANDWIDTH PRODUCT (GHz)
DC CURRENT GAIN
160
140
120
100
80
60
40
20
10µ
1.0
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE
TO EMITTER VOLTAGE
VCE = 3V
0
1µ
0.6
0.7
0.8
0.9
BASE TO EMITTER VOLTAGE (V)
100µ
1m
10m
VCE = 3V
8.0
VCE = 5V
6.0
4.0
2.0
0
0.1
100m
VCE = 1V
1.0
10
100
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (A)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR
CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
Spec Number
6
511120
HFA3127
Ceramic Dual-In-Line Frit Seal Packages (CerDIP)
c1
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
LEAD FINISH
16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
-D-
-A-
BASE
METAL
INCHES
(c)
E
b1
M
M
(b)
-Bbbb S
C A-B S
SECTION A-A
D S
D
BASE
PLANE
Q
-C-
SEATING
PLANE
A
α
L
S1
eA
A A
b2
e
b
ccc M
C A-B S
D S
eA/2
c
aaa M C A - B S D S
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.200
-
5.08
-
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.840
-
21.34
5
E
0.220
0.310
5.59
7.87
5
e
0.100 BSC
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
3.81 BSC
-
eA/2
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
MILLIMETERS
0.150 BSC
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
6
S1
0.005
-
0.13
-
7
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
0.038
2, 3
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
N
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
16
16
8
Rev. 0 4/94
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Spec Number
7
511120
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