Formosa FM380-MT Chip schottky barrier rectifier Datasheet

Chip Schottky Barrier Rectifier
FM320-MT THRU FM3100-MT
Formosa MS
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
Chip Schottky Barrier Rectifier
Formosa MS
FM320-MT THRU FM3100-MT
3.0A Surface Mount Schottky Barrier
Rectifiers - 20V-100V
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123T
• Low profile surface mounted application in order to
optimize board space.
0.156(3.9)
0.140(3.5)
• Tiny plastic SMD package.
• Low power loss, high efficiency.
• High current capability, l ow forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.075(1.9)
0.060(1.5)
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FM320-MT-H.
0.067(1.7)
0.051(1.3)
Mechanical data
0.008(0.20)Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123T / MINI SMA
• Terminals :Plated terminals, solderable per MIL-STD-750,
0.096(2.4)
0.040 (1.0)
0.080(2.0)
0.024 (0.6)
0.024(0.6)Typ.
0.064(1.6)
0.048(1.2)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.018 gram
0.036(0.9)
0.020(0.5)
0.052(1.3)
0.036(0.9)
0.0375(0.95)
0.0296(0.75)
0.044(1.10)
0.028(0.70)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
Symbol
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
MIN.
TYP.
O
V R = V RRM T J = 100 C
Thermal resistance
Diode junction capacitance
3.0
A
I FSM
50
A
mA
80
O
C/W
Junction to case
R θJC
40
O
CJ
160
C/W
pF
f=1MHz and applied 4V DC reverse voltage
T STG
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
FM320-MT
20
14
20
FM330-MT
30
21
30
FM340-MT
40
28
40
FM350-MT
50
35
50
42
60
FM380-MT
80
56
80
FM3100-MT
100
70
100
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FAX:886-2-22696141
10
R θJA
SYMBOLS
60
0.2
IR
Junction to ambient
Storage temperature
FM360-MT
UNIT
IO
O
V R = V RRM T J = 25 C
Reverse current
MAX.
*4
VF
(V)
Operating
temperature
T J, ( OC)
0.55
-55 to +125
-65
O
+175
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.70
-55 to +150
*4 Maximum forward voltage@I F=3.0A
0.85
Page 2
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
Rating and characteristic curves (FM320-MT THRU FM3100-MT)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
3.0
50
-M
T
T
-M
1.0
100
340
FM
1.5
0.5
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,(A)
T~
-M
M3
~F
MT
2.0
50-
320
FM
3
FM
2.5
20V ~ 40V
10
50V ~ 60V
80V ~ 100V
3.0
1.0
0.1
TJ=25 C
Pulse Width 300us
1% Duty Cycle
PEAK FORWARD SURGE CURRENT,(A)
50
.01
40
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
30
8.3ms Single Half
TJ=25 C
Sine Wave
20
JEDEC method
10
FIG.5 - TYPICAL REVERSE
0
1
5
50
10
CHARACTERISTICS
100
100
20V~40V
50V~100V
NUMBER OF CYCLES AT 60Hz
10
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
700
600
500
400
300
200
TJ=100°C
1.0
0.1
TJ=25°C
0.01
100
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Page 3
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
Chip Schottky Barrier Rectifier
FM320-MT THRU FM3100-MT
Formosa MS
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
Symbol
1
2
1
2
Marking
Type number
Marking code
FM320-MT
FM330-MT
FM340-MT
FM350-MT
FM360-MT
FM380-MT
FM3100-MT
32
33
34
35
36
38
310
Suggested solder pad layout
0.016 (0.40)
0.024 (0.60)
0.056 (1.40)
0.048 (1.20)
0.083 (2.10)
0.037 (0.95)
0.040(1.00)
0.041 (1.05)
0.041 (1.05)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
Chip Schottky Barrier Rectifier
Formosa MS
FM320-MT THRU FM3100-MT
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOD-123T
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
1.90
3.90
1.68
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
Chip Schottky Barrier Rectifier
Formosa MS
FM320-MT THRU FM3100-MT
Reel packing
PACKAGE
SOD-123T
REEL SIZE
7"
COMPONENT
SPACING
REEL
(pcs)
(m/m)
4.0
2,500
BOX
(pcs)
25,000
INNER
BOX
REEL
DIA,
CARTON
SIZE
CARTON
APPROX.
GROSS WEIGHT
(m/m)
(m/m)
(m/m)
(pcs)
(kg)
183*183*123
178
382*262*387
9.5
200,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<3 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
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<6minutes
Page 6
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
Chip Schottky Barrier Rectifier
FM320-MT THRU FM3100-MT
Formosa MS
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=125 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
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MIL-STD-750D
METHOD-1031
O
Page 7
Document ID
Issued Date
DS-12162C
2009/02/10
Revised Date
2011/12/02
Revision
Page.
E
7
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