BZT52C2V4 ... BZT52C75 (500 mW) BZT52C2V4 ... BZT52C75 (500 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage ±0.2 3.8 Type Code Maximum power dissipation Maximale Verlustleistung 500 mW Nominal Z-voltage Nominale Z-Spannung 3...75 V Plastic case Kunststoffgehäuse 1.6±0 .1 0.6 ±0.1 1 .1 ±0 .1 2.7±0.1 0 .1 2 Version 2015-03-10 ~SOD-123 Weight approx. Gewicht ca. 0.01 g Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Maße [mm] Standard Zener voltage tolerance is graded to the international E 24 (~ ±5%) standard. Other voltage tolerances and higher Zener voltages on request. Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen Reihe E 24 (~ ±5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage. Maximum ratings and Characteristics Grenz- und Kennwerte BZT52-series Ptot 500 mW 1) Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 300 K/W 1) Thermal resistance junction to terminal Wärmewiderstand Sperrschicht – Anschluss RthT < 240 K/W Power dissipation – Verlustleistung TA = 25°C Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite Marking – Stempelung (alternative) 1 BZT52C2V4 = MH, WX, 4C BZT52C6V2 = NA, WA, 4R BZT52C16 = NN, WK, 5H BZT52C43 = WU, 6A BZT52C2V7 = MJ, W1, 4D BZT52C6V8 = NB, WB, 4X BZT52C18 = NP, WL, 5J BZT52C47 = WV, 6B BZT52C3V0 = MK, W2, 4E BZT52C7V5 = NC, WC, 4Y BZT52C20 = NR, WM, 5K BZT52C51 = WW, 6C BZT52C3V3 = MM, W3, 4F BZT52C8V2 = ND, WD, 4Z BZT52C22 = NX, WN, 5M BZT52C56 = 6D BZT52C3V6 = MN, W4, 4H BZT52C9V1 = NE, WE, 5A BZT52C24 = NY, WO, 5N BZT52C62 = 6E BZT52C3V9 = MP, W5, 4J BZT52C10 = NE, WF, 5B BZT52C27 = NZ, WP, 5P BZT52C68 = 6F BZT52C4V3 = MR, W6, 4K BZT52C11 = NH, WG, 5C BZT52C30 = PA, WQ, 5R BZT52C75 = 6H BZT52C4V7 = MX, W7, 4M BZT52C12 = NJ, WH, 5D BZT52C33 = PB, WR, 5X BZT52C5V1 = MY, W8, 4N BZT52C13 = NK, WI, 5E BZT52C36 = PC, WS, 5Y BZT52C5V6 = MZ, W9, 4P BZT52C15 = NM, WJ, 5F BZT52C39 = PD, WT, 5Z Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss) © Diotec Semiconductor AG http://www.diotec.com/ 1 BZT52C2V4 ... BZT52C75 (500 mW) Maximum ratings and Characteristics Grenz- und Kennwerte (Tj = 25°C unless otherwise specified) Type Typ Z-voltage range 1) Z-Spanngs.-Bereich 1) IZT = 5mA (Tj = 25°C wenn nicht anders spezifiziert) Dynamic resistance Diff. Widerstand Temp. Coeffic. of Z-voltage …der Z-Spannung Reverse volt. Sperrspanng. IR = 100 nA Z-current 2) Z-Strom 2) TA = 25°C VZ min [V] VZ max [V] ZZK [Ω] IZK [mA] αVZ [10-4 /°C] VR [V] IZmax [mA] BZT52C2V4 2.2 2.6 < 100 5 -9...-6 1 (<50 µA) 192 BZT52C2V7 2.5 2.9 < 110 5 -9...-6 1 (<20 µA) 172 BZT52C3V0 2.8 3.2 < 120 5 -8...-5 1 (<10 µA) 156 BZT52C3V3 3.1 3.5 < 130 5 -8...-5 1 (<5 µA) 143 BZT52C3V6 3.4 3.8 < 130 5 -8...-5 1 (<5 µA) 132 BZT52C3V9 3.6 4.2 < 130 5 -8...-5 1 (<3 µA) 119 BZT52C4V3 4.0 4.6 < 130 5 -6...-3 1 (<3 µA) 109 BZT52C4V7 4.4 5.0 < 130 5 -5...+2 2 (<3 µA) 100 BZT52C5V1 4.8 5.4 < 130 5 -2...+2 2 (<2 µA) 93 BZT52C5V6 5.2 6.0 < 80 5 -5...+5 2 (<1 µA) 83 BZT52C6V2 5.8 6.6 < 50 5 -3...+6 4 (<3 µA) 76 BZT52C6V8 6.4 7.2 < 30 5 +3...+7 4 (<2 µA) 69 BZT52C7V5 7.0 7.9 < 30 5 +3...+7 5 (<1 µA) 63 BZT52C8V2 7.7 8.7 < 30 5 +8...+7 5 (<0.7 µA) 57 BZT52C9V1 8.5 9.6 < 30 5 +3...+9 6 (<0.5 µA) 52 BZT52C10 9.4 10.6 < 30 5 +3...+10 7 47 BZT52C11 10.4 11.6 < 30 5 +3...+11 8 43 BZT52C12 11.4 12.7 < 35 5 +3...+11 9 39 BZT52C13 12.4 14.1 < 35 5 +3...+11 10 35 BZT52C15 13.8 15.6 < 40 5 +3...+11 11 32 BZT52C16 15.3 17.1 < 40 5 +3...+11 12 29 BZT52C18 16.8 19.1 < 45 5 +3...+11 13 26 BZT52C20 18.8 21.2 < 50 5 +3...+11 15 24 BZT52C22 20.8 23.3 < 55 5 +4...+12 17 21 BZT52C24 22.8 25.6 < 60 5 +4...+12 19 20 BZT52C27 25.1 28.9 < 70 2 +4...+12 21 17 BZT52C30 28 32 < 80 2 +4...+12 23 16 BZT52C33 31 35 < 80 2 +4...+12 25 14 BZT52C36 34 38 < 90 2 +4...+12 27 13 IZT = 2.5 mA BZT52C39 37 41 <100 2 +4...+12 30 (< 2 µA) 12 BZT52C43 40 46 <130 2 +4...+12 33 (< 2 µA) 11 BZT52C47 44 50 <150 2 +4...+12 36 (< 2 µA) 10 BZT52C51 48 54 <180 2 +4...+12 39 (< 1 µA) 9 BZT52C56 52 60 <180 2 +4...+12 43 (< 1 µA) 8 BZT52C62 58 66 <200 2 +4...+12 47 (<0.2 µA) 8 BZT52C68 64 72 <250 2 +4...+12 52 (<0.2 µA) 7 BZT52C75 70 79 <300 2 +4...+12 57 (<0.2 µA) 6 1 2 2 Tested with pulses (20 ms) – Gemessen mit Impulsen (20 ms) Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss) http://www.diotec.com/ © Diotec Semiconductor AG