isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW21194 DESCRIPTION •Total Harmonic Distortion Characterized • High DC Current Gain – h FE = 20 Min @ I C = 8 Adc ·High SOA: 2.25A, 80 V, 1Second ·TO–3PN Package ·Complement to Type MJW21193 APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 40 ℃/W isc Website：www.iscsemi.com isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW21194 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 4.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V 2.2 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 200V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 8A ; VCE= 5V 20 hFE-2 DC Current Gain IC= 16A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IE= 1A ; VCE= 10V 4 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 80V,t= 1.0s,Nonrepetitive isc Website：www.iscsemi.com 2 250 UNIT 2.25 V MHz A isc & iscsemi is registered trademark