MSDT200 Three Phase Bridge + Thyristor VRRM / VDRM IFAV / ITAV 800 to 1600V 200Amp Features y y Circuit - + G y Blocking voltage:800 to 1600V Three Phase Bridge and a Thyristor Low Forward Voltage R2 Applications y y R S T y y Inverter for AC or DC motor control Current stablilzed power supply Switching power supply UL E243882 approved Module Type TYPE VRRM / VDRM VRSM MSDT200-08 MSDT200-12 MSDT200-16 800V 1200V 1600V 900V 1300V 1700V ◆Diode Maximum Ratings Symbol ID IFSM i2t Item Output Current(D.C.) Surge forward current Conditions Tc=96℃ Three phase full wave t=10mS Tvj =45℃ Circuit Fusing Consideration Visol Tvj Isolation Breakdown Voltage(R.M.S) Operating Junction Temperature Tstg Storage Temperature a.c.50HZ;r.m.s.;1min Values Units 200 A 1900 A 18050 A2s 3000 -40 to +150 V -40 to +125 ℃ To terminals(M4) 2±15% ℃ Nm Mt To terminals(M6) 5±15% Nm Ms To heatsink(M6) 5±15% 320 Nm Mt Mounting Torque Module（Approximately） Weight Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) Thermal Impedance, max. Conditions g Values Units Junction to Case(TOTAL) 0.12 ℃/W Case to Heat sink 0.06 ℃/W Values Units Electrical Characteristics Symbol Item Conditions VFM Forward Voltage Drop, max. T=25℃ IF =200A 1.35 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM ≤2 ≤10 mA mA Document Number: MSDT200 Jan.15,2015 www.smsemi.com 1 MSDT200 ◆Thyristor Maximum Ratings Symbol Item Conditions Values Units ITAV Average On-State Current Tc=93℃, Single Phase half wave 180o conduction 200 A ITSM Surge On-State Current TVJ=45℃ t=10ms (50Hz), sine VR=0 1900 A 18050 A2s 3000 V Operating Junction Temperature -40 to +125 Storage Temperature -40 to +125 i2t Visol Tvj Tstg Mt Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) Mounting Torque Mt Ms a.c.50HZ;r.m.s.;1 min To terminals(M4) 2±15% ℃ ℃ Nm To terminals(M6) To heatsink(M6) 5±15% 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/μs 200 A/μs dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/μs Electrical and Thermal Characteristics Symbol VTM IRRM/IDRM Item Conditions Values Min. Typ. Max. Units Peak On-State Voltage, max. T=25℃ IT =600A 1.80 V Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,VR=VRRM ,VD=VDRM 100 mA 0.85 V TVJ =25℃ , VD =6V 1.5 3 mΩ V VTO Threshold voltage rT VGT Slope resistance Gate Trigger Voltage, max. IGT TVJ =25℃ , VD =6V 150 mA VGD Gate Trigger Current, max. Max. required DC gate voltage not to trigger TVJ =125℃ , VD =2/3VDRM 0.25 V IGD Max. required DC gate current not to trigger TVJ =125℃ , VD =2/3VDRM 10 mA 1000 400 mA mA us us IL IH tgd tq Maximum latching current Maximum holding current TVJ=TVJM TVJ =25℃ , RG=33Ω 300 150 1 100 Gate controlled delay time Circuit commutated turn-off time TVJ =25℃ , VD =6V TVJ=25℃,IG=1A,diG/dt=1A/us TVJ = TVJM Rth(j-c) Thermal Impedance, max. Junction to Case 0.14 ℃/W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.06 ℃/W Document Number: MSDT200 Jan.15,2015 www.smsemi.com 2 MSDT200 Performance Curves 550 250 Three phase 500 Three phase A W 200 400 150 300 100 200 50 100 ID Pvtot 0 0 ID 40 80 120 160 A 0 200 0 Tc Fig1. Power dissipation 50 100 150 ℃ Fig2. Forward Current Derating Curve 0.20 2500 ℃/ W A 50HZ 2000 Zth(j-C) 1500 Per one element 0.10 1000 500 0 Single phase half wave Tj=25℃ start 0.001 t 0.01 0.1 1.0 10 0 S 100 1 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 1000 250 max. W A 200 150 100 100 50 IF Tj=25℃ PTAV 10 0.5 VF 1.0 1.5 2.0 V 0 2.5 Fig5. Forward Characteristics Document Number: MSDT200 Jan.15,2015 0 ID 40 80 120 160 A 200 Fig6. SCR Power dissipation www.smsemi.com 3 MSDT200 250 0.20 A ℃/ W 200 Zth(j-C) 150 0.10 100 50 ITAVM 0 0 0 Tc 50 100 ℃ 0.001 t 0.01 150 1.0 10 S 100 Fig8. SCR Transient thermal impedance Fig7. SCR Forward Current Derating Curve 1000 0.1 102 max. max. A V Av e 100 ra ge Pe ak G at e Po G w er at e Po we r (3 W ) (1 0W ) 100 -10℃ Peak Gate Current (3A) Peak Forward Gate Voltage (10V) 1 10 135℃ IT VG Tj=25℃ 10 0.5 VTM 1.0 1.5 2.0 V 2.5 0.1 Fig9. SCR Forward Characteristics Document Number: MSDT200 Jan.15,2015 25℃ 101 IG 102 Maximum Gate Non-Trigger Voltage 103 mA 104 Fig10. Gate trigger Characteristics www.smsemi.com 4 MSDT200 Package Outline Information CASE: M5 Dimensions in mm Document Number: MSDT200 Jan.15,2015 www.smsemi.com 5