ETL BC849B General purpose transistor Datasheet

General Purpose Transistors
NPN Silicon
BC846ALT1,BLT1
BC847ALT1,BLT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current(Peak value)
Emitter Current(Peak value)
Base Current(Peak value)
Symbol
V CEO
V CBO
V EBO
IC
I CM
I EM
I BM
BC846
65
80
6.0
100
200
200
200
BC847
BC850
45
50
6.0
100
200
200
200
BC848
BC849
30
30
5.0
100
200
200
200
Unit
V
V
V
mAdc
mAdc
mAdc
mAdc
SOLDERING CHARACTERISTICS
Characteristic
Solder Heat Resistance
Solderability
CLT1 thru
BC850BLT1,CLT1
3
1
2
CASE 318–08, STYLE 6
Symbol
265
Unit
°C
240 to 265
°C
SOT–23 (TO–236AB)
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR– 5 Board, (1)
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
RθJA
Total Device Dissipation
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature
TJ , Tstg
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
1
BASE
2
EMITTER
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
65
45
30
80
50
30
80
50
30
6.0
5.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector–Emitter Breakdown Voltage
BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector–Base Breakdown Voltage BC846A,B
(IC = 10 µA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Emitter–Base Breakdown Voltage
BC846A,B
BC847A,B,C
(IE = 1.0 µA)
BC848A,B,C, BC849B,C,
BC850B,C
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
v
v
v
nA
µA
M3–1/4
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
h FE
—
—
—
110
200
420
—
—
—
—
580
—
90
150
270
180
290
520
—
—
0.7
0.9
660
—
—
—
—
220
450
800
0.25
0.6
—
—
700
770
—
fT
100
—
—
MHz
Cobo
NF
—
—
4.5
pF
dB
—
—
—
—
10
4.0
ON CHARACTERISTICS
DC Current Gain
(I C = 10 µA, V CE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
(I C = 2.0 mA, V CE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
1.0
2.0
V CE = 10 V
T A = 25°C
1.5
1.0
0.8
0.6
0.4
0.8
V BE(sat) @ I C /I B=10
0.7
V BE(on) @ V CE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
V CE(sat) @ I C /I B = 10
0.1
0
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
T A = 25°C
1.6
I C= 200 mA
1.2
IC=
10 mA 20 mA
I C = 100 mA
I C = 50 mA
0.8
0.4
0
0.02
0.1
1.0
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mAdc)
2.0
IC=
0.1
200
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
VCE, COLLECTOR– EMITTER VOLTAGE (V)
T A = 25°C
0.9
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A
V CE = 5.0 Vdc, R S = 2.0 kΩ,BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
BC849B,C, BC850B,C
10
20
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
3.0
0.2
1.0
10
100
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
M3–2/4
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz)
BC847/BC848
10.0
T A = 25°C
7.0
C, CAPACITANCE(pF)
5.0
C ib
3.0
C ob
2.0
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
20
40
300
200
V CE = 10V
100
T A = 25°C
80
60
40
30
20
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
T A = 25°C
V CE = 5V
T A = 25°C
0.8
V BE(sat) @ I C /I B = 10
V, VOLTAGE (VOLTS)
2.0
1.0
0.5
0.2
0.1 0.2
1.0
10
50mA
100mA
200mA
IC =
10 mA
0.4
0.2
VCE(sat) @ I C /I B= 10
0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 8. “On” Voltage
1.2
0.05 0.1
0.2
I C , COLLECTOR CURRENT (mA)
1.6
0
0.02
0.4
Figure 7. DC Current Gain
T A= 25°C
0.8
VBE @ VCE = 5.0 V
I C , COLLECTOR CURRENT (mA)
2.0
20mA
0.6
0
100
θVB , TEMPERATURE COEFFICIENT (mV/°C)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
2.0
400
0.5
1.0 2.0
5.0
10
20
100 200
–1.0
–1.4
–1.8
θ VB for V BE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I B , BASE CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
M3–3/4
BC846ALT1, BLT1 BC847ALT1, BLT1 CLT1 thru BC850BLT1, CLT1
40
C, CAPACITANCE (pF)
T A= 25°C
20
C ib
10
6.0
4.0
C ob
2.0
0.1 0.2
0.5
1.0 2.0
5.0 10 20
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
50
100
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
BC846
500
V CE= 5 V
T A= 25°C
200
100
50
20
1.0
5.0 10
50 100
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
M3–4/4
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