LED DOT MATRIX BL-M12X591 Features: Ø 36.00mm (1.4”) 4.0x4.0 SQUARE dot matrix LED display. Ø Low current operation. Ø Excellent character appearance. Ø Easy mounting on P.C. Boards or sockets. Ø I.C. Compatible. Ø ROHS Compliance. Super Bright Electrical-optical characteristics: (Ta=25°C) (Test Condition: IF=20mA) Part No Row Cathode Column Anode Row Anode Column Cathode Emitted Color BL-M12A591S-XX BL-M12B591S-XX Hi Red Super Red Ultra Red Chip VF Unit:V Iv ？P (nm) Typ Max TYP.(mcd) GaAl As/GaAs,SH 660 1.85 2.20 105 GaAl As/GaAs,DH 660 1.85 2.20 115 GaAl As/GaAs,DDH 660 1.85 2.20 125 Material BL-M12A591D-XX BL-M12B591D-XX BL-M12A591UR-XX BL-M12B591UR-XX BL-M12A591E-XX BL-M12B591E-XX Orange GaAsP/GaP 635 2.10 2.50 95 BL-M12A591Y-XX BL-M12B591Y-XX Yellow GaAsP/GaP 585 2.10 2.50 95 BL-M12B591G-XX Green GaP/GaP 570 2.20 2.50 100 BL-M12A591G-XX Ultra Bright Electrical-optical characteristics: (Ta=25°C) (Test Condition: IF=20mA) Part No VF Unit:V Chip Row Cathode Column Anode Row Anode Column Cathode BL-M12A591UHR-XX BL-M12B591UHR-XX BL-M12A591UE-XX BL-M12A591YO-XX Emitted Color Iv Material ？Ｖ P (nm) Typ Max TYP.(mcd) Ultra Red AlGaInP 645 2.10 2.50 125 BL-M12B591UE-XX Ultra Orange AlGaInP 630 2.10 2.50 105 BL-M12B591YO-XX Ultra Amber AlGaInP 619 2.10 2.50 105 Ultra Yellow AlGaInP 590 2.10 2.50 BL-M12A591UY-XX BL-M12B591UY-XX BL-M12A591UG-XX BL-M12B591UG-XX Ultra Green AlGaInP 574 2.20 2.50 135 BL-M12A591PG-XX BL-M12B591PG-XX Ultra Pure Green InGaN 525 3.80 4.50 155 BL-M12A591B-XX BL-M12B591B-XX Ultra Blue InGaN 470 2.70 4.20 75 BL-M12A591W-XX BL-M12B591W-XX Ultra White InGaN / 2.70 4.20 105 ·-XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear 1 2 3 4 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused Absolute maximum ratings (Ta=25°C) APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 5 105 LED DOT MATRIX BL-M12X591 Parameter Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature T OPR S D UR E Y G Unit 25 60 5 25 60 5 25 60 5 25 60 5 25 60 5 30 65 5 mA mW V 150 150 150 150 150 150 mA -40 to +80 °C -40 to +85 °C Max.260±5°C for 3 sec Max. (1.6mm from the base of the epoxy bulb) °C Storage Temperature T STG Lead Soldering Temperature T SOL Absolute maximum ratings (Ta=25°C) Parameter UHR Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature T OPR Storage Temperature T STG Lead Soldering Temperature T SOL UE YO UY UG PG B W U nit mA 30 75 5 30 65 5 30 65 5 30 65 5 30 75 5 30 110 5 30 120 5 30 120 5 mW 150 150 150 150 150 150 100 100 mA V -40 to +80 -40 to +85 °C Ma x.260±5°C for 3 sec Max. (1.6mm from the base of the epoxy bulb) °C APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] °C LED DOT MATRIX BL-M12X591 Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M12X591 Typical electrical-optical characteristics curves: (A) 1.0 (B ) (C) ( D) (2) (3) (8) ( 4) (1) (6) ( 5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wav elength(nm) RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p ) (1) - GaAsP/GaAs 655nm/Red (9) - GaAlAs 880nm (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (6) - GaAlAs/GaAs 660nm/Super Red (D) - InGaAl/SiC 525nm/Ultra Green (8) - GaAsP/GaP 610nm/Super Red F O R W A R D C U R R E N T (m A ) 8 64 5 1 50 2 3 R E L A T IV E L U M IN O U S IN T E N S IT Y 40 30 20 10 0 1.2 1.6 2.0 2.4 2.6 3.0 4.0 F O R W A R D C U R R E N T (m A ) 3.0 2.0 5 B 1.0 0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE R E L A T IV 3 1 E 2 5 4 L 2 U M 1 3 IN O U 0.5 S IN T E N S 0.2 IT Y 0.1 -30 -20 50 1 40 60 80 40 30 20 1 6 2,4,8,A 3 5 10 0 100 20 3KHz 300KHz 1KHz 100KHz F-REFRESH R ATE 10 10KH z 9 8 7 6 5 ID C M A X . Ip e 4 a k M A 3 X . 2 -10 0 10 20 30 40 50 60 80 100 Ip e a k M A X . 30KHz 3 KHz 300Hz 100KHz 10KHz 1KHz 100H z 10 9 8 7 6 5 4 3 2 70 1 AMBIENT TEM PER ATUR E Ta(℃ ) 60 AMBIENT TEMPERATURE Ta( ℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE FORWARD CURRENT (mA) RELATIVE LUMI NOUS INTENSI TY VS. FORWARD CURRENT ID C M A X . 40 1 10 100 1000 tp-PU LSE DU RATION uS (1,2 ,3 ,4,6,8,B.D.J. K) 10,000 1 1 10 100 1000 tp-P ULSE DU RATION uS (5) NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 4 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000