DMT69M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V Features and Benefits RDS(ON) Max ID Max TA = +25°C 12mΩ @ VGS = 10V 9.8A 14mΩ @ VGS = 4.5V 8.4A 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Ensures On-State Losses Are Minimized Excellent QGD x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) making it ideal for high-efficiency power management applications. Power Management Functions DC-DC Converters Backlighting D SO-8 S D S D S D G D Top View Internal Schematic Top View G S Equivalent Circuit Ordering Information (Note 4) Part Number DMT69M8LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 T6009LS T69M8LS YY WW YY WW 1 4 DMT69M8LSS Document number: DS38325 Rev. 3 - 2 1 = Manufacturer’s Marking T6009LS & T69M8LS = Date Code Marking YY or YY = Year (ex: 17 = 2017) WW = Week (01 to 53) 4 1 of 7 www.diodes.com February 2017 © Diodes Incorporated DMT69M8LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 6) VGS = 10V t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±16 9.8 7.9 ID A 12.2 9.5 3 60 25 31.5 A A A mJ Value 1.25 100 55.5 1.6 75 42 12 -55 to +150 Unit W °C/W °C/W W °C/W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Unit V V IS IDM IAS EAS A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) VSD — 9.8 12 0.9 2 12 14 1.2 V Static Drain-Source On-Resistance 0.7 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.5A VGS = 0V, IS = 20A Ciss Coss Crss RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 1,925 438 41 1.7 33.5 15.6 4.7 5.3 4.5 8.6 35.9 15.7 18.2 — — — — — — — — — — — — — QRR — 33.1 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 13.5A ns VDD = 30V, VGS = 10V, RG = 6Ω, ID = 13.5A ns nC IF = 13.5A, di/dt = 400A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT69M8LSS Document number: DS38325 Rev. 3 - 2 2 of 7 www.diodes.com February 2017 © Diodes Incorporated DMT69M8LSS 30.0 30 VDS = 5V VGS = 10.0V 25 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 4.0V 20.0 VGS = 3.5V 15.0 VGS = 3.0V 10.0 5.0 15 125oC 150oC 25oC -55oC 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.0095 0.009 VGS = 4.5V 0.0085 0.008 0.0075 0.007 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.01 VGS = 10V 0.0065 0.006 2 0.06 0.04 ID = 13.5A 0.02 0 0 0.013 0.012 175oC 150oC 0.011 125oC 0.01 0.009 85oC 0.008 0.007 25oC 0.006 -55oC 0.005 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V 4 0.08 6 0.014 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.1 10 14 18 22 26 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85oC 10 5 VGS = 2.5V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 20 1.8 1.6 VGS = 4.5V, ID = 11.5A 1.4 1.2 1 VGS = 10V, ID = 13.5A 0.8 0.6 0.004 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT69M8LSS Document number: DS38325 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Junction Temperature February 2017 © Diodes Incorporated 0.02 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT69M8LSS 0.016 VGS = 4.5V, ID = 11.5A 0.012 0.008 VGS = 10V, ID = 13.5A 0.004 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 1.6 ID = 1mA 1.2 ID = 250µA 0.8 0.4 -50 150 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 10000 CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 20 TJ = 125oC 15 10 TJ = 85oC TJ = 25oC TJ = 150oC 5 TJ = -55oC f = 1MHz Ciss 1000 Coss 100 Crss 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.5 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 100 10 PW =100µs RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 150 Figure 8. Gate Threshold Variation vs. Junction Temperature 30 IS, SOURCE CURRENT (A) 2 6 4 VDS = 30V, ID = 13.5A 10 PW =1ms 1 PW =10ms PW =100ms PW =1s 0.1 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V 2 0 PW =10s DC 0.01 0 7 14 21 Qg (nC) Figure 11. Gate Charge DMT69M8LSS Document number: DS38325 Rev. 3 - 2 28 35 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com February 2017 © Diodes Incorporated DMT69M8LSS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 98℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 DMT69M8LSS Document number: DS38325 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 February 2017 © Diodes Incorporated DMT69M8LSS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 E 1 b E1 h es) id All s 9° ( A R 0. 1 e 45° 7° Q c 4° ± 3° A1 E0 L Gauge Plane Seating Plane Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMT69M8LSS Document number: DS38325 Rev. 3 - 2 X 6 of 7 www.diodes.com February 2017 © Diodes Incorporated DMT69M8LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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