FLM7785-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM7785-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Symbol Rating Unit Drain-Source Voltage Item VDS 15 V Gate-Source Voltage VGS -5 V W Total Power Dissipation PT 115 Storage Temperature Tstg -65 to +175 Channel Temperature O 175 Tch C O C RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25OC) Item Symbol DC Input Voltage Condition VDS Forward Gate Current IGF RG=10Ω Reverse Gate Current IGR RG=10Ω Limit Unit ≤10 V ≤52 ≥-23.2 mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC) Item Limit Typ. 24 Max. - Unit VDS=5V, VGS=0V Min. - VDS=5V, IDS=8.0A - 16 - S -1.5 -3.0 V Test Conditions Symbol A Drain Current IDSS Transconductance gm Pinch-off Voltage Vp VDS=5V, IDS=960mA -0.5 Gate-Source Breakdown Voltage VGSO IGS=-960uA -5.0 - - V Output Power at 1dB G.C.P. P1dB 46.0 46.5 - dBm Power Gain at 1dB G.C.P. G1dB 6.0 7.0 - dB - 11 13 A - 32.5 - % dB Idsr Drain Current Power-added Efficiency ηadd Gain Flatness ∆G Thermal Resistance Rth Channel Temperature Rise ∆Tch VDS=10V f=7.7 - 8.5 GHz IDS(DC)=8.0A(typ.) Zs=ZL=50Ω - - 1.6 Channel to Case - 1.1 1.3 10V x Ids(DC) x Rth - - 100 CASE STYLE: IK ESD C/W O C G.C.P.:Gain Compression Point Class III 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.3 September 2004 O 1 FLM7785-45F C-Band Internally Matched FET 50 120 48 120 46 100 Output Power (dBm) Total Power Dissipation (W) VDS=10V, IDS(DC)=8.0A, f=8.1GHz 140 100 80 60 40 44 60 40 40 38 0 36 50 100 150 Case Temperature ( OC) 80 Pout 42 20 0 140 200 20 P.A.E 0 28 30 32 34 36 38 40 Input Power (dBm) 42 IMD vs Output Power VDS=10V, IDS(DC)=8.0A f1=8.50GHz, f2=8.51GHz Output Power vs. Frequency VDS=10V,IDS(DC)=8A Pin=40dBm 46 P1dB Pin=38dBm 44 42 Pin=34dBm 40 38 Pin=30dBm 36 7.5 7.7 7.9 8.1 8.3 8.5 IMD(dBc) Output Power (dBm) 48 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 IM3 IM5 26 8.7 Frequency (GHz) 2 28 30 32 34 36 38 Output Power (dBm) S.C.L : Single Carrier Level 40 Power Added Efficiency (%) Output Power & P.A.E vs. Input Power Power Derating Curve FLM7785-45F C-Band Internally Matched FET ■ S-PARAMETER +90° +50j +100j +25j +250j 8 .5 G H z +10j 8 .5 G H z 8 .1 G H z 0 8 .1 G H z ±180° 6 65 ∞ Scale for |S21| 2 7.7GHz 8.5GHz 8.5GHz -250j 25 10Ω -25j -100j S 11 -50j S 22 8.1GHz 0.3 -90° S 12 S 21 VDS=10V, IDS(DC)=8.0A Freq [GHz] 7.5 7.6 7.7 7.8 7.9 8.0 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 S11 MAG 0.59 0.54 0.49 0.44 0.36 0.31 0.26 0.21 0.19 0.18 0.17 0.16 0.15 0.12 S21 ANG -92.42 -115.60 -132.70 -150.94 -175.21 166.47 145.07 122.80 104.80 87.15 66.26 47.84 30.74 8.33 MAG 2.42 2.50 2.53 2.55 2.58 2.59 2.57 2.56 2.55 2.55 2.54 2.55 2.55 2.53 S12 ANG 37.25 18.21 3.25 -12.24 -34.31 -51.85 -73.91 -99.42 -121.60 -143.52 -168.78 169.26 149.06 119.25 3 MAG 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0° 8.1GHz Scale for |S12| 7 .7 G H z -10j 7 .7 G H z 7.7GHz S22 ANG 87.74 55.84 31.40 6.43 -27.13 -52.27 -80.04 -110.35 -134.88 -159.01 171.71 145.16 121.06 88.15 MAG 0.55 0.50 0.47 0.44 0.42 0.42 0.41 0.41 0.41 0.40 0.39 0.38 0.36 0.32 ANG -83.48 -102.39 -118.61 -136.88 -161.09 -178.81 161.62 143.05 129.89 118.61 106.72 96.08 87.58 77.86 FLM7785-45F C-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM7785-45F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5