Anpec APM3023NFC-TR N-channel enhancement mode mosfet Datasheet

APM3023N
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V
RDS(ON)=22mΩ(typ.) @ VGS=5V
•
•
•
Super High Dense Cell Design
1
2
3
G
D
S
High Power and Current Handling Capability
TO-252.TO-220 and SOT-223 Packages
•
•
Switching Regulators
2
3
G
D
S
Top View of SOT-223
Top View of TO-252
Applications
1
3
S
2
D
1
G
Switching Converters
TO-220 Package
Ordering and Marking Information
A P M 3 023 N
Package C ode
U : T O -2 5 2
V : S O T -2 2 3
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TR : Tape & R eel
H a n d lin g C o d e
Tem p. R ange
Package C ode
A P M 3 0 2 3 N U /F :
:
AP M 3023N
XXXXX
AP M 3023N V :
AP M 3023N
XXXXX
XXXXX
- D a te C o d e
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
F : T O -2 2 0
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID*
Maximum Drain Current – Continuous
30
IDM
Maximum Drain Current – Pulsed
70
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
1
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APM3023N
Absolute Maximum Ratings (Cont.)
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
TO-252/TO-220
62.5
SOT-223
3
TO-252/TO220
25
SOT-223
1.2
TA=25°C
PD
Maximum Power Dissipation
W
TA=100°C
TJ
W
Maximum Junction Temperature
TSTG
Storage Temperature Range
Electrical Characteristics
Symbol
Parameter
Unit
150
°C
-55 to 150
°C
(TA = 25°C unless otherwise noted)
Test Condition
APM3023N
Min.
Typ.
Max.
Unit
Static
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th)
Gate Threshold Voltage
IGSS
Gate Leakage Current
Drain-Source On-state
RDS(ON)a
Resistance
Diode Forward Voltage
VSDa
VGS=0V , IDS=250µA
30
V
VDS=24V , VGS=0V
1
VDS=24V, VGS=0V, Tj= 55°C
VDS=VGS , IDS=250µA
5
µA
1.5
2
V
VGS=±20V , VDS=0V
VGS=10V , IDS=20A
nA
15
±100
20
VGS=5V , IDSs=10A
22
28
ISD=15A , VGS=0V
0.7
1.3
VDS=15V , IDS= 10A
15
20
VGS=5V ,
5.8
1
mΩ
V
b
Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
11
18
Tr
Turn-on Rise Time
VDD=15V , IDS=2A ,
17
26
td(OFF)
Turn-off Delay Time
VGEN=10V , RG=6Ω
37
54
20
30
Tf
Turn-off Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Notes
a
b
nC
3.8
VGS=0V
ns
1200
VDS=15V
Reverse Transfer Capacitance Frequency=1.0MHz
220
pF
100
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
2
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APM3023N
Typical Characteristics
Output Characteristics
Transfer Characteristics
40
30
VDS=10V
25
IDS-Drain Current (A)
IDS-Drain Current (A)
VGS=5,6,7,8,9,10V
20
VGS=4V
15
10
30
20
TJ=25°C
10
TJ=125°C
TJ=-55°C
5
VGS=3V
0
0
2
4
6
8
0
1.0
10
VDS-Drain-to-Source Voltage (V)
1.5
3.0
3.5
4.0
On-Resistance vs. Drain Current
0.040
IDS=250µA
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
2.5
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
2.0
1.0
0.8
0.6
0.035
VGS=5V
0.030
0.025
0.020
VGS=10V
0.015
0.010
0.005
0.
4 -50 -25
0
25
50
75
0.000
0
100 125 150
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
5
10
15
20
25
30
IDS-Drain Current (A)
3
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APM3023N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
45
1.6
RDS(ON)-On-Resistance (Ω)
(Normalized)
40
RDS (ON)-On-Resistance (Ω)
V GS=10V
ID=12A
IDS=20A
35
30
25
20
15
10
1.4
1.2
1.0
0.8
5
0
3
4
5
6
7
8
9
0.6
-50
10
-25
Gate Voltage (V)
25
50
75
10 0 12 5 15 0
Tj-Junction Temperature (°C)
Capacitance Characteristics
Gate Charge
2000
10
Ciss
VDS=15V
IDS=10A
8
C-Capacitance (pF)
VGS-Gate-to-Source Voltage (V)
0
6
4
2
1000
Coss
500
Crss
100
Frequency=1MHz
0
0
5
10
15
20
25
30
0.1
10
30
VDS-Drain-to-Source Voltage (V)
QG-Total Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
1
4
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APM3023N
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
TO-252 / TO-220
3000
2500
10
TJ=-55°C
TJ=125°C
1
Power (W)
ISD-Source Current (A)
100
0.0
0.2
0.4
0.6
1500
1000
500
TJ=25°C
0.1
2000
0.8
1.0
1.2
0
-5
10
1.4
VSD-Source to Drain Voltage
-4
10
-3
10
-2
10
-1
10
0
10
1
10
Time (sec)
Single Pulse Power
SOT-223
3000
Power (W)
2500
2000
1500
1000
500
0
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
Time (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
5
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APM3023N
Typical Characteristics (Cont.)
Normalized Thermal Transient Impedence, Junction to Ambient
TO-252 / TO-220
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01
-5
10
-4
-3
10
-2
10
-1
10
0
10
1
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
SOT-223
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=42°C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
10
10
-1
10
0
10
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
6
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APM3023N
Package Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
0. 0 20
7
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APM3023N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
A
B1
a
c
H
E
L
K
e
A1
e1
b
B
Dim
A
A1
B
B1
c
D
E
e
e1
H
L
K
α
β
Millimeters
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Inches
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
2.3 BSC
4.6 BSC
6.70
0.91
1.50
0°
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
0.09 BSC
0.18 BSC
7.30
1.10
2.00
10°
0.26
0.04
0.06
0°
13°
0.29
0.04
0.08
10°
13°
8
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APM3023N
TO-220 ( Reference JEDEC Registration TO-220)
D
R
Q
b
E
e
b1
e1
L1
L
H1
A
c
F
Millimeters
Dim
A
b1
b
c
D
e
e1
E
F
H1
J1
L
L1
R
Q
Min.
3.56
1.14
0.51
0.31
14.23
2.29
4.83
9.65
0.51
5.84
2.03
12.7
3.65
3.53
2.54
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
J1
Inches
Max.
4.83
1.78
1.14
1.14
16.51
2.79
5.33
10.67
1.40
6.86
2.92
14.73
6.35
4.09
3.43
9
Min.
0.140
0.045
0.020
0.012
0.560
0.090
0.190
0.380
0.020
0.230
0.080
0.500
0.143
0.139
0.100
Max.
0.190
0.070
0.045
0.045
0.650
0.110
0.210
0.420
0.055
0.270
0.115
0.580
0.250
0.161
0.135
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APM3023N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
10
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM3023N
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
B
T1
Application
TO-252
A
B
C
330 ±3
100 ± 2
13 ± 0. 5
F
D
D1
J
T1
T2
16.4
+
0.3
2 ± 0.5
-0.2 2.5± 0.5
Po
P1
Ao
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
Bo
Ko
t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
Application
SOT-223
A
B
J
T1
T2
W
P
E
62±1.5
C
12.75±
0.15
330±1
2 ± 0.6
12.4 +0.2
2± 0.2
12 ± 0.3
8 ± 0.1
1.75± 0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 ± 0.05 1.5+ 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1
11
2.1± 0.1 0.3±0.05
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APM3023N
Cover Tape Dimensions
Application
TO- 252
SOT- 223
Carrier Width
16
12
Cover Tape Width
13.3
9.3
Devices Per Reel
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.6 - July., 2003
12
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