UTC BT151G-8-TA3-T Scr Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BT151
SCR
SCRS
„
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage capability
and high thermal cycling performance. Typical applications include
motor control, industrial and domestic lighting, heating and static
switching.
„
SYMBOL
1
TO-220
1
TO-252
„
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
BT151L-5-TA3-T
BT151G-5-TA3-T
BT151L-5-TN3-R
BT151G-5-TN3-R
BT151L-6-TA3-T
BT151G-6-TA3-T
BT151L-6-TN3-R
BT151G-6-TN3-R
BT151L-8-TA3-T
BT151G-8-TA3-T
BT151L-8-TN3-R
BT151G-8-TN3-R
Note: Pin assignment: K: CATHODE
A: ANODE
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Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-220
TO-252
TO-220
TO-252
TO-220
TO-252
G: GATE
Pin Assignment
1
2
3
K
A
G
K
A
G
K
A
G
K
A
G
K
A
G
K
A
G
Packing
Tube
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
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QW-R301-017,C
BT151
„
SCR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
BT151-5
500 (Note 1)
V
Repetitive Peak Off-State Voltages
VDRM, VRRM
BT151-6
650 (Note 1)
800
BT151-8
Average On-State Current (half sine wave; Tmb ≤109°C)
IT(AV)
7.5
A
RMS on-State Current (all conduction angles)
IT(RMS)
12
A
Non-Repetitive Peak On-State Current
t = 10 ms
100
A
ITSM
(half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms
110
I2t for Fusing (t = 10 ms)
I2t
50
A2s
Repetitive Rate of Rise of On-State Current After Triggering
dIT /dt
50
A/μs
(ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs)
Peak Gate Current
IGM
2
A
Peak Gate Voltage
VGM
5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Gate Power
PGM
5
W
Average Gate Power (Over any 20 ms period)
PG(AV)
0.5
W
Storage Temperature
Tstg
-40 ~150
°C
Operating Junction Temperature
TJ
125
°C
Note: 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor
may switch to the on-state. The rate of rise of current should not exceed 15A/μs.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Mounting Base
Junction to Ambient
„
SYMBOL
θJMb
θJA
UNIT
K/W
K/W
STATIC CHARACTERISTICS (TJ=25℃,unless otherwise stated)
PARAMETER
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
SYMBOL
IGT
IL
IH
VT
Gate Trigger Voltage
VGT
Off-State Leakage Current
„
RATINGS
1.3
60
I D , IR
CONDITIONS
VD = 12 V, IT = 0.1 A
VD = 12 V, IGT = 0.1 A
VD = 12 V, IGT = 0.1 A
IT = 23 A
VD = 12 V, IT = 0.1 A
VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C
VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C
MIN
0.25
TYP
2
10
7
1.4
0.6
0.4
0.1
MAX
15
40
20
1.75
1.5
UNIT
mA
mA
mA
V
0.5
mA
V
DYNAMIC CHARACTERISTICS(TJ=25℃,unless otherwise stated)
PARAMETER
Critical Rate of Rise of
Off-State Voltage
Gate Controlled Turn-on
Time
Circuit Commutated
Turn-off tIme
SYMBOL
CONDITIONS
VDM = 67% VDRM(max),
Gate open circuit
dVD /dt TJ = 125 °C,
exponential waveform; RGK = 100Ω
ITM = 40 A, VD = VDRM(max), IG = 0.1 A,
tGT
dIG /dt = 5 A/μs
VD = 67% VDRM(max), TJ = 125°C;
tQ
ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs,
dVD /dt = 50 V/μs, RGK = 100 Ω
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
50
130
200
1000
MAX UNIT
V/μs
2
μs
70
μs
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QW-R301-017,C
BT151
„
SCR
TYPICAL CHARACTERISTICS
Fig 1. Maximum On-State Dissipation,
ptot, Versus Average On-State Current,
IT(AV), Where a=form factor=IT(RMS)/IT(AV)
15
Fig 2. Maximum Permissible Non-Repetitive Peak
On-State Current ITSM,Versus Pulse Width tp, for
Sinusoidal Currents, tp ≤ 10ms
Tmb(max)/°C
ITSM/A
105.5 1000
Ptot/W
Conduction form
angle
factor
degrees
a
4
30
2.8
60
10
2.2
90
1.9
120
1.57
180
2.2
1.9
α=1.57
112
2.8
dIT/dt limit
100
4
118.5
α
0
ITSM
IT
5
0
1
2
3
4 5
IT(AV)/A
6
T
7 8
125
time
TJ initial=25°C max
10
10µs
100µs
1ms
10ms
T/s
Fig 3. Maximum Permissible Rms Current
lT(RMS), Versus Mounting Base
Temperature Tmb
IT(RMS)/A
15
109°C
10
Fig 4. Maximum Permissible Non-Repetitive
Peak On-State Current ITSM,Versus Number Of
Cycles,For Sinusoidal Currents, f=50HZ
ITSM/A
120
ITSM
IT
100
T
time
80
TJ initial=25°C max
60
5
40
20
0
-50
0
50
100
Tmb/°C
150
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0
1
10
100
1000
Number Of Half Cycles At 50Hz
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QW-R301-017,C
BT151
„
SCR
TYPICAL CHARACTERISTICS (Cont.)
Fig 8. Normalised Latching Current
IL(TJ)/IL(25°C),
Versus Junction Temperature TJ
IL(TJ)
IL(25°C)
3
Fig 7. Normalised Gate Trigger Current IGT(TJ)/
IGT(25°C), Versus Junction Temperature TJ
IGT(TJ)
IGT(25°C)
3
2.5
2.5
2
2
1.5
1.5
1
1
0.5
0.5
0
-50
0
50
TJ/°C
100
0
-50
150
Fig 9. Normalised Holding Current IH(TJ)/IH(25
Versus Junction Temperature TJ
3
0
50
TJ/°C
100
150
),
IH(TJ)
IH(25°C)
Fig 10. Typical and Maximum On-State
Characteristic
/A
I
T
30
TJ=125°C
25 TJ=25°C
2.5
2
20
1.5
15
1
10
0.5
5
0
-50
0
50
TJ/°C
100
150
Fig 11.Transient Thermal Impedance Zthj-mb,
Versus Pulse Width tp
Zth j-mb(K/W)
10
1
0
typ
0
0.5
1
VT/V
2
RGK=100Ω
0.1
tp
1.5
Fig 12. Typical, Critical Rate Of Rise
Of Off-State Voltage, dVD/dt Versus
Junction Temperature TJ
dVD/dt(V/µs)
10000
1000
PD
max
100
0.01
t
0.001
10us 0.1ms 1ms 10ms 0.1s 1s
gate open circuit
10s
tp/s
UNISONIC TECHNOLOGIES CO., LTD
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10
0
50
100
150
TJ/°C
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QW-R301-017,C
BT151
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R301-017,C
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