RoHS BB910 VHF VARIABLE CAPACITANCE DIODES FEATURES Excellent Iinearity D T ,. L O SOD-123 Matched to 2.5% 0.022 0.0004¡± （0.55 0.1） C28:2.5:ratio:16 0.6 +0.2 Low series resistance -0.1 0.004¡± +0.008¡± -0.004¡± APPLICATIONS +0.2 （2.7 -0.1 ） 0.108¡±+0.008¡± -0.004¡± Electronic tuning in VHF televsion tunors, band B up 0.006（ ¡± 0.15） MAX IC DESCRIPTION N The BB910 is a variable capacitance drode, fabricated in planar technology. Bb910 R T LIMITING VALUES Symbol C E L Continuous Reverse Voltage O Forward Continuous Current at T A =25 C Junction Temperature Storage Temperature Range C （3.3 0.2） 0.132¡± +0.008¡± 0.012¡± （0.3） to 460 Mhz O 1.1 +0.2 -0.1 0.044+0.2 ¡± -0.1 0.004¡± （0.1） 0.010¡± （0.25） MIN Dimensions in inches and (millimeters) Min. Units Max. VR 30 V IF 20 mA Tj -55 +100 T stg -55 +150 O O C C ELECTRICAL CHARACTERISTICS J E Reverse current E Diode serles resistance Diode capacitance W Capacitance ratlo Capacitance matching Symbol IR Conditions Min. V R =28V; see Fig.2 o V R =28V; Tj=85 C see Fig.2 RD Cd C d(0.5v) C d(28v) Cd Cd F=100MHz; note1 38 V R =28V; f=1MHz see Fig.1 and 3 2.3 V R =0.5V to 28V Max. Units 10 nA 200 nA 1 V R =0.5V; f=1MHz see Fig.1 and 3 F=1MHz Typ. pF 2.7 pF 2.5 % 14 NOTE: 1.VR is the value at which Cd=40pF WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BB910 RATINGS AND CHARACTERISTIC CURVES FlG1:Diode capacltance as a function of reverse voltage;typical values 50 Cd (pF) 40 30 20 IC 10 0 10 N 10 1 -1 O o F=1MHz; Tj=25 C R T C E L FlG2:Reverse current as a function of junction femperature; maximum values 3 10 IR (nA) J E 10 W 2 C V R (V) 10 2 FlG3:Temperature coefficlent of diode capacitance as a function of reverse voltage:typical values 10 E D T ,. L O -3 TC d (K 1 ) 10 -4 10 -5 10 0 50 o Tj=( C) 100 10 -1 1 10 V R (V) o Tj=0 to 85 C WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 10 2