Freescale MRF6S19100N Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S19100N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S19100NR1
MRF6S19100NBR1
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA,
Pout = 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
287
1.64
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
RθJC
0.61
0.65
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
—
0.24
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.2 Adc)
gfs
—
5.3
—
S
Crss
—
1.5
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
IM3
- 47
- 37
- 35
dBc
ACPR
- 60
- 51
- 48
dBc
IRL
—
- 12
- 10
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S19100NR1 MRF6S19100NBR1
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
VSUPPLY
+
R2
C1
C2
C3
C4
Z5
C5
C6
Z12
RF
INPUT
R3
Z1
Z2
Z3
Z6
Z7
Z8
Z9
Z4
Z10
RF
OUTPUT
C8
Z11
C7
DUT
VSUPPLY
C9
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″ x 0.084″ Microstrip
0.818″ x 0.084″ Microstrip
0.165″ x 0.386″ Microstrip
0.505″ x 0.800″ Microstrip
0.323″ x 0.040″ Microstrip
0.160″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
C10
C11
0.319″ x 0.880″ Microstrip
0.355″ x 0.215″ Microstrip
0.661″ x 0.084″ Microstrip
1.328″ x 0.120″ Microstrip
Arlon AD250, 0.030″, εr = 2.5
Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
C1
10 μF, 35 V Tantalum Capacitor
C2
100 nF Chip Capacitor (1206)
C3, C7
C4, C8, C9
Part Number
Manufacturer
T491D106K035AS
Kemet
5.1 pF 600B Chip Capacitors
600B5R1BT250XT
ATC
9.1 pF 600B Chip Capacitors
600B9R1BT250XT
ATC
C5, C6, C10, C11
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 kΩ, 1/4 W Chip Resistor (1206)
R2
10 kΩ, 1/4 W Chip Resistor (1206)
R3
10 Ω, 1/4 W Chip Resistor (1206)
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
3
R2 C2
C3
C4
R1
C5
R3
CUT OUT AREA
C1
C7
C6
C8
C10 C11
MRF6S19100N/NB, Rev. 5
C9
Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout
MRF6S19100NR1 MRF6S19100NBR1
4
RF Device Data
Freescale Semiconductor
15.7
26.5
ηD
26
Gps, POWER GAIN (dB)
15.6
25.5
15.5
Gps
15.4
15.3
15.2
15.1
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 950 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IM3
−30
−36
−42
IRL
15
14.9
25
−48
−54
ACPR
−60
14.8
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
−12
−16
−20
−24
−28
−32
−36
IRL, INPUT RETURN LOSS (dB)
27
IM3 (dBc), ACPR (dBc)
15.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
15.3
35.5
ηD
Gps, POWER GAIN (dB)
15.2
15.1
Gps
15
14.9
14.8
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 950 mA, 2−Carrier N−CDMA
35
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
34
−25
−30
IM3
14.7
−35
IRL
14.6
14.5
34.5
−40
−45
ACPR
−50
14.4
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
−10
−15
−20
−25
−30
−35
−40
IRL, INPUT RETURN LOSS (dB)
36
IM3 (dBc), ACPR (dBc)
15.4
ηD, DRAIN
EFFICIENCY (%)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg.
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
Gps, POWER GAIN (dB)
−10
IDQ = 1425 mA
1190 mA
950 mA
15
710 mA
14
475 mA
13
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
12
11
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
1425 mA
−30
IDQ = 475 mA
−40
−50
1190 mA
950 mA
710 mA
−60
10
1
100
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
59
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−30
Ideal
57
Pout, OUTPUT POWER (dBm)
−20
3rd Order
−40
5th Order
−50
P3dB = 52.156 dBm (164.29 W)
55
P1dB = 51.13 dBm (129.72 W)
53
Actual
51
49
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
47
7th Order
−60
0.1
45
1
100
10
32
30
34
36
38
40
42
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
50
40
30
VDD = 28 Vdc, IDQ = 950 mA
TC = 85_C
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
IM3
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
−20
−30_C
85_C −30
25_C
−30_C
−40
ηD
20
ACPR
Gps
−50
−30_C
85_C
10
25_C
−60
−70
200
0
1
10
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
Gps
TC = −30_C
16
25_C
15
85_C
25_C
85_C
12
60
15
50
40
30
14
13
16
ηD
VDD = 28 Vdc
IDQ = 950 mA
f = 1960 MHz
20
10
11
1
10
100
0
300
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
17
−30_C
70
ηD, DRAIN EFFICIENCY (%)
18
14
13
12
16 V
11
24 V
20 V
32 V
28 V
VDD = 12 V
IDQ = 950 mA
f = 1960 MHz
10
0
50
100
150
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
200
MRF6S19100NR1 MRF6S19100NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
0
100
1.2288 MHz
Channel BW
−10
−20
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
Zload
f = 1990 MHz
f = 1930 MHz
f = 1930 MHz
f = 1990 MHz
Zsource
VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
2.51 - j4.80
1.74 - j3.11
1960
2.31 - j4.54
1.67 - j2.85
1990
2.12 - j4.20
1.63 - j2.55
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19100NR1 MRF6S19100NBR1
8
RF Device Data
Freescale Semiconductor
NOTES
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S19100NR1 MRF6S19100NBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
aaa
b1
C A
M
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6S19100NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF6S19100NR1 MRF6S19100NBR1
12
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S19100NR1 MRF6S19100NBR1
14
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
15
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MRF6S19100NR1 MRF6S19100NBR1
Document Number: MRF6S19100N
Rev. 1, 5/2006
16
RF Device Data
Freescale Semiconductor