The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications. MODE Class AB η FREQUENCY VDD IDQ Power GAIN (MHz) (V) (mA) (W) (dB) (%) (dB) IRL 1400 50 100 120 20 45 -8 VSWR 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 200µs and pulse period = 2ms. DESCRIPTION The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV1214-100 Demo Kit Part Number: HVV1214-100-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS06A 12/11/08 1 HVV1214-100 HighThe Voltage, High Ruggedness innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor HVV1214-100 High Voltage, High Ruggedness 1200-1400 MHz, 200µs Pulse, 10% Duty High Voltage, High Ruggedness HVV1214-100 L-Band Radar Pulsed Power Transistor For GroundMHz, Based Radar Applications 1200-1400 200µs Pulse, 10% Radar Duty Pulsed Power Transistor L-Band For Ground Based Radar Applications 1200-1400 MHz, 200μs Pulse, 10% Duty TM For Ground Based Radar Applications TheThe innovative Semiconductor Company! innovative Semiconductor Company! ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol BR(DSS) V IDSS IGSS 1 GP 1 IRL ηD1 2 VGS(Q) VTH PULSE Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Gate Quiescent Voltage Threshold Voltage Conditions Min VGS=0V,ID=5mA 95 VGS=0V,VDS=50V VGS=5V,VDS=0V F=1400MHz 18 F=1400MHz F=1400MHz 43 VDD=50V,IDQ=100mA 1.1 VDD=5V, ID=300µA 0.7 CHARACTERISTICS PULSE CHARACTERISTICS Pulse CHARACTERISTICS THERMAL PERFORMANCE Thermal PERFORMANCE RUGGEDNESS PERFORMANCE Typical Max 102 200 50 1 5 20 -8 -5 45 1.45 1.8 1.2 1.7 Unit V µA μA dB dB % V V Min Typical Max - - - <25 50 <15 50 0.35 0.5 Unit nS nS dB RUGGEDNESS PERFORMANCE The HVV1214-100 device is capable of withstanding an output load mismatch to a 20:1 VSWR corresponding at rated output power and nominal operating voltage across the frequency band of operation. 1 NOTE: : All parameters measured under pulsed conditions at 120W output power measured at the 1.)point NOTE: Allpulse parameters measured under pulsed conditions 120W output 5% of the with pulse width = 200µsec, duty cycle = 10% andat VDD = 50V, IDQ =power 100mA in a measured at the 5% of the pulse with pulse width = 200µsec, duty cycle = 10% broadband testpoint fixture. 1.) NOTE:matched All parameters measured under pulsed conditions at 120W output power 2 and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. NOTE: Amount required to attain quiescent current. duty cycle = 10% measured at of thegate 5%voltage point of the pulse withnominal pulse width = 200µsec, 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. HVVi Inc.Inc. HVViSemiconductors, Semiconductors, 10235 S. 51st St. Suite 100 10235 S. 51st St. SuiteInc. 100 HVVi Semiconductors, Phoenix, Az.st 85044 Phoenix, 10235 S. 51AZ. St.85044 Suite 100 Phoenix, Az. 85044 ISO 9001:2000Certified Certified ISO 9001:2000 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Tel: (866) 429-HVVi (4884) or Certified visit www.hvvi.com ISO 9001:2000 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, All Rights Reserved. Tel: (866) 429-HVVi (4884)Inc. or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. RUGGEDNESS PERFORMANCE Symbol Parameter Conditions Rise Time F=1400MHz T r1 1 Fall Time F=1400MHz T f PD1 Pulse Droop F=1400MHz THERMAL PERFORMANCE EG-01-DS06A EG-01-DS06A 12/12/08 12/11/08 EG-01-DS06A 2 2 12/12/08 2 The innovative Semiconductor Company! HVV1214-100 High Voltage,HVV1214-100 High Ruggedness High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse,1200-1400 10% DutyMHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications For Ground Based Radar Applications TM The innovative Semiconductor Company! Zo = 10 ZIN* ZOUT* 1200MHz 1200MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000Inc. Certified © 2008 HVVi Semiconductors, All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS06A 12/12/08 EG-01-DS06A 3 12/11/08 3 HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! For Ground Based Radar Applications HVV1214-100 High Voltage, High Ruggedness HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty 1200-1400 MHz, 200µs Pulse, 10% Duty For Ground Based Radar Applications For Ground Based Radar Applications TM The innovative Semiconductor Company! Demonstration Board Outline Demonstration Board Outline Demonstration Circuit Board Picture Demonstration Circuit Board Picture Board Board Outline available online Demonstration Circuit Board Picture (AutoCAD Files forDemonstration Demonstration at www.hvvi.com/products) (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1214-100 Demonstration Circuit Board Bill of Materials HVV1214-100 Demonstration Circuit Board Bill of Materials Circuit Board Bill of Materials HVVi Semiconductors, Inc.HVV1214-100 Demonstration ISO 9001:2000 Certified 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com EG-01-DS06A 12/12/08 4 EG-01-DS06A 12/11/08 4 EG-01-DS06A 12/12/08 The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor TM HVV1214-100 High Voltage,1200-1400 High Ruggedness MHz, 200μs Pulse, 10% Duty L-Band Radar Pulsed Power For Transistor Ground Based Radar Applications 1200-1400 MHz, 200µs Pulse, 10% Duty For Ground Based Radar Applications PACKAGE DIMENSIONS The innovative Semiconductor Company! PACKAGE DIMENSIONS DRAIN GATE SOURCE Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, ISO 9001:2000 Certified EG-01-DS06A HVVi Semiconductors, Inc. Inc. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/11/08 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 5 EG-01-DS06A 12/12/08