SPICE MODEL: IMX8 IMX8 Lead-free Green DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (IMT4) Small Surface Mount Package B2 Lead Free/RoHS Compliant (Note 3) · · · · · · · B1 E1 "Green" Device, Note 4 and 5 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 B C C2 Mechanical Data · · SOT-26 A E2 C1 F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 Terminal Connections: See Diagram L 0.35 0.55 0.40 Terminals: Solderable per MIL-STD-202, Method 208 M 0.10 0.20 0.15 a 0° 8° ¾ Case: SOT-26 H Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification 94V-0 K M J Moisture Sensitivity: Level 1 per J-STD-020C D B2 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). B1 F L E1 All Dimensions in mm Marking (See Page 2): KX8 Ordering & Date Code Information: See Page 2 C2 Weight: 0.016 grams (approximate) Maximum Ratings E2 C1 @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 50 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 120 ¾ ¾ V IC = 50mA Collector-Emitter Breakdown Voltage V(BR)CEO 120 ¾ ¾ V IC = 1.0mA Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ¾ ¾ V IE = 50mA Collector Cutoff Current ICBO ¾ ¾ 0.5 mA VCB = 100V Emitter Cutoff Current IEBO ¾ ¾ 0.5 mA VEB = 4.0V OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE 180 ¾ 820 ¾ IC = 2.0mA, VCE = 6.0V VCE(SAT) ¾ ¾ 0.5 V IC = 10mA, IB = 1.0mA fT ¾ 140 ¾ MHz VCE = 12V, IC = 2.0mA, f = 100MHz SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30304 Rev. 7 - 2 1 of 4 www.diodes.com IMX8 ã Diodes Incorporated Ordering Information (Note 5 & 6) Notes: Device Packaging Shipping IMX8-7-F SOT-26 3000/Tape & Reel 5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM KX8 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September KX8 Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 600 Note 1 Ta = 75°C 500 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 400 Ta = 25°C 300 Ta = -25°C 200 100 50 0 0 25 50 75 100 125 150 175 200 1.0 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30304 Rev. 7 - 2 0 10.0 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 2 of 4 www.diodes.com IMX8 100 IC, COLLECTOR CURRENT (mA) Ta = 25°C 10.0 Ta = 75°C Ta = -25°C 1.0 0.1 0 0.2 0.1 0.3 0.4 0.5 0.7 0.6 0.8 0.9 1000 1.0 VCE = 5 Volts fT, GAIN BANDWIDTH PRODUCT (MHz) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Base-Emitter Voltage Ta = 150°C 0.100 Ta = 25°C Ta = -50°C 100 0.010 10 1 1 10 100 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6 Typical Collector Current vs. Collector-Emitter Voltage DS30304 Rev. 7 - 2 3 of 4 www.diodes.com IMX8 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30304 Rev. 7 - 2 4 of 4 www.diodes.com IMX8