EMF5 Transistors Power management (dual transistors) EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor zEquivalent circuits (3) (2) DTr2 ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2 1.6 0.5 (6) 0.13 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 zDimensions (Units : mm) Each lead has same dimensions Abbreviated symbol : F5 (1) Tr1 R1 R2 (4) (5) (6) R1=47kΩ R2=47kΩ zPackaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF5 EMT6 F5 T2R 8000 Rev.A 1/4 EMF5 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Limits Symbol −15 VCBO VCEO −12 VEBO −6 IC −500 Collector current ICP −1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. DTr2 Parameter Symbol Limits VCC 50 Supply voltage VIN −10~+40 Input voltage IC 100 Collector current IO 30 Output current PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −100 − 260 6.5 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−200mA, IB=−10mA VCE=−2V, IC=−10mA VCE=−2V, IE=10mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 68 Typ. − − 100 − − − Max. 0.5 − 300 180 500 − Unit V V mV µA nA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA fT − 250 − MHz VCE=10V, IE=−5mA, f=100MHz ∗ R1 R2/R1 32.9 0.8 47 1.0 61.1 1.2 kΩ − − − DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio ∗Characteristics of built-in transistor. Rev.A 2/4 EMF5 Transistors 0.2 10 0.4 0.6 0.8 1.0 1.2 1.4 1 BASE TO EMITTER VOLTAGE : VBE (V) Ta=125°C 100 Ta=25°C Ta=−40°C 10 1 1 10 100 1000 100 1000 1000 IC/IB=20 Pulsed Ta=25°C 1000 Ta=−40°C Ta=125°C 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 10000 IC/IB=20 Pulsed BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) Fig.1 Grounded emitter propagation characteristics 1000 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=−40°C 100 1 0 Fig.2 DC current gain vs. collector current Ta=25°C Fig.5 Base-emitter saturation voltage vs. collector current 1000 Ta=25°C Pulsed 100 IC/IB=50 IC/IB=20 IC/IB=10 10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE Ta= −40° C Ta=25° C °C 1 VCE=2V Pulsed Ta=125°C 100 10 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Pulsed Ta=12 5 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectrical characteristic curves Tr1 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 EMF5 Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0