M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD1135, MP4TD1136 Ceramic Microstrip Case Style Outlines1,2,3 Features • High Dynamic Range Cascadable Available in short lead version as MP4TD1136. 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.0 GHz • 17 dBm Typical P1dB @ 0.7 GHz • 11 dB Typical Gain @ 0.5 GHz • 4.0 dB Typical Noise Figre @ 0.7 GHz • Cost Effective Ceramic Microstrip Package • Tape and Reel Packaging Available 4 GND .085 2,15 RF OUT AND BIAS RF INPUT 1 .020 0,508 3 Description M-Pulse's MP4TD1135 and MP4TD1136 are high performance silicon bipolar MMICs housed in cost effective ceramic microstrip packages. The MP4TD1135 and MP4TD1136 are designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD1135 and MP4TD1136 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. 2 GND .100 2,54 ø .083 2,11 .022 0,56 .057 1,45 .455 ±.030 11,54 ±0,76 .006 ±.002 0,15 ±0,05 0.180±0.010 4.57 ±0,25 TYPICAL POWER GAIN vs FREQUENCY MA4TD1135 MA4TD1136 14 Notes: (unless otherwise specified) 1. Dimensions are in / mm 2. Tolerance: in .xxx = ±.005; mm .xx = ±.13 3. See last page of data sheet for short lead Micro-X 12 GAIN (dB) 10 Id=60mA 8 6 4 2 0 0.1 1 FREQUENCY (GHz) 10 Pin Configuration Pin Number 1 2&4 3 Electrical Specifications @ TA = +25°C, Id = 60 mA, Z0 = 50Ω Symbol Parameters Test Conditions 2 Gp f = 0.1 GHz Power Gain (⏐S21⏐ ) Gain Flatness f = 0.1 to 0.7 GHz ΔGp f3dB 3 dB Bandwidth ref 50 MHz Gain SWRin Input SWR f = 0.1 to 2.0 GHz SWRout Output SWR f = 0.1 to 2.0 GHz P1dB Output Power @ 1dB Gain Compression f = 0.7 GHz NF f = 0.7 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.0 GHz tD Group Delay f = 1.0 GHz Vd Device Voltage dV/dT Device Voltage Temperature Coefficient - Units dB dB GHz dBm dB dBm ps V mV/°C Pin Description RF Input AC/DC Ground RF Output and DC Bias Min. 11.5 16.0 4.5 - Typ. 12.5 + 0.9 1.0 2.0 1.9 17.0 4.0 30.0 160 5.5 -8.0 Max. 13.5 + 1.1 4.5 6.5 - Specification Subject to Change Without Notice M-Pulse Microwave PH (408) 432-1480 __________________________________________________________________________________ FX (408) 432-3440 1 Silicon Bipolar MMIC Cascadable Amplifier MP4TD1135, MP4TD1136 Absolute Maximum Ratings1 Typical Bias Configuration Parameter Absolute Maximum Device Current 90 mA Power Dissipation2,3 560 mW RF Input Power +20 dBm Junction Temperature 200°C Storage Temperature -65°C to +200°C Thermal Resistance: θjc = 135°C/W Rbias Id = Vcc > 7.5 V Vcc - Vd Rbias RFC (Optional) 4 1. Exceeding these limits may cause permanent damage. 2. Case Temperature (Tc) = 25 °C. 3. Derate at 6.9 mW/°C for Tc > 124°C. C (DC Block) C (DC Block) 3 MP4TD1135 MP4TD1136 IN OUT 1 Vd = 5.5 V 2 Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted) RETURN LOSS vs FREQUENCY DEVICE CURRENT vs DEVICE VOLTAGE -6 -8 100 RETURN LOSS (dB) Id, DEVICE CURRENT (mA) 120 80 60 40 20 IN P U T -1 0 O U TPU T -1 2 -1 4 -1 6 -1 8 0 -2 0 0 2 4 6 0 .1 8 1 POUT @ 1dB GAIN COMPRESSION vs FREQUENCY POWER GAIN vs CURRENT 14 23 0 .1 G H z 12 POUT - 1dB (dBm) 1 .0 G H z 8 6 Id= 7 5 m A 21 0 .5 G H z 10 GAIN (dB) 10 F R E Q U E N C Y (G H z) Vd, D E V IC E V O L T A G E (V ) 2 .0 G H z 4 19 Id= 6 0 m A 17 15 Id= 4 0 m A 13 2 0 11 20 40 60 80 Id, D E V IC E C U R R E N T (m A ) 100 0. 1 1 F R E Q U E N C Y (G H z) 10 Specification Subject to Change Without Notice M-Pulse Microwave PH (408) 432-1480 __________________________________________________________________________________ FX (408) 432-3440 2 Silicon Bipolar MMIC Cascadable Amplifier MP4TD1135, MP4TD1136 REVERSE ISOLATION vs FREQUENCY NOISE FIGURE vs FREQUENCY -3 REVERSE ISOLATION (dB) 6 NOISE FIGURE (dB) 5 .5 Id= 7 5 m A 5 Id= 6 0 m A Id= 4 0 m A 4 .5 4 3 .5 3 -5 -7 -9 -1 1 -1 3 -1 5 -1 7 -1 9 0 .1 1 0 .1 10 1 10 F R E Q U E N C Y (G H z) F R E Q U E N C Y (G H z) Typical Scattering Parameters Z0 = 50Ω, TA = +25°C, Id = 60 mA Frequency S11 (GHz) Mag. Angle 0.05 0.133 -104.9 0.1 0.134 -106.7 0.2 0.140 -112.4 0.3 0.148 -118.6 0.4 0.153 -123.0 0.5 0.162 -129.9 0.6 0.172 -137.3 0.7 0.185 -144.4 0.8 0.198 -148.7 0.9 0.216 -154.6 1.0 0.232 -159.8 1.5 0.279 -179.0 2.0 0.314 164.8 Ordering Information Long Lead Model No. MP4TD1135 MP4TD1135T S21 Mag. 4.23 4.19 4.05 3.90 3.79 3.62 3.44 3.25 3.12 2.95 2.79 2.23 1.88 S12 Angle 157.5 156.2 151.7 146.8 143.2 137.8 131.2 124.7 120.4 114.4 108.8 89.4 74.3 Mag. 0.152 0.154 0.158 0.164 0.168 0.174 0.182 0.190 0.196 0.205 0.214 0.254 0.294 Short Lead Model No. MP4TD1136 MP4TD1136T S22 Angle 14.4 14.8 16.2 17.7 18.8 20.5 22.4 24.6 26.3 28.4 30.3 35.8 38.7 Mag 0.120 0.124 0.137 0.153 0.165 0.185 0.208 0.233 0.249 0.271 0.287 0.323 0.331 Angle -98.7 -100.6 -106.6 -113.1 -120.2 -125.1 -132.8 -140.8 -145.3 -151.4 -156.8 -175.4 169.7 Package Ceramic Tape and Reel Mico-X Case Styles (Long Lead) (Short Lead) Specification Subject to Change Without Notice M-Pulse Microwave PH (408) 432-1480 __________________________________________________________________________________ FX (408) 432-3440 3