AP02N90JB
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
D
▼ RoHS Compliant & Halogen-Free
BVDSS
RDS(ON)
ID
900V
7.2Ω
1.9A
G
S
Description
AP02N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
G
D
S
TO-251S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V
1.9
A
ID@TC=100℃
Drain Current, VGS @ 10V
1.2
A
6
A
62.5
W
1.13
W
18
mJ
1.9
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
2
℃/W
110
℃/W
1
201505271
AP02N90JB
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
VGS=10V, ID=0.85A
900
-
-
7.2
V
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.9A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=720V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=1.9A
-
12
20
nC
Qgs
Gate-Source Charge
VDS=540V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.7
-
nC
td(on)
Turn-on Delay Time
VDD=450V
-
10
-
ns
tr
Rise Time
ID=1.9A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
630
1000
pF
Coss
Output Capacitance
VDS=25V
-
40
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=1.9A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1.9A, VGS=0V,
-
360
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.8
-
µC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N90JB
2.0
1.25
10V
8.0V
6.0V
5.0V
T C =25 C
ID , Drain Current (A)
1.6
10V
8.0V
6.0V
5.0V
V G =4.5V
o
T C =150 C
1.00
ID , Drain Current (A)
o
1.2
0.8
V G =4.5V
0.75
0.50
0.25
0.4
0.00
0.0
0
3
6
9
12
15
18
0
V DS , Drain-to-Source Voltage (V)
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D = 0.85 A
V G =10V
2.4
1.0
.
Normalized RDS(ON)
Normalized BVDSS
1.1
2.0
1.6
1.2
0.8
0.9
0.4
0.8
0.0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
o
Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2.0
1.6
1.5
T j =25 o C
Normalized VGS(th)
IS(A)
T j =150 o C
1.0
1.2
0.8
0.5
0.4
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N90JB
f=1.0MHz
12
1000
C iss
I D = 1.9 A
V DS = 180 V
V DS = 360 V
V DS = 540 V
VGS , Gate to Source Voltage (V)
10
100
C (pF)
8
6
C oss
10
4
C rss
2
1
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
Operation in this
area limited by
RDS(ON)
100us
ID (A)
1.00
1ms
.
10ms
100ms
DC
0.10
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
SINGLE PULSE
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP02N90JB
MARKING INFORMATION
Part Number
02N90J
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5