Filtronic EB200P70-AJ High frequency packaged phemt Datasheet

FPD200P70
Data sheet v3.0
HIGH FREQUENCY PACKAGED PHEMT
FEATURES:
•
•
•
•
•
•
PACKAGE
20 dBm Output Power (P1dB)
17 dB Gain at 5.8 GHz
0.7 dB Noise Figure at 5.8 GHz
30 dBm Output IP3
45% Power-Added Efficiency
Useable Gain to 26 GHz
RoHS
9
GENERAL DESCRIPTION:
The FPD200P70 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 mm x 200 mm Schottky barrier
Gate, defined by high-resolution stepperbased photolithography.
TYPICAL APPLICATIONS:
•
•
LNAs and Driver Amplifiers to 26GHz
VCOs and Frequency Doublers
TYPICAL PERFORMANCE:
RF PARAMETER
SYMBOL
CONDITIONS
1.85GHZ
5.8GHZ
18GHZ
UNITS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 30mA
20
19
20
dBm
Small Signal Gain
SSG
VDS = 5 V; IDS = 30mA
21
17
9
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 30mA
45
45
45
%
POUT = P1dB
Maximum Stable Gain (|S21/S12|)
MSG
VDS = 5 V; IDS = 30mA
24
21
14
Minimum Noise Figure
NFmin
VDS = 5 V; IDS = 30mA
0.3
0.7
2.2
dB
Output Third-Order Intercept Point
IP3
VDS = 5V; IDS = 30mA
29
28
28.5
dBm
VDS = 8V; IDS = 30mA
31
30
31
MIN
TYP
MAX
UNITS
45
60
75
mA
POUT = 9 dBm per Tone
ELECTRICAL SPECIFICATIONS:
DC PARAMETER
SYMBOL
CONDITIONS
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
120
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
80
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.2 mA
0.7
0.9
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.2 mA
12
14
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.2 mA
14.5
16
V
Thermal Resistivity (see Notes)
θJC
VDS > 3V
325
°C/W
Note: TAMBIENT = 22°
1
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Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD200P70
Preliminary Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < -0.5V
8V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3V
Drain-Source Current
IDS
For VDS > 2V
IDSS
Gate Current
IG
Forward or reverse current
5mA
PIN
Under any acceptable bias state
16dBm
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-40°C to 150°C
PTOT
See De-Rating Note below
470mW
2 or more Max. Limits
80%
RF Input Power
2
Total Power Dissipation
Simultaneous Combination of Limits
4
Notes:
1
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
4
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 0.47 - (1/RθJC) x TPACK
where TPACK= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: PTOT = 470mW – (3 x (65 – 22)) = 341mW
BIASING GUIDELINES:
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices such as the FPD200P70.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Note that
pHEMTs, since they are “quasi- E/D mode” devices, exhibit Class AB traits when operated at 50%
of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25% to
33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3 performance.
2
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD200P70
Preliminary Datasheet v3.0
TYPICAL FREQUENCY RESPONSE
FPD200P70 biased @ IDS = 30mA
FPD200P70 Biased @ 5V, 30mA
35
2.5
MSG
S21
VD = 5V
2
N.F.min (dB)
MSG
20
Mag S21
25
&
30
15
10
VD = 3V
1.5
1
0.5
5
18
17
16
15
14
13
12
11
9
10
8
7
6
8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26
Frequency (GHz)
5
6.5
4
4.5
3
2.5
1
0.5
2
0
0
Frequency (GHz)
NOTE: Tuned Noise figure variation against frequency is shown above. The devices were biased nominally at VDS =
5V, IDS = 30mA. The test devices were tuned for minimum noise figure using tuners at the device input and output
ports. See Noise Parameter tables for tuned reflection coefficients.
TYPICAL RF PERFORMANCE
Power Transfer Characteristics
VDS = 5V, IDS = 30mA at f = 5.8GHz
Drain Efficiency and PAE
VDS = 5V, IDS = 30mA at f = 5.8GHz
60.0%
60.0%
8.50
Eff.
PAE
Output Power (dBm)
6.50
5.50
16.0
4.50
14.0
3.50
2.50
12.0
PAE (%)
7.50
Comp Point
Gain Compression (dB)
Pout (dBm)
18.0
50.0%
50.0%
40.0%
40.0%
30.0%
30.0%
20.0%
20.0%
10.0%
10.0%
1.50
10.0
0.50
8.0
-0.50
-7
-5
-3
-1
1
3
5
7
9
11
13
0.0%
Input Power (dBm)
0.0%
-7
-5
-3
-1
1
3
5
7
9
11
Input Power (dBm)
Typical Intermodulation Performance
VDS = 5V, IDS = 30mA at f = 5.8GHz
13
-26.00
-28.00
12
3rds (dBc)
-30.00
-32.00
Output Power (dBm)
10
-34.00
9
-36.00
8
-38.00
7
-40.00
6
-42.00
5
-44.00
4
-46.00
3
-48.00
2
3rd Order IM Products (dBc)
Pout (dBm)
11
NOTE: Typical Power, Efficiency and
Intermodulation is shown above. The devices
were biased nominally at VDS = 5V, IDS = 30mA
at a test frequency of 5.8 GHz. The test
devices were tuned using slide tuners at the
input and the output ports of the device.
-50.00
-11.7
-10.7
-9.7
-8.7
-7.8
-6.8
-5.8
-4.8
-3.8
Inpur Power (dBm)
3
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Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
13
Drain Efficiency (%)
20.0
FPD200P70
Preliminary Datasheet v3.0
TEMPERATURE RESPONSE
FPD200P70 IP3 Variation ove r Te mpe rature
VDS = 5.0V IDS = 30mA at f = 5.8GHz
FPD200P70 Gain & Power Variation over Temperature
VDS = 5.0V IDS = 30mA at f = 5.8GHz
19.00
19.00
28.00
18.00
27.00
15.00
14.00
13.00
16.00
12.00
P1dB (dBm)
SSG (dB)
16.00
17.00
Output IP3(dBm)
17.00
18.00
11.00
15.00
SSG
P1dB
14.00
-40
-20
0
20
40
60
26.00
25.00
24.00
OIP3
23.00
22.00
10.00
21.00
9.00
20.00
80
-40
-20
0
Temperature (C)
20
40
60
Temperature (C)
NOTE: Typical power, gain and Intermodulation variation over temperature is shown above. The devices
were biased nominally at VDS = 5V, IDS = 30mA at a test frequency of 5.8 GHz on eval board. The eval
board is tuned for minimum noise and maximum gain. The 1dB compression point is lower than the typical
number due to the change in matching.
TYPICAL I-V CHARACTERISTICS
110
FPD200P70 I-V Curves
110
VG=+0.50V
100
VG=+0.25V
90
80
VG=0V
70
ID
(mA)
60
VG=-0.25V
50
40
VG=-0.50V
30
20
VG=-0.75V
10
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS (V)
Note: The recommended method for measuring IDSS, is to set the Drain-Source voltage (VDS) at 1.3V. This
measurement point avoids the onset of spurious self-oscillation which would normally distort the current
measurement (this effect has been filtered from the I-V curves presented above).
4
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
80
FPD200P70
Preliminary Datasheet v3.0
NOISE PARAMETERS
Biased at 5V, 30mA
Freq
(GHz)
0.800
0.900
1.000
1.500
1.800
2.000
2.200
2.400
2.600
2.800
3.300
3.500
3.700
4.000
4.500
4.900
5.100
5.300
5.500
5.700
5.900
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
Biased at 3V, 30mA
Γopt
Mag.
0.788
0.788
0.788
0.787
0.784
0.782
0.778
0.774
0.769
0.763
0.746
0.738
0.730
0.715
0.688
0.662
0.649
0.634
0.619
0.604
0.587
0.470
0.367
0.281
0.239
0.185
0.124
0.031
0.118
0.244
Rn/50
Angle
10.9
12.1
13.2
19.1
22.6
24.9
27.2
29.6
31.9
34.2
39.9
42.2
44.5
47.9
53.5
58.0
60.2
62.4
64.7
66.9
69.1
78.6
90.8
97.7
108.3
109.7
127.3
-152.8
-76.9
-41.0
Freq
(GHz)
0.800
0.900
1.000
1.500
1.800
2.000
2.200
2.400
2.600
2.800
3.300
3.500
3.700
4.000
4.500
4.900
5.100
5.300
5.500
5.700
5.900
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
0.454
0.443
0.433
0.386
0.362
0.347
0.334
0.321
0.310
0.300
0.280
0.274
0.269
0.263
0.257
0.255
0.255
0.255
0.255
0.255
0.256
0.214
0.177
0.171
0.161
0.158
0.147
0.174
0.216
0.290
Γopt
Mag.
0.795
0.782
0.769
0.708
0.675
0.654
0.634
0.615
0.598
0.581
0.544
0.531
0.519
0.504
0.483
0.470
0.466
0.463
0.460
0.459
0.459
0.455
0.355
0.267
0.222
0.164
0.103
0.043
0.129
0.249
Rn/50
Angle
12.2
13.5
14.8
21.2
25.0
27.6
30.1
32.7
35.2
37.7
43.9
46.4
48.9
52.6
58.7
63.6
66.0
68.4
70.8
73.2
75.6
81.4
94.7
102.9
114.1
116.6
138.1
-128.1
-72.4
-36.9
0.356
0.352
0.349
0.330
0.320
0.313
0.307
0.301
0.295
0.290
0.277
0.273
0.268
0.262
0.253
0.247
0.245
0.242
0.240
0.237
0.235
0.202
0.167
0.161
0.154
0.153
0.147
0.176
0.223
0.300
5
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD200P70
Preliminary Datasheet v3.0
REFERENCE DESIGN 5.15 TO 5.8 GHZ
Gain
GHZ
5.5
dB
FPD200P70 Bias 5V, 30mA
20
17
N.F.
dB
1.0
P1dB
dBm
16.5
IP3
dBm
28
Vd
V
5
Vg
V
-0.4 to -0.6
Id
mA
30
Gain and R.L. (dB)
FREQUENCY
DB(|S(2,1)|)
15
DB(|S(1,1)|)
10
DB(|S(2,2)|)
5
0
-5
-10
-15
-20
-25
Board Material is Rogers 4003 with
a die electric thickness of 20mil &
1/2 oz. Cu cladding on both sides.
-30
2
2.5
3
3.5
4
4.5
5
5.5
Frequency (GHz)
6
6.5
7
7.5
8
Measured Evaluation board gain and return Loss
SCHEMATIC
CAP
ID=C2
C=33 pF
MTEE
ID=TL11
W1=45 mil
W2=90 mil
W3=45 mil
1
PORT
P=1
Z=50 Ohm
MLIN
ID=TL2
W=90 mil
L=420 mil
2
1
3
RES
ID=R1
R=20 Ohm
MTEE
ID=TL10
W1=90 mil
W2=30 mil
W3=45 mil
MLIN
ID=TL20
W=65 mil
L=130 mil
MLIN
ID=TL3
W=30 mil
L=150 mil
2
2
MLIN
ID=TL6
W=5 mil
L=250 mil
MLIN
ID=TL5
W=50 mil
L=100 mil
1
MLIN
ID=TL18
W=170 mil
L=135 mil
MTEE
ID=TL22
W1=170 mil
W2=45 mil
W3=45 mil
1
MLIN
ID=TL14
W=45 mil
L=50 mil
CAP
ID=C4
C=33 pF
2
2
3
PORT
P=2
Z=50 Ohm
3
1
SUBCKT
ID=Q1
NET="FET"
3
MLIN
ID=TL8
W=45 mil
L=30 mil
MTEE
ID=TL23
W1=170 mil
W2=65 mil
W3=220 mil
MLEF
ID=TL1
W=45 mil
L=190 mil
MLEF
ID=TL12
W=220 mil
L=380 mil
MRSTUB2
ID=TL9
Ri=20 mil
Ro=350 mil
Theta=90 Deg
MLIN
ID=TL17
W=5 mil
L=310 mil
CAP
ID=C5
C=33 pF
CAP
ID=C6
C=1e6 pF
CAP
ID=C1
C=33 pF
MRSTUB2
ID=TL21
Ri=20 mil
Ro=290 mil
Theta=90 Deg
MLIN
ID=TL15
W=50 mil
L=100 mil
MLIN
ID=TL16
W=50 mil
L=50 mil
DCVS
ID=V2
V=5 V
DCVS
ID=V1
V=-0.5 V
BOARD LAYOUT
Q1
33pF
33pF
Q1
20 Ohms
P1
P2
33pF
33pF
0.01uF
1.0uF
0.01uF
1.0uF
6
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD200P70
Preliminary Datasheet v3.0
P70 PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT
TAPE AND REEL DIMENSIONS AND PART ORIENTATION
● Terminal tape = 40mm(min.)
Product Marking
● Leader tape with empty
Cavities = 350mm(min.)
The device is marked
ABC where :-
● Trailer tape with empty
Cavities = 160mm(min.)
A = Product type
B = Week code
C = Year code
● Devices per reel = 1000
7
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD200P70
Preliminary Datasheet v3.0
S-PARAMETERS BIASED @ 5V, 30MA
FREQ[GHz]
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
10.500
11.000
11.500
12.000
12.500
13.000
13.500
14.000
14.500
15.000
15.500
16.000
16.500
17.000
17.500
18.000
18.500
19.000
19.500
20.000
20.500
21.000
21.500
22.000
22.500
23.000
23.500
24.000
24.500
25.000
25.500
26.000
S11m
0.987
0.967
0.936
0.899
0.857
0.817
0.771
0.735
0.701
0.663
0.628
0.594
0.555
0.516
0.471
0.433
0.395
0.366
0.350
0.338
0.324
0.322
0.334
0.360
0.391
0.425
0.457
0.491
0.530
0.561
0.588
0.597
0.611
0.634
0.660
0.683
0.688
0.673
0.656
0.646
0.641
0.647
0.661
0.672
0.669
0.670
0.653
0.643
0.610
0.586
0.555
0.559
S11a
-11.6
-23.7
-35.7
-47.8
-59.3
-69.5
-78.3
-86.1
-93.5
-101.3
-109.1
-118.6
-128.1
-139.0
-150.7
-161.4
-171.5
-179.6
173.1
163.1
151.4
136.9
121.1
106.5
94.3
84.5
75.2
66.5
57.1
47.5
37.8
29.2
21.1
12.5
4.7
-1.5
-4.7
-6.5
-8.0
-13.5
-22.8
-33.9
-43.2
-50.7
-57.0
-62.2
-69.2
-77.0
-81.0
-86.1
-92.5
-105.7
S21m
6.94
6.814
6.601
6.334
6.004
5.66
5.318
5.048
4.814
4.612
4.467
4.374
4.268
4.166
4.016
3.869
3.699
3.561
3.511
3.499
3.496
3.478
3.437
3.385
3.331
3.268
3.19
3.108
3.01
2.924
2.852
2.797
2.736
2.672
2.578
2.455
2.307
2.173
2.056
1.987
1.929
1.882
1.839
1.788
1.722
1.647
1.594
1.56
1.538
1.553
1.586
1.612
S21a
167.7
156.2
144.9
133.9
123.4
113.8
104.9
96.8
89.1
81.5
74.2
66.0
58.1
49.8
41.5
33.8
26.3
19.6
13.7
6.6
-0.8
-8.9
-17.1
-25.4
-33.8
-42.5
-51.5
-60.2
-68.7
-76.9
-85.0
-93.4
-102.1
-111.1
-120.4
-129.5
-137.5
-144.8
-151.9
-158.5
-166.0
-174.5
176.4
166.3
156.4
147.6
140.0
131.3
123.8
115.8
107.4
96.8
S12m
0.007
0.013
0.019
0.023
0.027
0.029
0.031
0.031
0.032
0.032
0.032
0.033
0.034
0.036
0.036
0.034
0.031
0.029
0.032
0.039
0.046
0.054
0.061
0.067
0.072
0.078
0.082
0.085
0.088
0.091
0.094
0.095
0.097
0.102
0.101
0.099
0.096
0.093
0.090
0.090
0.089
0.089
0.088
0.089
0.088
0.088
0.087
0.090
0.089
0.096
0.103
0.110
S12a
81.9
75.2
67.9
60.9
54.6
48.8
42.5
38.9
37.6
33.7
32.2
31.0
28.8
23.8
16.5
13.7
11.4
17.8
26.8
27.7
26.7
22.8
16.8
11.0
5.2
-0.9
-7.1
-13.0
-19.7
-24.9
-31.0
-37.5
-42.9
-50.7
-58.3
-65.8
-72.3
-78.1
-84.1
-91.2
-98.8
-106.4
-115.1
-124.1
-133.9
-140.9
-151.0
-157.1
-166.0
-175.0
175.2
165.6
S22m
0.785
0.777
0.765
0.750
0.734
0.718
0.701
0.691
0.683
0.668
0.663
0.656
0.644
0.627
0.600
0.580
0.561
0.557
0.571
0.585
0.601
0.603
0.589
0.575
0.568
0.571
0.575
0.578
0.569
0.559
0.557
0.569
0.576
0.574
0.572
0.577
0.593
0.611
0.623
0.634
0.639
0.640
0.623
0.610
0.608
0.611
0.617
0.610
0.602
0.586
0.561
0.527
S22a
-7.3
-14.5
-21.1
-27.1
-32.3
-37.6
-42.5
-47.2
-51.4
-55.2
-58.3
-63.4
-67.9
-73.1
-78.4
-82.7
-87.4
-91.7
-96.1
-102.2
-108.3
-115.7
-123.4
-131.2
-139.5
-149.0
-158.9
-168.4
-177.0
175.2
167.7
157.6
146.2
134.2
122.2
109.8
98.4
88.2
79.9
75.9
73.7
69.8
60.8
47.9
34.5
23.5
15.6
7.1
-1.1
-8.5
-13.3
-21.0
8
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD200P70
Preliminary Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
PART NUMBER
This package is compatible with both lead free
and leaded solder reflow processes as defined
within IPC/JEDEC J-STD-020C. The maximum
package temperature should not exceed
260°C. Package leads are gold plated.
DESCRIPTION
FPD200P70
Packaged pHEMT
EB200P70-AJ
5.15 to 5.8GHz evaluation board
HANDLING PRECAUTIONS:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
ESD/MSL RATING:
These devices should be treated as Class 0
(0V - 250V) using the human body model as
defined in JEDEC Standard No. 22-A114.
The device has a MSL rating of Level 1. To
determine this rating, preconditioning was
performed to the device per, the Pb-free solder
profile defined within IPC/JEDEC J-STD-020C,
Moisture / Reflow sensitivity classification for
non-hermetic solid state surface mount devices
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device
model are available on request.
RELIABILITY:
A MTTF of 4.2 million hours at a channel
temperature of 150°C is achieved for the
process used to manufacture this device.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
9
Tel: +44 (0) 1325 301111
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com