Cypress CY7C1021D-10ZSXE 1-mbit (64k x 16) static ram Datasheet

CY7C1021D
1-Mbit (64K x 16) Static RAM
Functional Description [1]
Features
• Pin-and function-compatible with CY7C1021B
• High speed
— tAA = 10 ns
• Low active power
— ICC = 80 mA @ 10 ns
The CY7C1021D is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power-down feature that significantly reduces
power consumption when deselected. The input/output pins
(IO0 through IO15) are placed in a high-impedance state when:
•
•
•
•
• Low CMOS Standby Power
— ISB2 = 3 mA
• 2.0V Data Retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Independent control of upper and lower bits
• Available in Pb-free 44-pin 400-Mil wide Molded SOJ and
44-pin TSOP II packages
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
BHE and BLE are disabled (BHE, BLE HIGH)
When the write operation is active (CE LOW, and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW,
then data from IO pins (IO0 through IO7), is written into the
location specified on the address pins (A0 through A15). If Byte
High Enable (BHE) is LOW, then data from IO pins (IO8
through IO15) is written into the location specified on the
address pins (A0 through A15).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on IO0 to IO7.
If Byte High Enable (BHE) is LOW, then data from memory
appears on IO8 to IO15. See the “Truth Table” on page 8 for a
complete description of read and write modes.
Logic Block Diagram
64K x 16
RAM Array
SENSE AMPS
A7
A6
A5
A4
A3
A2
A1
A0
ROW DECODER
DATA IN DRIVERS
IO0–IO7
IO8–IO15
COLUMN DECODER
A8
A9
A10
A11
A12
A13
A14
A15
BHE
WE
CE
OE
BLE
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05462 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 22, 2007
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CY7C1021D
Pin Configuration [2]
SOJ/TSOP II
Top View
A4
A3
A2
A1
A0
CE
IO0
IO1
IO2
IO3
VCC
VSS
IO4
IO5
IO6
IO7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
IO15
IO14
IO13
IO12
VSS
VCC
IO11
IO10
IO9
IO8
NC
A8
A9
A10
A11
NC
Selection Guide
–10 (Industrial)
–12 (Automotive) [3]
Unit
Maximum Access Time
10
12
ns
Maximum Operating Current
80
120
mA
Maximum CMOS Standby Current
3
15
mA
Notes
2. NC pins are not connected on the die.
3. Automotive Product Information is Preliminary.
Document #: 38-05462 Rev. *E
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CY7C1021D
Maximum Ratings
Current into Outputs (LOW) ........................................ 20 mA
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Ambient
Temperature
VCC
Speed
Industrial
–40°C to +85°C
5V ± 10%
10 ns
Automotive
–40°C to +125°C
Range
Supply Voltage on VCC to Relative GND [4] ... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [4] .....................................–0.5V to VCC+0.5V
DC Input Voltage [4]..................................–0.5V to VCC+0.5V
12 ns
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
–10 (Industrial)
Min
Max
VOH
Output HIGH Voltage
IOH = –4.0 mA
2.4
VOL
Output LOW Voltage
IOL = 8.0 mA
VIH
Input HIGH Voltage
2.2
VCC + 0.5V
VIL
Input LOW Voltage [4]
−0.5
IIX
Input Leakage Current
GND < VI < VCC
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
ICC
VCC Operating
Supply Current
VCC = Max,
IOUT = 0 mA,
f = fmax = 1/tRC
–12 (Automotive)
Min
Max
2.4
0.4
Unit
V
0.4
V
2.0
VCC + 0.5V
V
0.8
–0.5
0.8
V
−1
+1
–5
+5
µA
−1
+1
–5
+5
µA
100 MHz
80
-
mA
83 MHz
72
120
mA
66 MHz
58
100
mA
40 MHz
37
63
mA
ISB1
Automatic CE Power-down
Current —TTL Inputs
Max VCC, CE > VIH
VIN > VIH or VIN < VIL, f = fmax
10
50
mA
ISB2
Automatic CE Power-down
Current —CMOS Inputs
Max VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
3
15
mA
Note
4. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
Document #: 38-05462 Rev. *E
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CY7C1021D
Capacitance [5]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max
Unit
8
pF
8
pF
TA = 25°C, f = 1 MHz, VCC = 5.0V
Thermal Resistance [5]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
SOJ
TSOP II
Unit
59.52
53.91
°C/W
36.75
21.24
°C/W
AC Test Loads and Waveforms [6]
ALL INPUT PULSES
3.0V
Z = 50Ω
90%
OUTPUT
50 Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
30 pF*
90%
10%
10%
GND
1.5V
Rise Time: ≤ 3 ns
(a)
(b)
Fall Time: ≤ 3 ns
High-Z characteristics:
R1 480Ω
5V
OUTPUT
INCLUDING
JIG AND
SCOPE
R2
255Ω
5 pF
(c)
Notes
5. Tested initially and after any design or process changes that may affect these parameters.
6. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
Document #: 38-05462 Rev. *E
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CY7C1021D
Switching Characteristics (Over the Operating Range) [7]
Parameter
Description
–10 (Industrial)
–12 (Automotive)
Min
Min
Max
Max
Unit
Read Cycle
tpower [8]
VCC(typical) to the first access
100
100
µs
tRC
Read Cycle Time
10
12
ns
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
tDOE
OE LOW to Data Valid
OE LOW to Low Z
tLZOE
[9]
OE HIGH to High Z
tHZOE
CE LOW to Low Z
tLZCE
10
ns
10
12
ns
5
6
ns
3
3
0
[9, 10]
[9]
12
0
5
3
[9, 10]
ns
ns
6
3
ns
tHZCE
CE HIGH to High Z
tPU
CE LOW to Power-Up
tPD
CE HIGH to Power-Down
10
12
ns
tDBE
Byte Enable to Data Valid
5
6
ns
tLZBE
Byte Enable to Low Z
0
6
0
0
Byte Disable to High Z
tHZBE
Write Cycle
5
ns
ns
0
5
ns
ns
6
ns
[12]
tWC
Write Cycle Time
10
12
ns
tSCE
CE LOW to Write End
7
10
ns
tAW
Address Set-Up to Write End
7
10
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
7
10
ns
tSD
Data Set-Up to Write End
6
7
ns
tHD
Data Hold from Write End
0
0
ns
3
3
ns
WE HIGH to Low Z
[9]
tHZWE
WE LOW to High Z
[9, 10]
tBW
Byte Enable to End of Write
tLZWE
5
7
6
10
ns
ns
Notes
7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
8. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
10. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (c) of “AC Test Loads and Waveforms [6]” on page 4. Transition is measured when
the outputs enter a high impedance state.
11. This parameter is guaranteed by design and is not tested.
12. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write,
and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that
terminates the write.
Document #: 38-05462 Rev. *E
Page 5 of 11
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CY7C1021D
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR
tR
[4]
Conditions
Min
Unit
2.0
V
VCC = VDR = 2.0 V, CE > VCC – 0.3 V, Industrial
VIN > VCC – 0.3 V or VIN < 0.3 V
Automotive
Chip Deselect to Data Retention Time
[13]
Max
Operation Recovery Time
3
mA
15
mA
0
ns
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
4.5V
VCC
VDR > 2V
4.5V
tR
tCDR
CE
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [14, 15]
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled) [15, 16]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
tLZOE
BHE, BLE
tHZCE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
tHZBE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
tPD
tPU
50%
50%
ICC
ISB
Notes
13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.
14. Device is continuously selected. OE, CE, BHE and/or BLE = VIL.
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05462 Rev. *E
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CY7C1021D
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled) [17, 18]
tWC
ADDRESS
tSA
tSCE
CE
tAW
tHA
tPWE
WE
t BW
BHE, BLE
tSD
tHD
DATA IO
Write Cycle No. 2 (BLE or BHE Controlled)
tWC
ADDRESS
BHE, BLE
tSA
tBW
tAW
tHA
tPWE
WE
tSCE
CE
tSD
tHD
DATA IO
Notes
17. Data IO is high impedance if OE or BHE and/or BLE = VIH.
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05462 Rev. *E
Page 7 of 11
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CY7C1021D
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE, BLE
tHZWE
tSD
tHD
DATA IO
tLZWE
Truth Table
CE
OE
WE
H
X
X
X
X
High Z
High Z
Power-Down
Standby (ISB)
L
L
H
L
L
Data Out
Data Out
Read – All bits
Active (ICC)
L
H
Data Out
High Z
Read – Lower bits only
Active (ICC)
H
L
High Z
Data Out
Read – Upper bits only
Active (ICC)
L
L
Data In
Data In
Write – All bits
Active (ICC)
L
H
Data In
High Z
Write – Lower bits only
Active (ICC)
H
L
High Z
Data In
Write – Upper bits only
Active (ICC)
L
X
L
BLE
BHE
IO0–IO7
IO8–IO15
Mode
Power
L
H
H
X
X
High Z
High Z
Selected, Outputs Disabled
Active (ICC)
L
X
X
H
H
High Z
High Z
Selected, Outputs Disabled
Active (ICC)
Ordering Information
Speed
(ns)
10
12
Ordering Code
Package
Diagram
Package Type
CY7C1021D-10VXI
51-85082
44-pin (400-Mil) Molded SOJ (Pb-free)
CY7C1021D-10ZSXI
51-85087
44-pin TSOP Type II (Pb-free)
CY7C1021D-10ZSXE
51-85087
44-pin TSOP Type II (Pb-free)
Operating
Range
Industrial
Automotive
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Document #: 38-05462 Rev. *E
Page 8 of 11
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CY7C1021D
Package Diagrams
Figure 1. 44-pin (400-Mil) Molded SOJ, 51-85082
51-85082-*B
Document #: 38-05462 Rev. *E
Page 9 of 11
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CY7C1021D
Package Diagrams (continued)
Figure 2. 44-Pin Thin Small Outline Package Type II, 51-85087
51-85087-*A
All product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05462 Rev. *E
Page 10 of 11
© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1021D
Document History Page
Document Title: CY7C1021D, 1-Mbit (64K x 16) Static RAM
Document Number: 38-05462
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
201560
See ECN
SWI
Advance Information data sheet for C9 IPP
*A
233695
See ECN
RKF
DC parameters modified as per EROS (Spec # 01-02165)
Pb-free Offering in the Ordering Information
*B
263769
See ECN
RKF
Added Data Retention Characteristics Table
Added Tpower Spec in Switching Characteristics Table
Shaded Ordering Information
*C
307601
See ECN
RKF
Reduced Speed bins to –10 and –12 ns
*D
520647
See ECN
VKN
Converted from Preliminary to Final
Removed Commercial Operating range
Added ICC values for the frequencies 83MHz, 66MHz and 40MHz
Updated Thermal Resistance table
Added Automotive Product Information
Updated Ordering Information Table
Changed Overshoot spec from VCC+2V to VCC+1V in footnote #4
*E
802877
See ECN
VKN
Changed Commercial operating range ICC spec from 60 mA to 80 mA for
100MHz, 55 mA to 72 mA for 83MHz, 45 mA to 58 mA for 66MHz, 30 mA to
37 mA for 40MHz
Changed Automotive operating range ICC spec from 100 mA to 120 mA for
83MHz, 90 mA to 100 mA for 66MHz, 60 mA to 63 mA for 40MHz
Document #: 38-05462 Rev. *E
Page 11 of 11
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