GUNN Diodes Anode Heat Sink ® TM MG1041 – MG1059 Features ● High Reliability ● Low-Phase Noise ● 9.5–35.5 GHz Operation ● Pulsed and CW Designs to 20 mW Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Copyright 2008 Rev: 2009-01-19 Description Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz. Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GUNN Diodes Anode Heat Sink ® TM MG1041 – MG1059 (Discrete Frequency: Anode Heatsink) CW Epi-Up Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Max. Operating Current (mA) Package Outline3 MG1052-11 9.5–11.5 10 8 140 M11 MG1056-11 9.5–11.5 20 8 200 M11 MG1054-11 23.0–25.0 5 5 200 M11 MG1058-11 23.0–25.0 10 5 300 M11 MG1059-11 33.5–35.5 5 5 300 M11 Pulsed Epi-Up Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Max. Operating Current (mA) Package Outline3 MG1041-11 9.5–11.5 10 9 110 M11 MG1042-11 9.5–11.5 20 9 140 M11 MG1043-11 9.5–11.5 30 10 180 M11 MG1044-11 23.0–25.0 5 8 120 M11 MG1045-11 23.0–25.0 10 8 150 M11 MG1046-11 23.0–25.0 20 8 200 M11 Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ. 3 Polarity: cathode is the cap and anode is the heatsink. 1 2 Typical Characteristics 1.0 25 -50°C Power Output (mW) IBias Ratio IThreshold 0.8 0.6 0.4 0.2 0 0 1 2 VBias VThreshold 20 15 90°C 10 5 0 3 0 1 2 3 5 4 6 7 Bias Voltage (V) Ratio Power Output vs. Bias Voltage IBias Ratio vs. VBias Ratio IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These products are supplied with a RoHS complaint Gold finish . These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2