AP86T03GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
6.5mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
□
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T03GJ)
are available for low-profile applications.
G
S
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
75
A
ID@TC=100℃
Continuous Drain Current
55
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
TJ
300
A
75
W
Storage Temperature Range
-55 to 175
℃
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
2.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200902262
AP86T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=45A
-
-
6.5
mΩ
VGS=4.5V, ID=30A
-
-
11
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
58
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
25
40
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
5.6
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
17
nC
VDS=15V
-
10.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
78
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
27
-
ns
tf
Fall Time
RD=0.5Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
2170 3500
pF
Coss
Output Capacitance
VDS=25V
-
485
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
310
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=10A, VGS=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
36
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP86T03GH/J
250
120
10V
7.0 V
o
T C =25 C
o
T C =175 C
10V
7 .0V
6.0V
5.0 V
100
6.0V
ID , Drain Current (A)
ID , Drain Current (A)
200
150
5.0 V
100
80
60
V G =4.0V
40
V G = 4.0 V
50
20
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8.0
2.0
I D =45A
V G =10V
I D =30A
T C =25 o C
Normalized RDS(ON)
10
RDS(ON) (mΩ)
6.0
Fig 2. Typical Output Characteristics
12
8
1.6
1.2
0.8
6
0.4
4
2
4
6
8
-50
10
0
100
150
200
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
1.2
Normalized VGS(th) (V)
40
o
T j =175 o C
50
o
V GS , Gate-to-Source Voltage (V)
IS(A)
4.0
V DS , Drain-to-Source Voltage (V)
T j =25 C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP86T03GH/J
10
f=1.0MHz
4000
8
3000
V DS =15V
V DS =18V
V DS =24V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
C iss
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4