FDS4685 40V P-Channel PowerTrench® MOSFET Features Applications ■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V ■ Power management ■ Load switch ■ Battery protection ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability D D D General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). D SO-8 Pin 1 S S S G 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –40 V VGSS Gate-Source Voltage ±20 V ID Drain Current –8.2 A - Continuous (Note 1a) - Pulsed PD –50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.4 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.2 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4685 FDS4685 13” 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS4685 Rev. C(W) 1 www.fairchildsemi.com FDS4685 40V P-Channel PowerTrench® MOSFET June 2005 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –32 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA –3 V –40 V mV/°C –32 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4.7 RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –8.2 A VGS = –4.5 V, ID = –7 A VGS = –10 V, ID = –8.2 A, TJ = 125°C 22 29 31 gFS Forward Transconductance VDS = –5 V, ID = –8.2 A 22 S VDS = –20 V, VGS = 0 V, f = 1.0 MHz 1872 pF –1 –1.6 mV/°C 27 35 42 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance 256 pF 134 pF VGS = 15 mV, f = 1MHz 4 Ω VDD = –20 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 14 25 ns 11 20 ns Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 50 80 ns tf Turn–Off Fall Time 18 32 ns 19 27 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –20 V, ID = –8.2 A, VGS = –5 V nC 5.6 nC 6.1 nC Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = –8.2 A, diF/dt = 100 A/µs –0.7 –1.2 V 26 nS 15 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDS4685 Rev. C(W) www.fairchildsemi.com FDS4685 40V P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 2.4 50 -6.0V -4.5V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) -4.0V 40 30 -3.5V 20 -3.0V 10 0 2.2 VGS = - 3.5V 2 1.8 1.6 -4.0V -4.5V 1.4 -5.0V -6.0V 1.2 -8.0V -10V 1 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 10 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) 30 40 50 -ID , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.8 0.09 R DS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -4.1A 0.08 ID = -8.2A V GS = - 10V 1.6 1.4 1.2 1 0.8 0.6 -50 0.07 0.06 0.05 TA = 125° C 0.04 0.03 TA = 25°C 0.02 0.01 -25 0 25 50 75 100 125 150 2 4 Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 TA = -55°C -IS , REVERSE DRAIN CURRENT (A) 100 V DS = -5V -ID, DRAIN CURRENT (A) 6 -V GS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) 25°C 40 30 125°C 20 10 0 1.5 VGS = 0V 10 TA = 125° C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 2 2.5 3 3.5 4 4.5 0 -V GS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 5. Transfer Characteristics. 3 FDS4685 Rev. C(W) 0.2 www.fairchildsemi.com FDS4685 40V P-Channel PowerTrench® MOSFET Typical Characteristics: 2500 VDS = -10V ID = -8.2A 2000 8 -30V 6 4 1500 1000 COSS 2 500 0 0 CRSS 0 5 10 15 20 25 30 35 40 0 15 20 25 30 35 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 40 50 P(pk), PEAK TRANSIENT POWER (W) 100µs -ID, DRAIN CURRENT (A) 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 1 10s DC 0.1 5 Qg, GATE CHARGE (nC) 100 VGS = -10V SINGLE PULSE RθJA = 125° C/W T A = 25°C 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W T A = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 1000 t 1, TIME (sec) -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE f = 1 MHz VGS = 0 V CISS -20V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * R θ JA 0.2 0.1 RθJA = 125°C/W 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 T J - T A = P * Rθ JA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 FDS4685 Rev. C(W) www.fairchildsemi.com FDS4685 40V P-Channel PowerTrench® MOSFET Typical Characteristics: The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDS4685 Rev. C(W) www.fairchildsemi.com FDS4685 40V P-Channel PowerTrench® MOSFET TRADEMARKS