MBR0520LT1, MBR0520LT3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state−of−the−art devices have the following features: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES, 20 VOLTS Features • • • • • • Guardring for Stress Protection Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C) 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly Pb−Free Packages are Available SOD−123 CASE 425 STYLE 1 Mechanical Characteristics • Reel Options: • • • • • MBR0520LT1 = 3,000 per 7″ reel / 8 mm tape MBR0520LT3 = 10,000 per 13″ reel / 8 mm tape Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAM B2 M G G B2 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBR0520LT1 SOD−123 3000/Tape & Reel MBR0520LT1G SOD−123 (Pb−Free) 3000/Tape & Reel MBR0520LT3 SOD−123 10,000/Tape & Reel MBR0520LT3G SOD−123 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 5 1 Publication Order Number: MBR0520LT1/D MBR0520LT1, MBR0520LT3 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (Rated VR, TL = 90°C) IF(AV) 0.5 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ −65 to +125 °C 1000 V/ms > 400 > 8000 V Voltage Rate of Change (Rated VR) dv/dt ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance; Junction−to−Ambient (Note 1) RqJA 206 °C/W Thermal Resistance; Junction−to−Lead RqJL 150 °C/W ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 Amps) (iF = 0.5 Amps) IR Maximum Instantaneous Reverse Current (Note 2) (VR = 10 V) (Rated DC Voltage = 20 V) 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.300 0.385 0.220 0.330 TJ = 25°C TJ = 100°C 75 mA 250 mA 5 mA 8 mA V mA 10,000 1 TJ = 100°C 0.1 0.01 75°C 25°C I R, REVERSE CURRENT (A) μ iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR0520LT1, MBR0520LT3 −25 °C 0.1 0.2 0.3 0.4 vF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 100°C 1000 75°C 100 0.5 0 Figure 1. Typical Forward Voltage I R, REVERSE CURRENT (A) μ C, CAPACITANCE (pF) 20 25 100 150 100 50 5 0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 1 −25 °C 0.1 0.01 25 TJ = +25°C 10 0 0.75 0.625 P F(AV), AVERAGE POWER DISSIPATION (WATT) 1 0.875 DC IPK = p = SQUARE WAVE IAV 0.5 5 0.375 10 0.25 20 0.125 0 60 67 74 95 102 109 81 88 LEAD TEMPERATURE (°C) 116 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 Figure 4. Typical Reverse Current Figure 3. Typical Capacitance AVERAGE FORWARD CURRENT (AMP) 10 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current 200 0 5 123 130 0.35 0.315 TJ = 125°C 0.28 0.245 IPK + 20 10 IAV 0.21 0.175 5 p SQUARE WAVE DC 0.14 0.105 0.07 0.035 0 0 Figure 5. Current Derating (Lead) 0.5 0.625 0.75 0.875 0.125 0.25 0.375 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 6. Power Dissipation http://onsemi.com 3 1 MBR0520LT1, MBR0520LT3 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE MILLIMETERS DIM MIN NOM MAX A 0.94 1.17 1.35 A1 0.00 0.05 0.10 b 0.51 0.61 0.71 −−− −−− c 0.15 D 1.40 1.60 1.80 E 2.54 2.69 2.84 HE 3.56 3.68 3.86 −−− −−− L 0.25 STYLE 1: PIN 1. CATHODE 2. ANODE E L 2 MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− C b SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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