Renesas FS30KMJ-06F-A8 High-speed switching use nch power mos fet Datasheet

FS30KMJ-06F
High-Speed Switching Use
Nch Power MOS FET
REJ03G0254-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
VDSS : 60 V
rDS(ON) (max) : 22 mΩ
ID : 30 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
TO-220FN
2
1. Gate
2. Drain
3. Source
1
1
2
3
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
VDSS
VGSS
Ratings
60
±20
Unit
V
V
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
30
120
30
30
120
25
– 55 to +150
– 55 to +150
2000
A
A
A
A
A
W
°C
°C
V
—
2.0
g
Conditions
VGS = 0 V
VDS = 0 V
L = 10 µH
AC 1 minute,
Terminal to case
Typical value
FS30KMJ-06F
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Min.
60
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
1.5
18
22
0.27
38
2600
385
200
13
45
240
100
1.0
Max.
—
—
100
±10
2.0
22
28
0.33
—
—
—
—
—
—
—
—
1.5
Unit
V
V
µA
µA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 V
ID = 15 A, VGS = 4 V
ID = 15 A, VGS = 10 V
ID = 15 A, VDS = 10 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
Thermal resistance
Reverse recovery time
Rth(ch-c)
trr
—
—
—
50
5.00
—
°C/W
ns
Channel to case
IS = 30 A, dis/dt = – 100 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
VDD = 30 V, ID = 15 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 15 A, VGS = 0 V
FS30KMJ-06F
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
3
2
2
40
Drain Current ID (A)
Drain Power Dissipation PD (W)
50
30
20
10
0
0
50
100
tw = 10µs
1
100µs
10
7
5
3
2
1ms
2 3
2
5 7 10
Output Characteristics (Typical)
Output Characteristics (Typical)
20
VGS = 10V
Tc = 25°C
Pulse Test
5V
30
4V
3V
20
10
2.5V
Drain Current ID (A)
40
VGS = 10V
1.0
2.0
3.0
4.0
16
5V
12
3.5V
PD = 25W
4V
3V
8
2.5V
4
Tc = 25°C
Pulse Test
PD = 25W
0
0
5.0
0.4
0.8
1.2
1.6
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
2.0
Tc = 25°C
Pulse Test
1.6
ID = 50A
1.2
0.8
30A
0.4
10A
2
4
6
8
Gate-Source Voltage VGS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
10
Drain-Source On-State Resistance rDS(ON) (mΩ)
Drain Current ID (A)
Drain-Source On-State Voltage VDS(ON) (V)
5 7 10
Drain-Source Voltage VDS (V)
3.5V
0
0
DC
1
Case Temperature Tc (°C)
50
0
0
10ms
0
10
7 Tc = 25°C
5 Single Pulse
3
0
3 5 7 10 2 3
200
150
10
7
5
3
2
50
2.0
Tc = 25°C
Pulse Test
40
30
VGS = 4V
10V
20
10
0 0
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 710
Drain Current ID (A)
FS30KMJ-06F
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
50
Tc = 25°C
VDS = 10V
Pulse Test
40
30
20
10
0
0
2
4
6
8
10
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
75°C
1
10
7
5
125°C
3
2
VDS = 10V
Pulse Test
0
10 0
10
5 7 101
2 3
5 7 102
Switching Characteristics (Typical)
103
7 Tch = 25°C, VDD = 30V
= 10V, RGEN = RGS = 50Ω
V
5 GS
3
2
Ciss
103
7
5
3
Tch = 25°C
2 f = 1MHz
Coss
VGS = 0V
Crss
td(off)
3
2
tf
102
7
5
tr
3
2
td(on)
1
10 0
10
2 3
5 7 10
1
2 3
5 7 10
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
10
2
50
Tch = 25°C
ID = 30A
VGS = 0V
Pulse Test
6
Source Current IS (A)
8
VDS = 10V
20V
4
40V
2
0
0
2 3
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Time (ns)
Capacitance (pF)
3
2
Drain Current ID (A)
10 –1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
Gate-Source Voltage VGS (V)
Tc = 25°C
Gate-Source Voltage VGS (V)
104
7
5
2
102
7
5
20
40
60
80
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
100
40
Tc = 125°C
30
75°C
20
25°C
10
0
0
0.4
0.8
1.2
1.6
Source-Drain Voltage VSD (V)
2.0
On-State Resistance vs.
Channel Temperature (Typical)
1
10
7 VGS = 10V
ID = 15A
5 Pulse
Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FS30KMJ-06F
150
4.0
3.2
2.4
1.6
0.8
0
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
Transient Thermal Impedance Zth(ch-c) (°C/W)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
1.4
–50
0
50
100
Transient Thermal Impedance Characteristics
101
7 D = 1.0
5
3 0.5
2 0.2
100 0.1
7
5
3
2
10
10
–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D = tw
T
–2
10–4 2 3 5 710–3 2 3 5 7 10–2 2 3 5 710–1 2 3 5 7100 2 3 5 7 101 2 3 5 7102
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
VDS = 10V
ID = 1mA
90%
D.U.T.
RGEN
RL
Vin
Vout
RGS
10%
10%
10%
VDD
90%
td(on)
Rev.1.00, Aug.20.2004, page 5 of 6
tr
90%
td(off)
tf
FS30KMJ-06F
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
FS30KMJ-06F
FS30KMJ-06F-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0
Similar pages