MUR30120PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR30120PT VRSM V 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 25 30 150 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 75 80 65 70 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 28 27 21 20 A2s TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque P1 Inches Min. Max. Unit TVJ=150oC Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 1200 Dim. o C 78 W 0.4...0.6 Nm 6 g W\SLFDO ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR30120PT Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 250 150 4 uA uA mA VF IF=15A; TVJ=150oC TVJ=25oC 2.2 2.6 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 46.2 rT RthJC RthCK RthJA 0.5 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC trr o _ VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C IRM FEATURES * International standard package JEDEC TO-247AD * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders 1.6 60 m K/W 50 70 ns 6.5 7.2 A ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR30120PT Ultra Fast Recovery Diodes IF 30 3.0 A µC 25 2.5 20 Qr TVJ=25°C TVJ=100°C TVJ=150°C 15 1.5 1.0 5 0.5 0 0 1 2 VF 3 V 0.0 4 Fig. 1 Forward current versus voltage drop. IRM 15 10 max. 10 -diF/dt 1.0 1.2 0.8 1.0 IRM 0.8 0.6 trr IF=11A IF=22A IF=11A IF=5.5A max. 0.6 0.4 QR 0.2 0.2 40 TJ 80 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. 0.0 100 200 -diF/dt 0 100 200 -diF/dt 300 A/µs 400 Fig. 5 Recovery time versus -diF/dt. 300 A/µs 400 Fig. 3 Peak reverse current versus -diF/dt. VFR 60 V 1200 50 1000 ns VFR 40 800 30 600 tfr 10 typ. 0 0 20 0.4 0.0 0 100 A/µs 1000 TVJ=100°C VR=540V µs typ. 5 typ. 1 max. IF=11A IF=22A IF=11A IF=5.5A 20 Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf TVJ=100°C A V =540V R 25 IF=11A IF=22A IF=11A IF=5.5A 2.0 10 30 TVJ=100°C VR= 540V 0 400 TVJ=125°C IF=11A 0 100 200 diF/dt 200 300 A/µs 400 Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. P3 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved tfr www.sirectifier.com 0