Sirectifier MUR30120PT Ultra fast recovery diode Datasheet

MUR30120PT
Ultra Fast Recovery Diodes
A
C
A
Dimensions TO-247AD
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MUR30120PT
VRSM
V
1200
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
TVJ=TVJM
TC=100oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
25
30
150
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
75
80
65
70
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
28
27
21
20
A2s
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
P1
Inches
Min.
Max.
Unit
TVJ=150oC
Weight
Millimeter
Min. Max.
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
1200
Dim.
o
C
78
W
0.4...0.6
Nm
6
g
W\SLFDO
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR30120PT
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
250
150
4
uA
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
2.2
2.6
V
VTO
For power-loss calculations only
1.65
V
TVJ=TVJM
46.2
rT
RthJC
RthCK
RthJA
0.5
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
trr
o
_
VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
IRM
FEATURES
* International standard package
JEDEC TO-247AD
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
1.6
60
m
K/W
50
70
ns
6.5
7.2
A
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR30120PT
Ultra Fast Recovery Diodes
IF
30
3.0
A
µC
25
2.5
20
Qr
TVJ=25°C
TVJ=100°C
TVJ=150°C
15
1.5
1.0
5
0.5
0
0
1
2
VF
3
V
0.0
4
Fig. 1 Forward current
versus voltage drop.
IRM
15
10
max.
10
-diF/dt
1.0
1.2
0.8
1.0
IRM
0.8
0.6
trr
IF=11A
IF=22A
IF=11A
IF=5.5A
max.
0.6
0.4
QR
0.2
0.2
40
TJ
80
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
0.0
100
200
-diF/dt
0
100
200
-diF/dt
300 A/µs 400
Fig. 5 Recovery time versus -diF/dt.
300
A/µs
400
Fig. 3 Peak reverse current versus
-diF/dt.
VFR
60
V
1200
50
1000
ns
VFR
40
800
30
600
tfr
10
typ.
0
0
20
0.4
0.0
0
100 A/µs 1000
TVJ=100°C
VR=540V
µs
typ.
5
typ.
1
max.
IF=11A
IF=22A
IF=11A
IF=5.5A
20
Fig. 2 Recovery charge versus -diF/dt.
1.4
Kf
TVJ=100°C
A V =540V
R
25
IF=11A
IF=22A
IF=11A
IF=5.5A
2.0
10
30
TVJ=100°C
VR= 540V
0
400
TVJ=125°C
IF=11A
0
100
200
diF/dt
200
300 A/µs 400
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
P3
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
tfr
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