UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free BC337L-xx-T92-B BC337G-xx-T92-B BC337L-xx-T92-K BC337G-xx-T92-K BC338L-xx-T92-B BC338G-xx-T92-B BC338L-xx-T92-K BC338G-xx-T92-K Note: Pin Assignment: C: Collector B: Base E: Emitter Package TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk MARKING BC337 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD BC338 1 of 3 QW-R201-039.E BC337/BC338 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 50 V Collector-Emitter Voltage VCES 30 V 45 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 800 mA 625 mW Collector Dissipation PC Derate Above 25°C 5 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC337 BC338 BC337 BC338 THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJc UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL BC337 Collector-Emitter Breakdown Voltage BC338 BC337 Collector-Emitter Breakdown Voltage BC338 Emitter-Base Breakdown Voltage BC337 Collector Cut-off Current BC338 Collector-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Current Gain Bandwidth Product TEST CONDITIONS BVCEO IC=10mA, IB=0 BVCES IC=0.1mA, VBE=0 BVEBO IE=0.1mA, IC=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA, f=50MHz ICES hFE1 hFE2 DC Current Gain RATINGS 200 83.3 VCE(SAT) VBE(ON) Cob fT MIN 45 25 50 30 5 TYP 2 2 100 60 MAX UNIT V V V V V 100 nA 100 nA 630 0.7 1.2 12 100 V V pF MHz CLASSIFICATION OF hFE1 RANK hFE1 16 100-250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 160-400 40 250-630 2 of 3 QW-R201-039.E BC337/BC338 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS =1 00 ℃ 300 100 TA 30 =-2 5℃ 1K =2 5℃ Common Emitter VCE=1V TA Collector Current, IC (mA) 5K Collector Power Dissipation, PC (mW) Collector Current vs. Base-Emitter Voltage TA 10 3 1 0.2 0.7 0.8 0.6 0.4 Base-Emitter Voltage, VBE (V) 0.4 0.3 0.2 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 Ambient Temperature, TA (℃) Collector Current vs. Collector-Emitter Voltage IB=10mA 0.6 0.5 1.0 Collector Power Dissipation vs. Ambient Temperature IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA 0.1 0 0 1 2 3 4 5 6 7 8 9 10 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-039.E