GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L LSIC2SD120A08 RoHS Description SiC This series of silicon carbide (SiC) Schottky diodes has reverse recovery current, high surge capability, Schottkynegligible Diode and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • P ositive temperature coefficient for safe operation and ease of paralleling • 1 75 °C maximum operating junction temperature • E xtremely fast, temperature-independent switching behavior • D ramatically reduced switching losses compared to Si bipolar diodes • Excellent surge capability Circuit Diagram TO-220-2L Applications Case Case • B oost diodes in PFC or DC/DC stages • S witch-mode power supplies 1 • Solar inverters • Industrial motor drives • EV charging stations • U ninterruptible power supplies 2 Environmental 1 2 • L ittelfuse “RoHS” logo = RoHS conform RoHS • L ittelfuse “HF” logo = Halogen Free • L ittelfuse “PB-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage Symbol Conditions Value Unit VRRM - 1200 V V DC Blocking Voltage VR Tj = 25 °C 1200 TC = 25 °C 24.5 Continuous Forward Current IF TC = 135 °C 12 TC = 154 °C 8 Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 65 Power Dissipation PTot Operating Junction Temperature A A TC = 25 °C 125 TC = 110 °C 54 TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature Tsold - 260 °C W © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 Pb GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L Electrical Characteristics Characteristics SiCConditions Schottky Diode Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Min. Typ. Max. IF = 8 A, TJ = 25 °C - 1.5 1.8 IF = 8 A, TJ = 175 °C - 2.2 - VR = 1200 V , TJ = 25 °C - <1 100 VR = 1200 V , TJ = 175 °C - 10 VR = 1 V, f =1 MHz - 454 - VR = 400 V, f = 1 MHz - 45 - VR = 800 V, f = 1 MHz - 33 - - 47 - Unit V μA pF VR Total Capacitive Charge ∫C(V)dV VR = 800 V, Qc = QC nC 0 Footnote: TJ = +25 °C unless otherwise specified Thermal Characteristics Characteristics Symbol Conditions RθJC - Thermal Resistance Figure 1: Typical Foward Characteristics Value Typ. Max. - 1.2 - Unit °C/W Figure 2: Typical Reverse Characteristics 1E-4 16 12 10 Reverse Current, IR (A) TJ = - 55 °C TJ = 25 °C TJ = 125 °C TJ = 150 °C TJ = 175 °C 14 Forward Current (A) Min. 8 6 4 1E-5 1E-6 TJ = 175 °C TJ = 150 °C 1E-7 2 0 0 0.5 1 1.5 2 2.5 Forward Voltage (V) 3 3.5 4 1E-8 TJ = 125 °C 0 200 TJ = 25 °C 400 600 800 1000 Reverse Voltage, VR (V) 1200 © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L Figure 3: Power Derating Figure 4: Current Derating SiC Schottky Diode 140 100 10 % Duty 30 % Duty 50 % Duty 70 % Duty 120 100 Forward Current (A) Maximum Power (W) 80 80 60 40 60 DC 40 20 20 0 25 50 75 100 125 150 175 0 25 Case Temperature (°C ) 50 75 100 125 150 175 Case Temperature (°C ) Figure 5: Capacitance vs. Reverse Voltage Figure 6: Capacitive Charge vs. Reverse Voltage 60 500 450 50 350 Capacive Charge (nC) Capacitance (pF) 400 300 250 200 150 100 40 30 20 10 50 0 0 1 10 Voltage (V) 100 1000 0 200 400 600 800 1000 Voltage (V) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance SiC Schottky Diode 18 1.E+00 0.5 Normalized Transient Thermal Impedance 16 Stored Energy (uJ) 14 12 10 8 6 4 2 0 0 200 400 600 800 0.3 1.E-01 0.1 0.05 0.02 0.01 1.E-02 Single 1.E-03 1.E-06 1000 Voltage (V) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Pulse Width (s) Dimensions-Package TO-220-2L $ ( ( $ ∅3 / 5 ' ' ' + 4 ( (0&SURWUXVLRQ / H H F E E $ Recommended Solder Pad Layout 2x .62 R0 1.93 5.08 UNIT: mm Symbol Millimeters Min Nom Max 4.32 4.45 4.70 A1 1.14 1.27 1.40 A2 2.20 - 2.74 b 0.69 - 0.90 b2 1.17 - 1.62 c 0.36 - 0.60 D 14.90 - 15.90 D1 8.62 - 9.40 D2 12.50 - 12.95 E 9.70 10.18 10.36 E1 7.57 7.61 8.30 e1 - 2.54 - e 5.03 5.08 5.13 A H1 6.30 6.55 6.80 L 12.88 13.50 14.00 L1 2.39 - 3.25 øP 3.50 3.84 3.96 Q 2.65 - 3.05 R - - 0.25 © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L Part Numbering and Marking System SIC2SD120A08 LF YYWWE ZZZZZZ-ZZ Packing Options SIC = SiC Diode 2 = Gen2 SD = Schottky Diode 120 = Voltage Rating (1200 V) A = TO-220 Package (2 Lead) 08 = Current Rating (8 A) YY = Year WW = Week E = Special Code ZZZZZZ-ZZ = Lot Number Part Number SiC SchottkyLSIC2SD120A08 Diode Marking Packing Mode M.O.Q SIC2SD120A08 Tube 1000 Packing Specification ( Tube for TO-220-2L ) 532 ±0.50 8 519 ±0.50 9 BLUE MARKINGS, CENTERED ON TUBE LENGTH 6.50 ±0.2 6.50 ±0.20 2.10 6 MARKING SURFACE 1 31.40 ±0.20 4 ±0.127 2 3.10 ±0.05 4 ±0.127 5 5.50 3 7 ±0.20 3.9 7 ±0.20 0.75 ±0.10 4 16.8 7 5.9 ±0.1 4 ±0.127 DETAIL B 4 ±0.127 DETAIL C NOTES: 1. Material transparent extruded PVC with antistatic dipping 2. Radius : 0.5 maximum unless otherwisen specified 3. Critical areas : Labelled in Box 4. All pin plug holes are considered critical dimension 5. Marking Font Type : Times new roman, 3.12 ±0.127 in height 6. Material Thickness : 0.75 ±0.10 7. Tolerance unless otherwise specified: Decimal: ±0.05 Angle: ±1° 8. Unit : Millimeter (mm) Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17