, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V Power And Discrete Division Description TO-220AB These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Speeds • "DSS. VDS(on). »w» Temperature * VQS(lh) apecmi IRF330 IRF730 |RF331 ' Rua9ed |RF?31 IRF332 IRF333 MTM5N35 Maximum Ratings IRF732 IRF733 MTP5N3S MTM5N4° MTPSN4° Rating IRF330/332 IRF730/732 MTM/MTP5N40 Rating IRF331/333 IRF731/733 MTM/MTP5N36 Unit VDSS Drain to Source Voltage 400 350 V VDOR Drain to Gate Voltage 400 350 V VGS Gate to Source Voltage ±20 ±20 V Tj, Tslg Operating Junction and Storage Temperature -55 to +150 -55 to +150 °c TL Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s 275 275 «c Symbol Characteristic Maximum On-State Characteristics RDS (on) Static Drain-to-Source On Resistance ID Drain Current Continuous Pulsed IRF330/331 IRF730/731 IRF332/333 IRF732/733 MTM5N35/40 MTP5N35/40 1.0 1.5 1.0 5.5 22 4.5 22 5.0 22 n A Maximum Thermal Characteristics RSJC Thermal Resistance, Junction to Case PD Total Power Dissipation at Tc = 25°C 1.67 75 1.67 75 1.67 75 °C/W W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF330-333/IRF730-733 Electrical Characteristics (Tc = 25°C unless otherwise noted) Characteristic Symbol Mln Max Unit Test Conditions OH Characteristics V(BR)DSS loss IGSS Drain Source Breakdown Voltage1 V IRF330/332/730/732 400 IRF331/333/731/733 350 Zero Gate Voltage Drain Current Gate-Body Leakage Current IRF330-333 IRF730-733 VGS - 0 V, ID - 250 MA 250 MA VDS - Rated VOSs, VGS - 0 V 1000 MA VDS - 0-8 x Rated VDSS. VGS = 0 V, TC=125°C nA VQS = ±20 v, VDS = o v ±100 ±500 On Characteristics VQS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance2 2.0 IRF330/331/730/731 Forward Transconductance V ID = 250 MA, VDS - VGS n VGS = 10 V, ID = 3.0 A s as) VDS = 10 v, ID = 3.0 A VDS - 25 V, VGS = 0 V f-1.0 MHz 1.0 1.5 IRF332/333/732/733 (to 4.0 3.0 Dynamic Characteristics Qss coss c,93 Input Capacitance 900 PF Output Capacitance 300 PF BO pF Reverse Transfer Capacitance Switching Characteristics (Tc - 25'C, Figures 12, 13) *d(on) Turn-On Delay Time 30 ns V Rise Time 35 ns tdfoff) Turn-Off Delay Time 55 ns t[ Fall Time 35 ns Qg Total Gate Charge 30 nC Symbol V DD =175 V, ID "3.0 A VGS = 10 V, RGEN = 15 fi R GS -15 fl VGS -10 v, ID = 7.0 A VDD = 180 V Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics VSD Diode Forward Voltage IRF330/331/730/731 IRF332/333/732/733 tn Reverse Recovery Time 400 1.6 V ls = 5.5 A; VGS = 0 V 1.5 V ls = 4.5 A; VQS - 0 V ns Is = 5.5 A; dls/dt = 100 A/MS MTM/MTP5N35/5N40 Electrical Characteristics (Tc •=• 25°C unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics V(BH)DSS loss 'ass Drain Source Breakdown Voltage1 MTM/MTP5N40 400 MTM/MTP5N35 350 Zero Gate Voltage Drain Current V VQS - 0 V, b - 5.0 mA mA VDS = 0.85 x Rated VDSs, VGS - o v 2.5 rtiA VDS = 0.85 x Rated VDss. VQS-O v, T c =ioo°c ±500 nA Vss = ±20 V, VDS-O V 0.25 Gate-Body Leakage Current On Characteristics Vos(tn) Gate Threshold Voltage 2.0 4.5 V ID -1.0 mA, VDS = VQS 1.5 4.0 V ID = 1.0 mA, VDS = VGS T C -100°C RDS(on) Static Drain-Source On-Resistance2 1.0 Q. VGS = 10 V, ID -2.5 A Vos(on) Drain-Source On-Voltage2 2.5 6.2 V V VQS -10 V; ID -2.5 A VGS -10 V, ID -5.0 A 5.0 V VGS -10 V, ID = 2.5 A TC = 100°C S (U) V 0 s=10 V, ID = 2.5 A PF VDS - 25 V, VQS = 0 V ( = 1.0 MHz 9ls Forward Transconductance 2.0 Dynamic Characteristics Ciss Input Capacitance GOSS Output Capacitance cres Reverse Transfer Capacitance 1200 300 PF 80 PF Switching Characteristics (Tc = 25°C, Figures 12, 13)3 td(on) Turn-On Delay Time 50 ns V Rise Time 100 ns td(o«) Turn-Off Delay Time 200 ns tf Fall Time 100 ns Qg Total Gate Charge 30 nC HotM 1. Tj-+25°C to +150'C 2. Pulse test: Pulsa width < 60 (is. Duty cycle < 1% 3. Switching time measurements performed on LEM TR-58 test equipment. VDD = 25 V, ID = 2.5 A VGS =10 V, RQEN = 50 n RGS = 50 n VGS =10 V, ID = 7.0 A VDD -180 V