LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES Pb Lead-Free Parts LVIR3833-PF DATA SHEET DOC. NO : QW0905- LVIR3833-PF-B01 REV. : A DATE : 11 - Dec. - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LVIR3833-PF Package Dimensions 5.0 5.6 7.7 8.7 1.5MAX 25.0MIN □0.5 TYP 1.0MIN 2.54TYP + Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LVIR3833-PFseries are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in water clear plastic T-1 3/4 package individually Device Selection Guide: PART NO MATERIAL LENS COLOR LVIR3833-PF GaAIAs Water Clear LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LVIR3833-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol UNIT VIR Forward Current IF 50 mA Peak Forward Current (300PPS,10 μs Pulse) IFP 1 A Power Dissipation PD 100 mW Reverse Voltage Vr 5 V Electrostatic Discharge ESD 2000 V Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +85 ℃ Electrical Optical Characteristics (Aa=25℃) SYMBOL Min. Typ. Radiant Intensity Le 24 Aperture Radiant Incidence Ee 3.43 Peak Emission Wavelength PARAMETER Max. UNIT TEST CONDITION 35 mW/sr IF=20mA 5.0 mW/cm IF=20mA λpeak 940 nm IF=20mA △λ 50 nm IF=20mA Forward Voltage VF 1.2 1.6 V IF=20mA Reverse Current IR 100 μA VR=5V Spectral Line Half Width Viewing Angle 2θ1/2 2 12 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ± 15% testing tolerance. deg LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3833-PF Page3/7 Typical Electro-Optical Characteristics Curve VIR CHIP 1000 Forward Current [mA] Fig.2 Relative Radian Intensity vs.wavelength Relative Radiant Intensity Normalize @20mA Fig.1 Forward Current vs. DC Forward Voltage 100 10 1.0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.0 0.5 0.0 4.0 800 850 1100 Fig.4 Relative Radiant Power vs. Forward Peak Current 10.0 10.0 Relative Radiant Power Normalized @ 100 mA Fig 3. Relative Radiant Power vs. Forward Peak Current 1.0 0.1 1.0 1.0 0.1 100 10 10 100 Fig.6 Relative Radiant Power vs. Temperature 1.2 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 Ambient Temperature [ ℃] 100 Relative Radiant Power @ 20mA, Normalize @ 25 ℃ Fig.5 Forward DC Voltage vs. Temperature -40 1000 IFPK [mA] IFDC [mA] Forw ard DC Voltage @ 20 mA Normalize @ 25℃ 1000 1050 Wavelength[nm] Forward Voltage[V] Relative Radiant Power Normalized @ 20mA 900 950 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 Ambient Temperature [ ℃] 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3833-PF Page 4/7 Storage time: 1.The operation of Temperatures and RH are : 5 ℃~35℃,RH<60%. 2.Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with descanting agent. Considering the tape life, we suggest our customers to use our products within a year(from production date). 3.If opened more than one week in an atmosphere 5 ℃ ~ 35℃,RH<60%, they should be treated at 60 ℃± 5 ℃fo r 15hrs. Drive Method: LED is a current operated device, and therefore, require some kind of current limiting incorporated into the driver circuit. This current limiting typically takes the form of a current limiting resistor placed in series with the LED. Consider worst case voltage variations than could occur across the current limiting resistor. The forwrd current should not be allowed to change by more than 40 % of its desired value. Circuit model A Circuit model B LED LED (A) Recommended circuit. (B) The difference of brightness between LED could be found due to the VF-IF characteristics of LED. Cleaning: Use alcohol-based cleaning solvents such as isopropyl alcohol to clean the LED. ESD(Electrostatic Discharge): Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3833-PF Page 5/7 Mounting: 1. If the leads are subjected to stress during soldering a printed circuit board, illumination failure may result immediately or later during use. For this reason, make sure that the intervals between the installation holes in the board are equal to the intervals between the leads (after forming if done) so that no stress is applied to the lead. (O) (X) (O) 2. The LED lamps are designed for high-density mounting and have a structure which can alleviate mechanical stress due to clinching . Nevertheless , take care to avoid the occurrence of residual mechanical stress due to clinching . 15° 45° Anode side(cathode side on GaAlAs chips) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3833-PF Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LVIR3833-PF Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=85 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11