ACE ACE2N7002A N-channel enhancement mode mosfet Datasheet

ACE2N7002A
N-Channel Enhancement Mode MOSFET
Description
The ACE2N7002A is the N-Channel enhancement mode field effect transistors are produced using
high cell density DMOS technology. These products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as small servo motor control, power MOSFET gate
drivers, and other switching applications.
Features

60V/0.50A , RDS(ON)= 6.0Ω@VGS=10V

60V/0.30A , RDS(ON)= 7.0Ω@VGS=5V

Super high density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current capability

TSOT-23-3 and SOT-323 package design
Applications

Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.

High saturation current capability. Direct Logic-Level Interface: TTL/CMOS

Battery Operated Systems

Solid-State Relays
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Gate –Source Voltage - Non Repetitive ( tp < 50μs)
VGSS
±40
V
ID
0.5
A
IDM
1.0
A
PD
0.35
A
Operating Junction Temperature
TJ
-55~150
W
Storage Temperature Range
TSTG
-55~150
O
Continuous Drain Current (TJ=150℃)
TA=25℃
Pulsed Drain Current(*)
Power Dissipation
Thermal Resistance-Junction to Ambient
TA=25℃
RθJA
375
O
C
C /W
(*) Pulse width limited by safe operating area
VER 1.1
1
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Packaging Type
TSOT-23-3/SOT-323
Pin Description
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
Ordering information
ACE2N7002A XX + H
Halogen - free
Pb - free
BMS: TSOT-23-3
CM: SOT-323
VER 1.1
2
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ. Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250 uA
60
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS=48V, VGS=0V
1
VDS=48V, VGS=0V, TJ=55℃
10
Drain-Source On-Resistance
RDS(ON)
Source-drain Current
ISD
0.35
A
Source-drain Current (pulsed)
ISDM (2)
1.4
A
Forward Trans Conductance
gfs(1)
VDS=10V, ID=0.5A
0.6
S
Diode Forward Voltage
VSD(1)
VGS=0V, IS=-0.12A
0.85
V
1.7
2.5
VGS=10V, ID=0.5A
2.5
6.0
VGS=5V, ID=0.3A
3.3
7.0
V
uA
uA
Ω
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
VDD=30V, VGS=5V, ID≡1A
nC
43
60
20
30
Crss
6
10
td(on)
5
20
VDS = 25 V, f = 1 MHz, VGS = 0
tr
VDD=30V, ID≡0.5A, RG=4.7Ω,
15
td(off)
VGS=4.5V
7
tf
(1)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2)
Pulse width limited by safe operating area.
20
pF
ns
8
VER 1.1
3
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.1
4
ACE2N7002A
N-Channel Enhancement Mode MOSFET
VER 1.1
5
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Typical Testing Circuit
VER 1.1
6
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Packing Information
TSOT-23-3
VER 1.1
7
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-323
VER 1.1
8
ACE2N7002A
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
9
Similar pages