AP75T10GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
15mΩ
ID
G
65A
S
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole
version (AP75T10GP) are available for low-profile applications.
G
D
TO-220(P)
S
GD
S
TO-263(S)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
65
A
ID@TC=100℃
Drain Current, VGS @ 10V
41
A
260
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
138
W
Linear Derating Factor
1.11
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
0.9
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201411055
AP75T10GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
100
-
-
V
-
0.09
-
V/℃
VGS=10V, ID=30A
-
-
15
mΩ
VGS=4.5V, ID=16A
-
-
21
mΩ
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=1mA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
gfs
Forward Transconductance
VDS=10V, ID=30A
-
52
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125oC) VDS=80V ,VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
69
110.4
nC
Qgs
Gate-Source Charge
VDS=80V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
39
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
12
-
ns
tr
Rise Time
ID=30A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
220
-
ns
tf
Fall Time
VGS=10V
-
250
-
ns
Ciss
Input Capacitance
.
V =0V
-
5690 9100
pF
Coss
Output Capacitance
VDS=25V
-
540
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
310
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
-
Ω
Min.
Typ.
GS
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=30A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=30A, VGS=0V
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
74
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75T10GS/P-HF
250
120
100
ID , Drain Current (A)
ID , Drain Current (A)
200
10V
6.0V
5.0V
4.5V
V G =3.0V
T C = 150 o C
10V
6.0 V
5.0V
4.5V
o
T C = 25 C
150
V G =3.0V
100
80
60
40
50
20
0
0
0
2
4
6
8
0
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
9
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
17
2.0
I D =16A
16
I D =30A
V G =10V
1.8
T C =25 o C
15
14
.
Normalized RDS(ON)
RDS(ON) (mΩ)
1
1.6
1.4
1.2
1.0
13
0.8
12
0.6
0.4
11
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
Normalized VGS(th)
45
IS(A)
30
T j =150 o C
T j =25 o C
1.5
1
15
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP75T10GS/P-HF
f=1.0MHz
10
10000
C iss
V DS = 50 V
V DS = 64 V
V DS = 80 V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
8
4
1000
C oss
C rss
2
0
100
0
20
40
60
80
100
120
140
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
1ms
.
10
10ms
T c =25 o C
Single Pulse
100ms
DC
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP75T10GS/P-HF
MARKING INFORMATION
TO-263
75T10GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-220
.
75T10GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5