Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 1/9 CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB1K0A20KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • ESD protected gate • Pb-free lead plating & Halogen-free package Equivalent Circuit BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 200V 0.9A 0.72A 755mΩ(typ) 785mΩ(typ) Outline SOP-8 MTB1K0A20KQ8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 S1 G1 S2 G2 Ordering Information Device MTB1KA20KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB1K0A20KQ8 Preliminary CYStek Product Specification Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=2A, VDD=50V Symbol Limits VDS VGS 200 ±20 1.4 0.89 0.9 0.72 6 2 2 2 ID IDM IAS EAS Power Dissipation for Dual Operation PD Power Dissipation for Single Operation Operating Junction and Storage Temperature Range Tj, Tstg Unit V (Note 2) (Note 2) A (Note 1) (Note 4) mJ 1.6 (Note 2) 0.9 (Note 3) W -55~+150 °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, dual Symbol RθJC Thermal Resistance, Junction-to-ambient, max , single operation RθJA Value Unit 25 62.5 °C/W 78 (Note 2) 135 (Note 3) Note : 1. Pulse width limited by maximum junction temperature 2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3. Surface mounted on minimum copper pad, pulse width≤10s. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. BVDSS VGS(th) GFS IGSS 200 1 - 3 0.755 0.785 2.5 ±10 1 25 2 3 - 8.5 1.1 2.9 12.8 - Unit Test Conditions Static *1 IDSS RDS(ON) *1 V S μA Ω VGS=0V, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=1A VGS=±16V, VDS=0V VDS =160V, VGS =0V VDS =160V, VGS =0V, Tj=70°C VGS =10V, ID=1A VGS =4.5V, ID=1A Dynamic Qg Qgs Qgd *1, 2 *1, 2 *1, 2 MTB1K0A20KQ8 nC VDS=160V, ID=1A, VGS=10V Preliminary CYStek Product Specification CYStech Electronics Corp. td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr *1 Qrr *1 - 16.4 27 101 72 277 15 8.7 24.6 40.5 152 108 415 22.5 13.1 - 0.79 32 35 0.9 6 1 - Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 3/9 ns VDS=100V, ID=2A, VGS=10V, RG=1Ω pF VGS=0V, VDS=100V, f=1MHz A V ns nC IS=1A, VGS=0V IF=1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB1K0A20KQ8 Preliminary CYStek Product Specification Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 6 ID, Drain Current(A) 4 3 BVDSS, Normalized Drain-Source Breakdown Voltage 10V 9V 8V 7V 6V 5V 4V 5 3.5V 2 VGS=3V 1 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 10 12 14 16 VDS, Drain-Source Voltage(V) 18 -75 -50 -25 20 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 10000 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V 1000 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 100 0.01 0.1 1 ID, Drain Current(A) 0 10 1 2 3 4 IDR , Reverse Drain Current(A) 5 6 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2000 2.5 1800 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=1A 1600 1400 1200 1000 800 600 400 200 VGS=10V, ID=1A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 755mΩ typ 0 0 0 MTB1K0A20KQ8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss 10 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 1 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage(V) -75 -50 -25 90 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=5V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 10 1 VDS=10V 0.1 Pulsed Ta=25°C 8 VDS=100V 6 VDS=40V 4 VDS=160V 2 ID=2A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 2 10 4 6 8 Total Gate Charge---Qg(nC) Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 1 100μs RDS(ON) Limited 1 1ms 10ms 100ms 0.1 1s 10s 0.01 TA=25°C, Tj=150°, VGS=10V RθJA=78°C/W, Single Pulse DC ID, Maximum Drain Current(A) 10 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 0.8 0.6 0.4 0.2 VGS=10V, RθJA=78°C/W 0 0.001 0.01 MTB1K0A20KQ8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 Preliminary 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation (Please see Note on page 2) 6 500 VDS=10V 450 400 4 TJ(MAX) =150°C TA=25°C RθJA=78°C/W 350 Power (W) ID, Drain Current (A) 5 3 2 300 250 200 150 1 100 50 0 0 2 4 6 VGS, Gate-Source Voltage(V) 8 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78 ° C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB1K0A20KQ8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 Preliminary 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB1K0A20KQ8 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTB1K0A20KQ8 Preliminary CYStek Product Specification Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name B1K0 A20K Date Code 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.200 5.800 6.200 1.270 (BSC) 0.300 1.270 8° 0 Inches Min. Max. 0.150 0.165 0.228 0.244 0.050 (BSC) 0.012 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB1K0A20KQ8 Preliminary CYStek Product Specification