IRF IRHMS67160 Simple drive requirement Datasheet

PD-94723E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
2N7580T1
IRHMS67160
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMS67160 100K Rads (Si)
RDS(on)
0.011Ω
ID
45A*
IRHMS63160
0.011Ω
45A*
300K Rads (Si)
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
45*
45*
180
208
1.67
±20
512
45
20.8
6.3
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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11/23/10
IRHMS67160, 2N7580T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
—
0.12
—
V/°C
—
—
0.011
Ω
∆BVDSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
2.0
—
45
—
—
Typ Max Units
—
4.0
-10.62 —
—
—
—
10
—
25
VGS = 12V, ID = 45A Ã
V
mV/°C
S
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
60
80
35
125
75
20
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
8877
1600
20.5
—
—
—
Rg
Gate Resistance
1.05
VDS = VGS, ID = 1.0mA
nC
VDS = 15V, IDS = 45A Ã
VDS= 80V, VGS = 0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 45A
VDS = 50V
ns
VDD = 50V, ID = 45A,
V GS = 12V, RG = 2.35Ω
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
nA
pF
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
nH
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
500
6.4
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 45A, VGS = 0V Ã
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS67160, 2N7580T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Diode Forward Voltage „
Min
Max
100
2.0
—
—
—
—
4.0
100
-100
10
—
—
0.011
1.2
Units
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS = 80V, VGS= 0V
Ω
V
VGS = 12V, ID = 45A
VGS = 0V, ID = 45A
nA
1. Part numbers IRHMS67160 and IRHMS63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
-19V
-20V
315 ± 5%
40 ± 5%
100
100
100
100
100
40
61 ± 5%
345 ± 5%
32 ± 7.5%
100
100
100
30
-
-
90 ± 5%
375 ± 7.5%
29 ± 7.5%
100
100
-
-
-
-
Bias VDS (V)
39 ± 5%
120
100
80
60
40
20
0
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHMS67160, 2N7580T1
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
10
5.0V
20µs PULSE WIDTH
Tj = 25°C
1
5.0V
10
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current ( Α)
T J = 150°C
100
T J = 25°C
10
VDS = 25V
15
20µs PULSE WIDTH
5
5.5
6
6.5
7
7.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
8
ID = 45A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHMS67160, 2N7580T1
40
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance (m Ω)
Pre-Irradiation
ID = 45A
35
30
25
TJ = 150°C
20
15
T J = 25°C
10
5
0
4
8
12
16
20
30
25
T J = 150°C
20
15
T J = 25°C
10
5
VGS = 12V
0
24
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
140
6.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
VGS, Gate -to -Source Voltage (V)
130
120
110
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
1.0
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHMS67160, 2N7580T1
VGS = 0V,
f = 100KHz
1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
12000
10000
Ciss
8000
Coss
6000
4000
2000
20
VGS , Gate-to-Source Voltage (V)
14000
Pre-Irradiation
ID = 45A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
40
80
120
160
200
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
80
T J = 150°C
100
ID , Drain Current (A)
ISD , Reverse Drain Current ( Α)
LIMITED BY PACKAGE
T J = 25°C
10
60
40
20
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
1.6
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHMS67160, 2N7580T1
1200
OPERATION IN THIS AREA
LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
100
100µs
10
1ms
10ms
1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
ID
20A
28.5A
BOTTOM
45A
TOP
1000
800
600
400
200
0
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
P DM
t1
SINGLE PULSE
( THERMAL RESPONSE )
t2
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHMS67160, 2N7580T1
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
- VDD
IAS
VGS
20V
A
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
12V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHMS67160, 2N7580T1
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L = 0.51 mH
Peak IL = 45A, VGS = 12V
 ISD ≤ 45A, di/dt ≤ 650A/µs,
VDD ≤ 100V, TJ ≤ 150°C
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —Low-Ohmic TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
14.48 [.570]
12.95 [.510]
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES :
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/2010
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