ESMT M24L216128DA-70TEG 2-mbit (128k x 16) pseudo static ram Datasheet

ESMT
PSRAM
M24L216128DA
2-Mbit (128K x 16)
Pseudo Static RAM
Features
‧Advanced low-power architecture
• High speed: 55 ns, 70 ns
• Wide voltage range: 2.7V to 3.6V
• Typical active current: 1 mA @ f = 1 MHz
• Low standby power
• Automatic power-down when deselected
Functional Description
The M24L216128DA is a high-performance CMOS pseudo
static RAM (PSRAM) organized as 128K words by 16 bits that
supports an asynchronous memory interface. This device
features advanced circuit design to provide ultra-low active
current. This is ideal for portable applications such as cellular
telephones. The device can be put into standby mode,
reducing power consumption dramatically when deselected
( CE1 HIGH, CE2 LOW or both BHE and BLE are HIGH).
The input/output pins(I/O0 through I/O15) are placed in a
high-impedance state when the chip is deselected ( CE1
HIGH, CE2 LOW) or OE is deasserted HIGH), or during a
write operation (Chip Enabled and Write Enable WE LOW).
Reading from the device is accomplished by asserting the
Chip Enables ( CE1 LOW and CE2 HIGH) and Output Enable
(OE) LOW while forcing the Write Enable ( WE ) HIGH. If Byte
Low Enable ( BLE ) is LOW, then data from the memory
location specified by the address pins will appear on I/O0 to
I/O7. If Byte High Enable ( BHE ) is LOW, then data from
memory will appear on I/O8 to I/O15. Seethe Truth Table for a
complete description of read and write modes.
Logic Block Diagram
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
1/14
ESMT
M24L216128DA
Pin Configuration[2, 3, 4]
48-ball VFBGA
Top View
44-pin TSOPII
Top View
A4
A3
A2
A1
A0
CE1
I/O0
I/O1
I/O2
I/O3
V CC
V SS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
Elite Semiconductor Memory Technology Inc.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BL E
I/O 1 5
I/O 1 4
I/O 1 3
I/O 1 2
V SS
V CC
I/ O1 1
I/ O1 0
I/ O9
I/ O8
CE2
A8
A9
A1 0
A11
NC
Publication Date : Jul. 2008
Revision : 1.2
2/14
ESMT
M24L216128DA
Product Portfolio Product
Power Dissipation
VCC Range (V)
Product
M24L216128DA
Speed(ns)
Min.
Typ.
Max
2.7
3.0
3.6
55
70
Operating ICC(mA)
f = 1MHz
Typ.[5]
Max.
1
5
Standby ISB2(µA)
f = fMAX
Typ.[5]
Max.
14
22
8
15
Typ. [5]
Max.
9
40
Note:
2. Ball D3, H1, G2, H6 are the address expansion pins for the 4-Mb, 8-Mb, 16-Mb, and 32-Mb densities respectively.
3. NC “no connect”—not connected internally to the die.
4. DNU (Do Not Use) pins have to be left floating or tied to VSS to ensure proper application.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ)
and TA = 25 °C .
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
3/14
ESMT
M24L216128DA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential . .................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ...............................20 mA
Static Discharge Voltage ........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient
Temperature (TA)
−25°C to +85°C
−40°C to +85°C
VCC
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
-55
Parameter
Description
Test Conditions
Min.
VCC
VOH
VOL
VIH
VIL
IIX
IOZ
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
ICC
VCC Operating
Supply Current
ISB1
Automatic CE1
Power-Down
Current
—CMOS Inputs
ISB2
Automatic CE1
Power-Down
Current
—CMOS Inputs
IOH = −0.1 mA
2.7
VCC0.4
Typ
.[5]
3.0
IOL = 0.1 mA
-70
Max.
Min.
3.6
2.7
VCC0.4
Typ.
[5]
3.0
Unit
Max.
3.6
V
0.4
0.4
CIN
COUT
f=0
VCC+
0.4V
0.4
0.8*
VCC
-0.4
VCC+0
.4V
0.4
GND ≤ VIN ≤ VCC
-1
+1
-1
+1
µA
GND ≤ VOUT ≤ VCC, Output Disabled
-1
+1
-1
+1
µA
f = fMAX = 1/tRC
f = 1 MHz
VCC = 3.6V
IOUT = 0mA
CMOS levels
CE1 ≥ VCC − 0.2V, CE2 ≤ 0.2V, VIN ≥
VCC − 0.2V, VIN ≤ 0.2V, f = fMAX
(Address and Data Only), f = 0 ( OE ,
V
V
14
22
8
15
1
5
1
5
40
250
40
250
µA
9
40
9
40
µA
mA
WE , BHE and BLE ), VCC=3.6V
CE1 ≥ VCC−0.2V, CE2 ≤ 0.2V
VIN ≥ VCC − 0.2V or VIN ≤ 0.2V,
f = 0, VCC =3.6V
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
Max.
Unit
8
8
pF
pF
Thermal Resistance[9]
Parameter
ΘJA
V
0.8*
VCC
-0.4
Capacitance[9]
Parameter
V
Description
Thermal Resistance(Junction to Ambient)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
ΘJC
Thermal Resistance (Junction to Case)
Notes:
6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
7.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after any design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
BGA
55
Unit
°C/W
17
°C/W
Publication Date : Jul. 2008
Revision : 1.2
4/14
ESMT
M24L216128DA
AC Test Loads and Waveforms
Parameters
R1
R2
RTH
VTH
3.0V VCC
22000
22000
11000
1.50
Unit
Ω
Ω
Ω
V
Switching Characteristics Over the Operating Range[10]
Parameter
Description
-55 [14]
Min.
Max.
-70
Min.
Max.
Unit
Read Cycle
tRC
tAA
tOHA
tACE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE1 LOW and CE2 HIGH to Data Valid
55
70
ns
ns
ns
ns
tDOE
OE LOW to Data Valid
25
35
ns
tLZOE
OE LOW to LOW Z[11, 12]
tHZOE
OE HIGH to High Z[11, 12]
tLZCE
CE1 LOW and CE2 HIGH to Low Z[11, 12]
tHZCE
CE1 HIGH and CE2 LOW to High Z[11, 12]
25
25
ns
tDBE
BLE / BHE LOW to Data Valid
55
70
ns
tLZBE
BLE / BHE LOW to Low Z[11, 12]
tHZBE
BLE / BHE HIGH to High Z[11, 12]
Address Skew
tSK[14]
Write Cycle[12]
tWC
tSCE
tAW
tHA
tSA
Write Cycle Time
CE1 LOW and CE2 HIGH to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
55[14]
70
55
5
70
10
5
25
2
25
ns
5
10
0
25
10
70
55
55
0
0
ns
ns
5
5
55
45
45
0
0
ns
5
ns
ns
ns
ns
ns
ns
ns
Notes:
10. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of VCC(typ)/2, input pulse levels of 0V
to VCC(typ), and output loading of the specified IOL/IOH and 30-pF load capacitance.
11. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
12. High-Z and Low-Z parameters are characterized and are not 100% tested.
13. The internal write time of the memory is defined by the overlap of WE , CE1 = VIL, CE2 = VIH, BHE and/or BLE = VIL.
All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data
input set-up and hold timing should be referenced to the edge of the signal that terminates write.
14. To achieve 55-ns performance, the read access should be Chip-enable controlled. In this case tACE is the critical parameter
and tSK is satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must
be stable within 10 ns after the start of the read cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
5/14
ESMT
M24L216128DA
Switching Characteristics Over the Operating Range (continued)[10]
Parameter
tPWE
tBW
Description
WE Pluse Width
-55
Min.
40
-70
Max.
Min.
55
Unit
Max.
ns
BLE / BHE LOW to Write End
50
55
ns
tSD
Data Set-Up to Write End
25
25
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE
WE LOW to High-Z[11, 12]
tLZWE
WE HIGH to Low-Z[11, 12]
25
5
25
5
ns
ns
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 ( OE Controlled)[14, 16]
Notes:
15. Device is continuously selected. OE , CE1 = VIL and CE2 = VIH.
16. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
6/14
ESMT
M24L216128DA
Switching Waveforms (continued)
Write Cycle 1 ( WE Controlled)[13, 14, 17, 18, 19]
Write Cycle 2 ( CE1 or CE2 Controlled)[13, 14, 17, 18, 19]
Notes:
17.Data I/O is high impedance if OE ≥ VIH.
18.If Chip Enable goes INACTIVE with WE = HIGH, the output remains in a high-impedance state.
19.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
7/14
ESMT
M24L216128DA
Switching Waveforms (continued)
Write Cycle 3 ( WE Controlled, OE LOW)[18, 19]
Write Cycle 4 ( BHE / BLE Controlled, OE LOW)[18, 19]
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
8/14
ESMT
M24L216128DA
Avoid Timing
ESMT Pseudo SRAM has a timing which is not supported at read operation, If your system has multiple invalid address signal
shorter than tRC during over 15μs at read operation shown as in Abnormal Timing, it requires a normal read timing at leat during
15μs shown as in Avoidable timing 1 or toggle CE1 to high (≧tRC) one time at least shown as in Avoidable Timing 2.
Abnormal Timing
≧15μs
CE1
WE
＜ tRC
Address
Avoidable Timing 1
≧15μs
CE1
WE
≧ tRC
Address
Avoidable Timing 2
≧15μs
CE1
≧ tRC
WE
＜ tRC
Address
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
9/14
ESMT
M24L216128DA
Truth Table[20]
CE1
H
X
X
CE2
X
L
X
WE
X
X
X
OE
X
X
X
BHE
X
X
H
L
H
H
L
L
L
L
H
H
L
H
L
L
H
H
L
L
H
L
H
H
H
L
L
L
H
H
H
H
L
H
H
H
L
H
L
X
Inputs/Outputs
High Z
High Z
High Z
Mode
Deselect/Power-Down
Deselect/Power-Down
Deselect/Power-Down
Power
Standby (ISB)
Standby (ISB)
Standby (ISB)
Data Out (I/O0–I/O15)
Read
Active (ICC)
Read
Active (ICC)
Read
Active (ICC)
High Z
Output Disabled
Active (ICC)
L
High Z
Output Disabled
Active (ICC)
L
H
High Z
Output Disabled
Active (ICC)
L
L
Data In (I/O0–I/O15)
Write (Upper Byte and Lower Byte)
Active (ICC)
Write (Lower Byte Only)
Active (ICC)
Write (Upper Byte Only)
Active (ICC)
BLE
X
X
H
L
H
L
X
H
L
L
H
L
X
L
H
Data Out (I/O0–I/O7);
(I/O8–I/O15) in High Z
Data Out (I/O8–I/O15);
(I/O0–I/O7) in High Z
Data In (I/O0–I/O7);
(I/O8–I/O15) in High Z
Data Out (I/O8–I/O15);
(I/O0–I/O7) in High Z
Ordering Information
Speed (ns)
55
70
55
70
55
70
55
70
Ordering Code
M24L216128DA-55BEG
M24L216128DA -70BEG
M24L216128DA-55TEG
M24L216128DA-70TEG
M24L216128DA-55BIG
M24L216128DA -70BIG
M24L216128DA-55TIG
M24L216128DA-70TIG
Package Type
48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free)
48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free)
44-pin TSOPII (Pb-Free)
44-pin TSOPII (Pb-Free)
48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free)
48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free)
44-pin TSOPII (Pb-Free)
44-pin TSOPII (Pb-Free)
Operating Range
Extended
Extended
Extended
Extended
Industrial
Industrial
Industrial
Industrial
Note:
20.H = Logic HIGH, L = Logic LOW, X = Don’t Care.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
10/14
ESMT
M24L216128DA
Package Diagrams
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
11/14
ESMT
44-LEAD
M24L216128DA
TSOP(II)
Symbol
PSRAM(400mil)
Dimension in mm
Min
Norm
A
Dimension in inch
Max
Min
Norm
Max
1.20
A1
0.05
A2
0.95
B
0.30
B1
0.30
C
0.047
0.15
0.002
1.05
0.037
0.45
0.012
0.40
0.012
0.12
0.21
0.005
0.008
C1
0.10
0.16
0.004
0.006
D
18.28
18.54
0.720
ZD
1.00
0.35
18.41
0.805
REF
0.006
0.039
0.042
0.018
0.014
0.016
0.725
0.730
0.0317 REF
E
11.56
11.76
11.96
0.455
0.463
0.471
E1
10.03
10.16
10.29
0.395
0.400
0.4
L
0.40
0.59
0.69
0.016
0.023
0.027
L1
0.80 REF
e
0.80 BSC
θ
0°
Elite Semiconductor Memory Technology Inc.
0.031
REF
0.0315 BSC
8°
0°
8°
Publication Date : Jul. 2008
Revision : 1.2
12/14
ESMT
M24L216128DA
Revision History
Revision
Date
1.0
2007.07.06
Original
2008.02.27
1. Add 44-pin TSOPII package
2. Add Avoid timing
3. Modify type error of function description (standby mode :
1.1
Description
CE1 LOW, CE2 HIGH => CE1 HIGH, CE2 LOW)
1.2
2008.07.04
Elite Semiconductor Memory Technology Inc.
1. Move Revision History to the last
2. Modify voltage range 2.7V~3.3V to 2.7V~3.6V
3. Add Industrial grade
Publication Date : Jul. 2008
Revision : 1.2
13/14
ESMT
M24L216128DA
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or by
any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at the
time of publication. ESMT assumes no responsibility for any error in this
document, and reserves the right to change the products or specification in
this document without notice.
The information contained herein is presented only as a guide or examples for
the application of our products. No responsibility is assumed by ESMT for any
infringement of patents, copyrights, or other intellectual property rights of third
parties which may result from its use. No license, either express , implied or
otherwise, is granted under any patents, copyrights or other intellectual
property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To
minimize risks associated with customer's application, adequate design and
operating safeguards against injury, damage, or loss from such failure, should
be provided by the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as,
but not limited to, life support devices or system, where failure or abnormal
operation may directly affect human lives or cause physical injury or property
damage. If products described here are to be used for such kinds of
application, purchaser must do its own quality assurance testing appropriate
to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
14/14